• 제목/요약/키워드: activation energies

검색결과 534건 처리시간 0.027초

소형 고속 디젤엔진의 배기 배출물에 미치는 플르즈마의 영향에 관한 실험적 연구 (An Experimental Study on Effect of Plasma for Exhaust Emissions in Small High-Speed Diesel Engine)

  • 백태실
    • Journal of Advanced Marine Engineering and Technology
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    • 제23권6호
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    • pp.755-760
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    • 1999
  • To remove nitrogen oxides(NOx) in exhaust gas of diesel engine three-way catalytic process with plasma discharger has great possibilities. Characteristics of NOx removal depends on NO conver-sion to $NO_2$ and /or $HNO_3$ due to high activation energies for NO oxidation and reduction, NOx removal efficiency by using three-way catalytic with plasma discharger indicated about 50% at 40watt power consumption condition.

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A Rheological Study of Topical Vehicles

  • Min, Shin-Hong;Rhee, Shanghi;Kim, Yong-Bae
    • Archives of Pharmacal Research
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    • 제2권2호
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    • pp.89-97
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    • 1979
  • To find out the rheological characteristics of several pharamaceutical semisolid products, experiments were carriedout over the temperature range of 20 to 30 .deg.C . From continuous shear rheograms obtained with a Ferranti-Shirley cone and plate viscometer, loop area, shear rates, ryild values, limiting viscosities and activation energies were calculated. The systems were metastable and their viscosity decreased with time. As the temperature was raised, products studied showed a decrease in viscosity and yield value.

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플라즈마를 이용한 디젤엔진 배기가스 중의 NOx 저감에 관한 실험적 연구 (An Experimental Stduy on NOx Reduction in Exhaust Gas from Diesel Engine with Plasma)

  • 조기현;황의현
    • 한국자동차공학회논문집
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    • 제7권8호
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    • pp.83-90
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    • 1999
  • To remove nitrogen oxides(NOx) in exhaust gas of diesel engine, three-way catalytic process with plasma discharger has great possbilities. Characteristics of NOx removal depends on NO conversion to $NO_2$ and/or $HNO_3$ due to high activation energies for NO oxidationand reduction. NOx removal efficiency by using three-way catalytic with plasma dischager indicated about 50% at 40 watt power consumption condition.

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원주형으로 성형된 하동고령토의 수산화나트륨 수용액 처리에 의한 결정의 변화 (On Crystallization of Hadong Kaolin Granulated Cylindrically Treated with Aqueous Sodium Hydroxide Solution)

  • 김면섭
    • 한국세라믹학회지
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    • 제15권1호
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    • pp.21-27
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    • 1978
  • Hadong Kaolin (Halloysite) was granulated cylindrically and treated with 1N aqueous sodium hydroxide solution for 6-48 hrs at 60-10$0^{\circ}C$. The crystalling structure of surface of the products was studied by X-ray powder diffraction method. The reaction rate of halloysite to sodium A zeolite showed a gradual decrease from surface to inner layer. At the surface layer, the reaction mechanism was observed as first order consecutive reaction as follows: halloysitelongrightarrowamorphous aluminosilicatelongrightarrowsodium A zeolitelongrightarrowhydroxysodalite By applying the above reaction mechanism, the rate constants and activation energies was measured.

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GN 함량에 따른 에폭시 수지계의 열분해 특성 (Effects of GN Contents on Thermal Decomposition of Epoxy Resin System)

  • 안현수;심미자;김상욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.389-392
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    • 1997
  • Glutaronitrile(GN) was introduced to diglycidyl ether of bisphenol A(DGEBA)/ 4,4'-methylene dianiline(MDA) system to improve toughness. Effects of GN contents on thermal decomposition of epoxy resin system were investigated. To study the characteristics of thermal decomposition, thermo-gravimetric analysis(TGA) and Kissinger equation were used. Thermal degradation temperatures were about 365$^{\circ}C$ regardless of GN contents. Activation energies of thermal decomposition in epoxy resin system were almost constant below 10 phr and decreased above 15 phr.

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GaAs Metal-Semiconductor Field-Effect Transistor에서 표면 결함이 소자의 전달컨덕턴스 분산 및 게이트 표면 누설 전류에 미치는 영향 (Effects of Surface States on the Transconductance Dispersion and Gate Leakage Current in GaAs Metal - Semiconductor Field-Effect Transistor)

  • 최경진;이종람
    • 대한전자공학회논문지SD
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    • 제38권10호
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    • pp.678-686
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    • 2001
  • CaAs metal semiconductor field effect transistor (MESFET) 소자의 전달컨덕턴스 분산 (transconductance dispersion) 현상과 게이트 누설 전류의 원인을 capacitance deep level transient spectroscopy (DLTS) 측정을 이용하여 해석하였다. DLTS 스펙트럼에서는 활성화 에너지가 각각 0.65×0.07 eV와 0.88 × 0.04 eV인 두개의 표면 결함과 0.84 × 0.01 eV의 활성화 에너지를 갖는 EL2를 관찰하였다. 전달컨덕턴스 분산 측정 결과, 전달컨덕턴스는 5.5 Hz ∼ 300 Hz의 주파수 영역에서 감소하였다. 전달컨덕턴스 분산을 온도의 함수로 측정한 결과, 온도가 증가할수록 전이 주파수는 증가하였고 전이 주파수의 온도 의존성으로부터 0.66 ∼ 0.02 eV의 활성화 에너지를 구할 수 있었다. 게이트 누설 전류 측정에서는 0.15 V 이하의 게이트 전압에서 순 방향과 역 방향 게이트 전압이 일치하는 오믹 전류-전압 특성을 나타내었고 게이트 누설 전류의 온도 의존성으로부터 구한 활성화 에너지는 0.63 ∼ 0.01 eV로 계산되었다. 서로 다른 방법으로 구한 활성화 에너지의 비교로부터 표면 결함 H1이 주파수에 따라서 감소하는 전달컨덕턴스 분산 및 게이트 누설 전류의 원인임을 알 수 있었다.

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Thermal Deintercalation of Ethylammonium-Aluminosilicate Intercalates with Various Layer Charges

  • Choy, Jin-Ho;Choi, Young-Joon;Han, Yang-Su
    • The Korean Journal of Ceramics
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    • 제1권1호
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    • pp.40-44
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    • 1995
  • Ethylammonium-layered aluminosilicates intercalates were prepared by ion exchange reaction between the layered silicates with different layer changes density of 0.32∼0.41 e per unit formula and ethylammonium chloride. A kinetic study on the thermal deintercalation of the ethylammonium-layered silicate intercalates was carried out by range of 350℃ to 480℃ (heating rate of 10℃/min). Based on the Ozawa's method, the activation energies of the thermal deintercalation reaction were estimated as 171.2∼133.0 kJ/mol, which increase linearly with the layer charge densities.

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Optical and Dielectric Properties of Reduced SrTiO3 Single Crystals

  • Kang, Bong-Hoon
    • 한국세라믹학회지
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    • 제48권4호
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    • pp.278-281
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    • 2011
  • The optical band gap energy for $SrTiO_3$ by reduction at high temperature was 3.15 eV. The reflectivity of reduced $SrTiO_3$ single crystals showed little variation, however, the reflectivity by the reduction condition had no effect. For the phonon mode at about 790 $cm^{-1}$, a blue-shift took place upon $N_2$ reduction and the decreased. However, a red-shift took place upon a $H_2-N_2$ reduction and the increased at the same phonon mode. With decreasing temperature the dielectric constant decreased rapidly. The thermal activation energies were 0.92-1.02 eV.

TiO$_2$첨가에 따른 ITO 세라믹스의 소결 거동 (Sintering Behaviors of ITO Ceramics with Additions of TiO$_2$)

  • 정성경;김봉철;장세홍;김정주
    • 한국세라믹학회지
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    • 제35권4호
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    • pp.347-354
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    • 1998
  • Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

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Electrical Properties of Ultrafine $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ Powders Prepared by Glycine Nitrate Process for the High Efficient Solid Oxide Fuel Cell Applications

  • Lee, Kang-Ryeol;Park, Sung
    • The Korean Journal of Ceramics
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    • 제7권1호
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    • pp.6-10
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    • 2001
  • Ultrafine $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ solid solution powders synthesized by the glycine-nitrate process, with specific surface areas of $19-23\;\textrm{m}^2$/g were sintered at $1500^{\circ}C$ for various sintering times and then their electrical characteristics were investigated using AC impedance and four-point probe measurements. The electrical resistivity of the sintered $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ bodies showed the minimum value at the sintering time of 10 hrs. The minimum total resistivity of the $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ bodies sintered at $1500^{\circ}C$ for 10 hrs seems to result from the lowest activation energy for the electrical resistivity by the combination between the activation energies for the resistivities at the grain interior and grain boundary.

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