• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.79.2-79.2
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• 2010

We present the results of simultaneous observations of SiO v=1, 2, J=1-0, $^{29}SiO$ v=0, J=1-0, and $H_2O$ $6_{16}-5_{23}$ maser lines performed with the KVN Yonsei 21 m radio telescope from 2009 Nov. to 2010 Jan (ApJ, 719, 126, 2010). We searched for these masers in 47 symbiotic stars and detected maser emission from 21 stars, giving the first time detection from 19 stars. Both SiO and $H_2O$ masers were detected from seven stars of which six stars are D-type symbiotic and one is an S-type star, WRAY 15-1470. In the SiO maser emission, the $^{28}SiO$ v=1 maser was detected from 10 stars, while the v=2 maser detected from 15 stars. In particular, the $^{28}SiO$ v=2 maser emission without the v=1 maser detection was detected from nine stars with its detection rate of 60 %, which is much higher than that of isolated Miras/red giants. The $^{29}SiO$ v=0 maser emission was also detected from two stars, H 2-38 and BF Cyg, together with the $^{28}SiO$ v=2 maser. We conclude that these different observational results between isolated Miras/red giants and symbiotic stars may be related with the presence of hot companions in a symbiotic binary system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.307-312
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• 1996

In following addition of 0.3, -0.6, 0.8, 1.0 and 5 weight percent MgSiF66H2O studies have been made of the setting and hardening characteristics of ordinary portland cement. MgSiF66H2O retarded the setting time of ordinary portland cement and extended the induction pariod of the hydration. In ordinary portland cement the setting characteristics were drastically altered especially at high MgSiF66H2O contents. Evidence was also obtained by the formation of a KSiF6 which was very fine particle. The results wee as follows. 1. Slump was slightly decreased when MgSiF66H2O added. 2. Setting time was retarded depending on the amount of retarding agent 2 to 8 hours 3. Compressive strength was almost same or some increased in comparision with opc. 4. When MgSiF66H2O was added to cement paste K2SiF6 were formed It was fine-sized distributed uniformly in cement grain and caused retardation of cement setting.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.43.1-43.1
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• 2016

With the Korean VLBI Network (KVN), both single dish and VLBI monitoring observations of H2O and SiO masers were performed toward the semi-regular variable star R Crateris. In the case of 11 VLBI monitoring observations from Jan. 5, 2014 to Jan. 7, 2016, successful superposed maps of H2O and SiO masers were obtained at 7 epochs by adopting the Source Frequency Phase Referencing (SFPR) method. These results enable us to investigate the development of outflow and asymmetric motions from SiO maser to H2O maser regions according to stellar pulsation which are closely related with a mass-loss process. Single dish monitoring observations of H2O and SiO masers were also carried out from 2009 June to 2016 Feb. Intensity variations between H2O and SiO masers were investigated according to stellar optical phases together with peak velocity variations with respect to the stellar velocity. We will compare the VLBI results among different maser transitions with those of single dish.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.63-70
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• 1995

A crack-free ceramic composite membrane with micropores has been synthesized by the pressurized sol-gel coating technique using the mixed Al2O3-SiO2 sols. The mixed sols were prepared by mixing nanoparticulate SiO2 and boehmite sols. These sols were more stable at lower pH, but very unstable when their copositions were in the range of 50~75mol% of SiO2 at the same pH. The mixed Al2O3-SiO2 membrane prepared from the mixed sol (0.2mol/$\ell$ of solid content and pH=2) containing 40mol% of SiO2 had the mean pore radius of 0.80nm and the specific surface area of 280$m^2$/g. The nitrogen permeability through the coated Al2O3-SiO2 layer was 42$\times$107mol/$m^2$.s.Pa. It was found that the thermal stability of aluminosilicate membranes, even through similar to that of SiO2 membranes, was much improved in comparison with ${\gamma}$-alumina membranes.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.487-488
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• 2008

SiOC films containing alkyl groups have a low dielectric constant because of the interaction between the C-H hydrogen bonds and the oxygen of high electro-negative atom. The Si-$CH_3$ in a void is broken by the $O_2$, therefore the strength of CH bond in Si-O-O-$CH_3$ bond increases. The Si-O-O-$CH_3$ bond is broken by nucleophilic attack due to Si atom, again. The elongation of C-H bond causes the red shift, and the compression of C-H bond causes the blue shift. Among these chemical shifts, the blue shift from $1000\;cm^{-1}$ to $1250\;cm^{-1}$ was related with the formation of pores. If the oxygen is deficient condition, the methylradicals of the electron-rich substitution group terminate easily the Si-O-Si cross-link, and the pore is originated from the cross-link breakdown due to much methyl radicals of Si-$CH_3$. The dielectric constant of the films decreases due to pore generation.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.897-904
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• 1993

CdS doped SiO2 glass coating films which are good candidates for the nonlinear optical materials were prepared by the Sol-Gel method. TEOS, C2H5OH, H2O and HCl were used as starting materials to obtain SiO2 matrix solutions. Then Cd(NO3)2.2H2O and CS(NH2)2 were dissolved into the SiO2 matrix solutions. Coating was performed several times in order to increase the thickness of coated film by the dip-coating method. Then heat treatments were carried out to control the size of CdS microcrystals doped in SiO2 glass matrix with respect to temperatures and times. CdS-doped SiO2 transparent coating films were successfully obtained. CdS crystals were changed from cubic to hexagonal type about $600^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Applied Chemistry for Engineering
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• v.7 no.4
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• pp.645-652
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• 1996

Selective catalytic oxidation of $H_2S$ to elemental sulfur using $TiO_2/SiO_2$ catalysts was investigated in this study. The reaction test with pure $TiS_2$ and $Ti(SO_4)_2$ and cyclic temperature operation revealed that $TiO_2$ had a good resistance to sulfation and sulfidation, which are known as the main cause of catalytic deactivation in sulfur recovery process. With the increase of $TiO_2$ loading amount in $TiO_2/SiO_2$ catalysts, the conversion of $H_2S$ increased and the selectivity of elemental sulfur was very slightly decreased. As the ratio of $O_2/H_2S$ increased, the selectivity to elemental sulfur was drastically decreased. In the presence of 10 vol.% water vapor to a stoichiometric mixture of $H_2S$ and $O_2$($H_2S$= 5 vol.% O=2.5 vol.% ), both activity and selectivity of 10 wt.% $TiO_2/SiO_2$ catalyst are decreased, but it still showed more than 80% of sulfur yield.