• 한국안광학회지
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• 제2권1호
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• pp.9-16
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• 1997

강유천체 $Pb_5Ge_{3-x}Ti_xO_{11}$ 단결정을 x=0.015, 0.021, 0.03의 조성에 대하여 Czochralski법으로 성장시켰으며, 성장시킨 단결정의 색상은 맑고 투명한 연한 노란색이었다. $Pb_5Ge_{3-x}Ti_xO_{11}$ 단결정의 유전완화에 관한 연구를 위한 측정은 주파수범위 100 Hz에서 10 MHz까지 온도범위 $20^{\circ}C$에서 $600^{\circ}C$까지 변화 시키면서 하였다. 측정결과 유전을 최대값이 되는 온도는 Ti 성분이 증가함으로 낮은 온도로 이동하였으며, 유전율의 최대값의 크기는 Ti 성분의 증가에 따라 감소하였다. $Pb_5Ge_{3-x}Ti_xO_{11}$ 단결정의 유전응답의 주파수 의존성은 완화시간 분포와, Debye 완화형태를 가졌으며, 유전적 거동은 캐리어가 우세한 반응의 특징을 나타내었다.

• 한국재료학회지
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• 제8권11호
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• pp.987-992
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• 1998

Ti 과 AI의 고순도 원소 박판을 이용하여 열간프레스장치에서 고온자전합성법으로 TiAI계 금속간화합물을 제조하였다. 원소 박판에서 $TiAl_3$ 금속간화합물을 제조하는 데 승온속도, 압력, 온도 등의 변수가 고온자전합성에 영향을 미치는 중요한 인자다. 특히 승온속도는 반응합성온도를 결정하는 인자로서 본 실험에서 DTA 분석을 이용하여 공정변수를 결정하였다. DTA 분석결과에 따르면, Ti와 AI의 계면에서 반응합성은 AI의 용융점 이하와 이상의 온도에서 두 번 발생함을 알 수 있다. 또한 승온속도가 증가할수록 두 반응합성온도는 증가하였다. 10층의 Ti 박판과 9층의 AI 박판을 $20^{\circ}C$/min의 승온속도로 고온자전합성시킨 후, $810^{\circ}C$와 240MPa의 압력에서 4시간 동안 열처리한 결과 $700\mu\textrm{m}$ 두께의 TiAI계 금속간화합물 판재를 제조하였으며, XRD 회절과 SEM으로 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.161-161
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• 2011

Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.

• Nuclear Engineering and Technology
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• 제51권5호
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• pp.1365-1372
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• 2019

The effects of Y and Ti on the microstructure stability and tensile properties of the reduced activation ferritic/martensitic steel have been investigated. The addition of Y and Ti affected the prior austenite grain size due to the pinning of the inclusions. Ti addition of 0.008 wt% to the steel was intended to promote the precipitation of nano-sized carbides with a high resistance to coarsening. 8Ti14Y exhibited a higher yield strength and a lower DBTT than the other alloys due to the fine grain size and additional precipitation hardening by (Ti, Ta)-rich MX. After thermal exposure at $550^{\circ}C$ for 1500 h, yield strength was dropped significantly in exposed 0Ti13Y. On the contrary, a lower reduction of YS was observed in 8Ti14Y. The $M_{23}C_6$ in 0Ti13Y and 8Ti14Y and MX in 25Ti14Y and 39Ti15Y coarsened seriously during ageing, which could be responsible for the reduction of the tensile properties of alloys.

• Tribology and Lubricants
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• 제11권5호
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• pp.78-86
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• 1995

The silicon nitride based ceramic cutting tool materials have been fabricated by gas pressure sintering (GPS) or hot pressing (HP). Their mechanical properties were measured and the effect of the fabrication variables on the properties were examined. Also, effect of adding TiN or TiC particulates on the mechanical properties of the silicon nitride ceramics were investigated. Ceramic cutting tools (ISO 120408) were made of the sintered bodies. Cutting performance test were performed on either conventional or NC lathe. The workpieces were grey cast iron, hardened alloy steel (AISI 4140, HRc>60) and Ni-based superalloy (Inconel 718). The results showed that fabrication variables, namely, sintering temperature and time, exerted a strong influence on the microstincture and mechanical properties of the sintered body, which, however, did not make much difference in wear resistance of the tools. High hardness of the tool containing TiC particulates exhibited good cutting performance. Extensive crater wear was observed on both monolithic and TiN-containing silicon nitride tools after cutting the hardened alloy steel. Inconel 718 was extremely difficult to cut by the current cutting tools.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.189-190
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1960-1961
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

• 한국환경과학회지
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• 제12권12호
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• pp.1277-1284
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• 2003

The photocatalytic oxidation of Rhodamine B (RhB) was studied using immobilized TiO$_2$ and fluidized bed reactor. Immobilized TiO$_2$ onto GF/C was employed as the photocatalyst and a 30 W germicidal lamp was used as the light source and the reactor volume was 4.8 L. The effects of parameters such as the amounts of photocatalyst, initial concentration, initial pH, air flow rate and anion additives (NO$_3$$\^$-/, SO$_4$$\^$2-/, Cl$\^$-/, CO$_3$$\^$2-/) competing for reaction. The results showed that the optimum dosage of the immobilized TiO$_2$ was 40.0 g/L. Initial removal rate of immobilized TiO$_2$ was expressed Langmuir - Hinshelwood equation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.511-516
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• 2002

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\cric}C$.

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.475-479
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• 2004

$TiO_2$ thin films were grown on Si (100) substrates by atomic layer deposition using $[Ti(OPr^i )_2(dmae)_2]$ and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron pectroscopy, X-ray diffraction, and atomic force microscopy. The results show that $TiO_2$ ALD using $[Ti(OPr^i )_2(dmae)_2]$ as a precursor is self-controlled at temperatures of 100-300$^{\circ}C$. At the growth temperatures below 300$^{\circ}C$, the surface morphology of the $TiO_2$ films is smooth and uniform. The $TiO_2$ film was grown with a preferred orientation toward the [101] direction at 400$^{\circ}C$.