• Journal of Welding and Joining
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• 제16권2호
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• pp.93-99
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• 1998

The effects of welding conditions of gas metal arc welding on the elements loss of solid wire, oxygen content and impact toughness of weld metals were studied. Deoxidizing elements loss was increased with increase of arc voltage in both short-circuit transfer mode and globular transfer mode. It is believed that increase of arc voltage results in increase of reaction time between elements in the droplet and surrounding gas at the end of wire and in the arc column. Based on the thermodynamic equilibrium model, the oxygen content of weld metal can be predicted with the content of silicon and manganese as following : [%O] = $K([%Si][%Mn])^{-0.25}$, K = -15518/T+6.01. The equilibrium temperature was dependent on shielding gas, and it was 187$0^{\circ}C$ for $CO_2$ gas and 180$0^{\circ}C$ for 20%$CO_2$-80%Ar gas. The oxygen content of weld metal which shows maximum impact toughness was varied with deoxidizing alloy system of wires, 0.041 wt% for Si-Mn type wire and 0.026 wt% for Si-Mn-Ti type wire.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.439-439
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• 2011

기존의 고온에서 제작되는 TiO2 나노 입자를 이용한 염료감응형 태양전지를 저온에서 제작하기 위해 전자 이동층으로 ZnO 나노 입자를 사용하여, 저온($200^{\circ}C$)에서 염료감응태양전지(DSSC)를 제작하였다[1,2]. 상대전극(counter electrode)으로는 RF magnetron sputtering을 사용하여 ITO/glass위에 Pt를 증착하여 태양전지의 특성을 측정하였다. $180^{\circ}C$ 이상에서 hydropolymer가 증발되는 것을 이용하여, ZnO 나노입자와 hydropolymer 혼합한 paste 제작하여 소결 후 ZnO 나노입자 사이에 다공성을 생성시켜 Dye가 잘 침투하여 ZnO 나노입자 표면에 잘 흡착 되도록 하였다[3]. 20 nm 및 60 nm 크기의 ZnO 나노 입자를 사용하여 실험 해본 결과, 20 nm에 비하여 60 nm ZnO 나노입자의 경우 IPCE 값이 약 7% 정도로 높은 전환효율 값을 보였다. 60 nm ZnO 나노입자를 전자 수송층으로 사용한 DSSC 소자에서 단위면적당 흐르는 전류(Jsc), 전압 (Voc), fill factor (ff), 그리고 효율(${\eta}$)의 최대값은 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, 로 보였다.

• 열처리공학회지
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• 제5권2호
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• pp.85-94
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• 1992

Microstructural evolution of wrought Inconel 718 superalloy with different heat treatment conditions was studied. Heat treatment was performed via conventional(CHT), modified(MHT), Merrick(MeHT) and modified Merrick (MMeHT) methods. The size of ${\gamma}^{\prime}$ and ${\gamma}^{\prime\prime}$ precipitates which are principal strengthening phases in Inconel 718 superalloy increase in order of CHT, MHT, MeHT. For the case of MMeHT, a coexistence of fine ${\gamma}^{\prime\prime}$ precipitate and very coarse particles due to exess growth of ${\gamma}^{\prime\prime}$, which is called bimodal distribution, was observed. CHT gave the finest grain size. (Ti, Nb)C carbide and needle-like ${\delta}$ phase were formed together at grain boundaries for CHT, and were formed both inside and at boundaries of grains for MHT, MeHT and MMeHT. Morphology of partially serrated grain boundaries was developed in all heat treatment conditions except CHT.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3304-3306
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• 1999

In this study, we used the sputtering method with single target to obtain the thick and uniform PZT($PbZrTiO_3$) films for micromached IR sensor application. Then, we investigated the etching characteristics and conditions which is necessary process to fabricate the IR sensor. We tested the C-axis orientation and P-E loop of the deposited PZT films with the XRD and RT66A, respectively. Also we investigated the surface of the films by the AFM and SEM analysis.

• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.577-580
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• 2015

In this paper, in order to develop the composition ceramics with the outstanding piezoelectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics substituted with $BiFeO_3$ were prepared by the conventional solid-state reaction method. The addition of small amount of $Li_2CO_3$ and $CaCO_3$ as sintering aids decreased the sintering temperature of the ceramics. The effects of $BiFeO_3$ substitution on their piezoelectric and dielectric properties were investigated. when 0.015 mol $BiFeO_3$ was substituted, the optimal physical properties of $d_{33}=590pC/N$, $E_c=8.78kV/mm$ were obtained.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.415-420
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• 2008

AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.248-249
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• 2007

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were about -3.7%/K.

• 보존과학연구
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• 통권26호
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• pp.165-188
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• 2005

From the ancient to these days, there have been used many kinds of pigment which have two types that are inorganic pigment and organic pigment. At the ancient times, natural pigment had been used but the artificially mixed pigment has been used in modern times. By the way, searching for studies has been studied recently, it would be said the ancient pigments such as Danchung, Wall painting and Mural painting are the mainthema. However, studies about the pigments used in modern pictured relics have rarely can be found. Therefore, this analysis of Ilweolokdo would be important at the point of the pigments used in pictures of royal family in modern times and the results can be briefly summarized as below; Firstly, the results of qualitative analysis of the pigments that base or all pigments of picture was detected components of Ca, Fe and As, this results meaning that picture was used filler and basic paint. Secondly, a result of the analysis on the composition elements of the pigments shows that the main components in their composition are ;White - Lead Cyanamide($2PbCO_3$.$Pb(OH)_2$) or Titanium Oxide($TiO_2$)Blue - Ultramarine($2(Na_2O$.$Al_2O_3$ .$2Si_O2$).$Na_2S_2$)Green - Emerald green($C_2H_3A_s3Cu_2O_8$)Gold - Gold(Au), Red-Red Lead($Pb_3O_4$) or Cinnabar(HgS)Black - Carbon(C)Thirdly, X-ray diffraction analysis of crystalline structure for the blue and green pigment peeling off in picture shows that the components of blue pigment is Ultramarine($2(Na_2O$.$Al_2O_3$ .$2Si_O2$).$Na_2S_2$) and green pigment is Emerald green($C_2H_3A_s3Cu_2O_8$). Especially, microcrystalline structure of the green pigment was the shape like a cross section of wood. Consequently, we knew through the analysis of qualitative and microcrystallinestructures seen on the cross section of analyzed pigments layer that the all pigments used in the Ilweoloakdo is possible to use synthetic pigments in modern.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.