• 제목/요약/키워드: a-C:Ti

검색결과 3,747건 처리시간 0.036초

Effect of CuO on the Low Temperature Sintering Properties of PSN-PNN-PZT Ceramics

  • Jeong, Yeong-Ho;Yoo, Ju-Hyun;Nam, Seung-Hyon;Lee, Su-Ho;Chung, Kwang-Hyun;Lee, Duck-Chool
    • Transactions on Electrical and Electronic Materials
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    • 제5권3호
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    • pp.109-112
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    • 2004
  • In this study, in order to develop the low temperature sintering ceramics for ultrasonic vibrator, Pb(Sb$\_$$\frac{1}{2}$/Nb$\_$$\frac{1}{2}$/) O$_3$-Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$-Pb(Zr$\_$0.48/Ti$\_$0.52/)O$_3$ ceramics were manufactured as a function of the amount of CuO addition, and their dielectric and piezoelectric characteristics were investigated. With increasing CuO addition, the grain size and density increased up to 0.3 wt% CuO addition. Taking into consideration electromechanical coupling factor(k$\_$p/) of 0.53, mechanical quality factor(Q$\_$m/) of 423, dielectric constant($\varepsilon$$\_$r/) of 1,759 and piezoelectric constant(d$\_$33/) of 362pC/N, it could be concluded that 0.5 wt% CuO added composition ceramic sintered at 920$^{\circ}C$ was suitable for ultrasonic vibrator application.

부분수산법에 의해 제조된 PZT세라믹스의 미세구조와 $Nb_2O_5$ 첨가효과 (Microstructure and $Nb_2O_5$ Additive Effect of the PZT ceramics prepared by Partial Oxalate Method)

  • 김태주;남효덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.657-661
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    • 2002
  • PZT powder was prepared by partial oxalate method using $(Zr_{0.53}Ti_{0.47})O_2$, $Pb(NO_3)_2$ and $(COOH)_2{\cdot}2H_2O$ as a precipitant. $Nb_2O_5$ additive effect on microstructure and piezoelectric properties of PZT ceramics were investigated. The coexistence of rhombohedral and tetragonal phases of PZT ceramics at the sintering temperature of $1100^{\circ}C$ was revealed from the X-ray diffraction patterns. The grain size PZT ceramics was decreased with the increase $Nb^{5+}$. and the sinterbility of PZT ceramics was decreased with the increase $Nb^{5+}$ addition. The electromechanical coupling factors $K_p$ show above 0.60 at $1100^{\circ}C$ sintering temperature by $Nb_2O_5$ addition above 0.6mol%.

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기판에 따른 BST 박막의 RF Power 의존성 (Study on RF power dependence of BST thin film by the different substrates)

  • 최명률;이태일;박인철;김홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.22-25
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    • 2002
  • In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

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프렉탈 처리에 의한 BST 박막의 특성에 관한 연구 (A Study on the Characteristics of BST Thin Films Using Fractal Process)

  • 기현철;장동환;홍경진;오수홍;김태성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.34-38
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    • 2000
  • Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

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ZnO 첨가에 따른 PMW-PNN-PZT 세라믹스의 유전 및 압전 특성 (Dielectric and Piezoelectric Properties of PMW-PNN-PZT Ceramics As a Function of ZnO Addition)

  • 라철민;류주현
    • 한국전기전자재료학회논문지
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    • 제28권3호
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    • pp.165-169
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    • 2015
  • In this paper, in order to develop the composition ceramics with the excellent dielectric properties, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$ ceramics were fabricated by the conventional solid-state method. The effects of ZnO addition on their microstructure and piezoelectric properties were systematically investigated. The rhombohedral-tetragonal phase coexistence has been found in the ceramics without ZnO content and then with further increasing ZnO content, specimens exhibited tetragonal phase. The optimized ZnO content formed liquid phase and aided the grain growth of specimens. When 0.4 wt% ZnO was added, the optimal physical properties ($d_{33}=422pC/N$, $d_{31}=161pC/N$, ${\varepsilon}_r=1,905$, $k_p=0.55$, $Q_m=160$) were obtained.

열처리 온도에 따른 $V_{1.9}W_{0.1}O_5$ 박막의 유전특성 (Electrical Properties of $V_{1.9}W_{0.1}O_5$ Thin Films with Annealing Temperature)

  • 남성필;김재식;이성갑;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.239-240
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    • 2008
  • The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $400^{\circ}C$ were 39.6, with a dielectric loss of 0.255, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $400^{\circ}C$ were about -3.15%/K.

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PNW-PMN-PZT 소결체를 이용한 압전트랜스 특성 평가 (Piezoelectrc Transformer Properties of Piezoelectrc Transformer by PNW-PMN-PZT ceramic system)

  • 류성림;우덕현;이명우;이윤기;이은희;권순용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.218-218
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    • 2008
  • 최근 미관을 위하여 소형 네온관 등이 사용되고 있다. 따라서 네온관 등 구동에 사용되는 인버터는 안정기 역할을 하면서 소형화와 경량화가 중요한 요소이다. 본 연구는 압전 특성이 우수한 PZT계 세라믹스 조성인 $(Pb_{0.94}Sr_{0.06})[(Ni_{1/2}W_{1/2})_{0.02}(Mn_{1/3}Nb_{2/3})_{0.07}(Zr_{0.51}Ti_{0.49})_{0.91}]O_3$에 특성 향상을 위해 PbO, $Fe_2O_3$, $CeO_2$, Xwt% $Nb_2O_5$ 조성별로 첨가하였으며 그에 따른 유전, 압전 특성을 조사하고 또한 Rosen type의 압전 트랜스포머를 제작하여 각 조성별 변환효율을 측정하였다. 실험방법은 일반적인 세라믹스 제조공정으로 파우더 혼합 후 24시간 ball milling하고 $850^{\circ}C$ 에서 2시간 하소 후 $1230^{\circ}C$에서 2시간 소결하였다. 또한 최종 소결 시편을 이용하여 Rosen type의 압전 트랜스포머를 제작하였다. 상 분석을 위해 XRD를 이용하여 perovskite구조를 확인하고 미세구조확인을 위해 SEM으로 관찰하였다. 압전 특성을 평가하기 위해 압전 $d_{33}$ Meter를 사용하였으며, Impedence analyzer HP 4194A를 이용하여 전기적 특성을 측정하였다.

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LTE 하향 링크 시스템에서 양자화된 동 이득 전송 기법의 개선된 코드북 인덱스 탐색 기법 (Enhanced Codebook Index Search Scheme for Quantized Equal Gain Transmission over LTE Down Link Systems)

  • 박노윤;이신;김영주
    • 대한전자공학회논문지TC
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    • 제48권1호
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    • pp.62-69
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    • 2011
  • LTE 하향링크 시스템에서 새로운 동 이득 전송 코드북 인덱스 탐색기법을 제안한다. 제안하는 탐색기법은 QEGT 코드북을 Q 개의 인덱스들로 구성된 M 개의 그룹으로 분할한 후, 선택된 최적의 그룹 내 인덱스들 중에서 최적의 인덱스를 결정하는 것으로 기존 탐색기법에 비해 인덱스 결정을 위한 전체 계산량이 감소하면서 링크레벨 성능은 유지가 되는 장점이 있다. TI사(社)의 TMS320C6713 DSP보드를 이용한 인덱스 탐색 알고리즘의 구현을 통해 송신 안테나 수가 4인 경우 최적의 피드백 인덱스 결정을 위한 전체 clock-cycle 수가 기존보다 약 25%로 감소됨을 확인한다.

임피던스법을 적용한 연료전지 성능규명 (Fuel Cell Performance by the Impedance Method)

  • 김귀열;서장수;박용필;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.157-159
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    • 2001
  • The molten carbonate fuel cell has conspicuous feature and high potential in being used as an energy converter of various fuel to electricity and heat. However, the MCFC which use strongly corrosive molten carbonate at $650^{\circ}C$ have many problem. Systematic investigation on corrosion behavior of Fe/20Cr/Ti alloys has been done in (62+38)mol% (Li+K)C03 melt at 923K by using steady state polarization and electrochemical impedance spectroscopy method. And, The research and development for the solid oxide fuel cell have been promoted rapidly and extensively in recent years, because of their high efficiency and future potential. Therefore this paper describes the manufacturing method and characteristics of anode electrode for SOFC, by the way, Ni-YSZ materials are used as anode of SOFC widely. So in this experiments, we investigated the optimum content of Ni, by the impedance characteristics, overvoltage. As a result, the performance of Ni-YSZ anode(40vol%) was better excellent than the others.

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Post annealing에 따른 PMW-PNN-PZT 세라믹스의 압전 특성 (Piezoelectric Characteristics of PMW-PNN-PZT Ceramics according to Post-Annealing Process)

  • 유경진;류주현;박창엽;이형규;강형원
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.212-213
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    • 2005
  • In this study, in order to develop low temperature sintering piezoelectric actuator, $Pb_{0.985}Bi_{0.01}(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.13}(Zr_{0.50},Ti_{0.50})_{0.84}$ (PMW-PNN-PZT) ceramic systems were fabricated using $CaCO_3-Li_2CO_3$, sintering aid through a post-annealing process. The sinterability of PMW-PNN-PZT ceranics was remarkably enhanced by liquid phase sintering of $CaCO_3$ and $Li_2CO_3$. But, it was confimed form the X-ray diffraction pattern that the secondary phase along grain boundaries, deteriorated the piezoelectric properties. The secondary phase along grain boundaries was significantly removed by annealing after sintering. The 0.2wt% $Li_2CO_3$-0.25wt% $CaCO_3$-added PMW-PNN-PZT ceramics post-annealed at 900$^{\circ}C$ for 90min exhibited the excellent electromechanical coupling factor($k_p$) of 63.3% and piezoelectric constant($d_{33}$) of 452pC/N, respectively, for multilayer piezoelectricactuatorapplication.

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