• 전자공학회논문지A
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• 제33A권3호
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• 한국응용과학기술학회지
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• 제29권3호
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• pp.495-502
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• 2012

본 연구에서는 $TiO_2$ 입자를 얻을 수 있는 침전법을 이용하여 $TiO_2$ 입자를 제조하였다. $TiO_2$ 입자 제조시 사용되는 알콜 용매의 종류와 온도 변화 등의 매개변수가 $TiO_2$ 입자의 결정 구조, 입자의 크기 및 형태에 미치는 영향을 조사하였다. $TiO_2$ 입자제조시 용매로 사용한 알콜 종류인 methyl alcohol, iso-propylalcohol, 그리고 tert-butylalcohol를 scanning electron microscope(SEM) 분석한 결과 iso-propylalcohol이 가장 좋은 결과를 가져왔다. 그리고 온도 변화를 열분석법을 사용한 결과 $200^{\circ}C$에서 $500^{\circ}C$까지는 아나타제 구조를 유지하였으나, $800^{\circ}C$에서는 루틸 구조로 전환되었다.

• 한국결정성장학회지
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• 제8권4호
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• pp.563-566
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• 1998

BaTiO3 분말은 티타늄 수산화물 용액과 비륨수산화물 용액을 혼합하여 적당한 온도와 압력하에서 합성되었다. 미분말이 얻어진 온도는 160~$185^{\circ}C$, 압력은 5~10kg/$\textrm{cm}^2$이였다. 분말의 모양과 크기는 주사전자현미경, 결정 상은 X-선 회절로 분석하였다. 분말합성온도, 반응시간 및 농도변화에 따르는 분말의 물성을 조사하였다. $BaTiO_3$ 분말의 평균입자크기는 반응온도 및 시간이 증가함에 따라 증가하였다. $170^{\circ}C$에서 8시간 반응시킨 경우의 평균입자크기는 약 30nm이고, 입도 분포는 균일하였다.

• 대한치과기공학회지
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• 제26권1호
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• pp.97-104
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• 2004

A new Ti-10Ta-10Nb alloy has designed and examined some possibility of forming more passive oxide film by oxidation treatment which is closely related to corrosion resistance and biocompatibility. Ti-6Al-4V and Ti-10Ta-10Nb alloys were prepared by consumable vacuum arc melting and homogenized at 1050$^{\circ}C$ for 24hours. Alloy specimens were oxidized at the temperature range of 400 to 750$^{\circ}C$ for 30minutes, and the oxide films on Ti alloys were analysed by optical microscope, SEM, XPS and TGA. Cytotoxicity test was performed in MTT assay treated L929 fibroblast cell culture by indirect method. It is found out that the oxide film on Ti-10Ta-10Nb alloy is denser and thinner compared to Ti-6Al-4V alloy. The weight gain during the oxidation was increased rapidly at the temperature above 650$^{\circ}C$ for Ti-6Al-4V alloy and above 700$^{\circ}C$ for Ti-10Ta-10Nb alloy respectively. It was analysed that the passive film of the Ti alloys consisted of TiO2 through X-ray photoelectron spectroscopy (XPS) analysis. It is found out by cytotoxicity test that moderate oxidation treatment lowers cell toxicity, and Ti-10Ta-10Nb alloy showed better result compared to Ti-6Al-4V alloy.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.706-710
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• 2007

Ti-containing amorphous carbon (a-C:Ti) films shows attractive mechanical properties such as low friction coefficient, good adhesion to various substrate and high wear resistance. The incorporation of titanium in a-C films is able to improve the electrical conductivity, friction coefficient and adhesion to various substrates. In this study, a-C:Ti films were depositied on Si wafer by closed-field unbalanced magnetron (CFUBM) sputtering system composed two targets of carbon and titanium. The tribological properties of a-C:Ti films were investigated with the increase of DC bias voltage from 0 V to - 200 V. The hardness and elastic modulus of films increase with the increase of DC bias voltage and the maximum hardness shows 21 GPa. Also, the coefficient of friction exhibites as low as 0.07 in the ambient. In the result, the a-C:Ti film obtained by CFUBM sputtering method improved the tribological properties with the increase of DC bias volatage.

• 한국세라믹학회지
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• 제28권9호
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• pp.721-729
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• 1991

SnO2-TiO2(Pt or Pd), as raw material for hydrocarbon gas sensors, was prepared by a coprecipitation method. The SnO2-TiO2-based thick film gas sensors were made by screen printing technique. The titanium dioxide synthesized was shown to be anatase structure from XRD peaks and was transformed to rutile structure between 700$^{\circ}C$ and 1000$^{\circ}C$. Titanium dioxide in SnO2-TiO2 thick films devices plays a very important role in the enhancement of the sensitivity to CH4 and C4H10. In the case of SnO2-TiO2(Pt) sensors, titanium dioxide that was rutile structure enhanced the sensitivity of the thick film to CH4. Platinum added to the raw powder at coprecipitation (as chloroplatinic acid VI hydrate) improved the gas sensitivity to hydrocarbon gases. Therefore, it is expected that the SnO2-TiO2(Pt) thick film sensors fabricated in this experiment could be put into practical use as LPG (primary component : C4H10 and C3H8) and LNG (primary component : CH4) sensors.

• 대한금속재료학회지
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• 제50권11호
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• pp.801-808
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• 2012

TiAlCN coatings with various C contents were synthesized by unbalanced magnetron sputtering. The characteristics, the crystalline structure, surface morphology, hardness, and friction coefficient of the coatings as a function of the C content were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), a microhardness tester, and a wear test. In addition, their corrosion behaviors in a deaerated 3.5 wt% NaCl solution at $40^{\circ}C$ were investigated by potentiodynamic polarization tests. The results indicated that the $Ti_{14.9}Al_{15.5}C_{30.7}N_{38.9}$ coating had the highest hardness, elastic modulus, and a plastic deformation resistance of 39 GPa, 359 GPa, and 0.55, respectively, and it also had the lowest friction coefficient of approximately 0.26. Comparative evaluation of the TiAlCN coatings indicated that a wide range of coating properties, especially coating hardness, could be obtained by the synthesis methods and processing variables. The microhardness of the coatings was much higher than that from previously reported coating using similar magnetron sputtering processes. It was almost as high as the microhardness measured from the TiAlCN coatings (~41 GPa) synthesized using an arc ion plating process. The potentiodynamic test showed that the corrosion resistance of the TiAlCN coatings was significantly better than the TiAlN coatings, and their corrosion current density ($i_{corr}$), corrosion potentials ($E_{corr}$) and corrosion rate decreased with an increasing C content in the coatings. The much denser microstructure of the coatings due to the increased amount of amorphous phase with increasing C contents in the coatings could result in the the improved corrosion resistance of the coatings.

• Journal of Welding and Joining
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• 제27권2호
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• pp.38-43
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• 2009

In this study, we investigated photocatalytic ability of plasma sprayed $TiO_2$ and Ag sputtering $TiO_2$(Ag-$TiO_2$) coatings. A sputtering processes were adopted to coat the surface of $TiO_2$ with Ag(99.99%). Ag was sputtered at 10mA, 450V for $1{\sim}11$ seconds. $TiO_2$ and Ag-$TiO_2$ coatings were heat-treated at 250, 300, 350, $400^{\circ}C$ for $0{\sim}240$seconds. Photoelectrical conductivity was measured by four-point probe, and photodegradation was calculated by UV-V is spectrometer. Microstructure observation of $TiO_2$ and Ag-$TiO_2$ coatings were investigated by SEM. Crystal structure of $TiO_2$ and Ag-$TiO_2$ coatings were investigated by XRD. Qualitative analyses of $TiO_2$ and Ag-$TiO_2$ coatings were conducted by EDX. When $TiO_2$ coatings were heat-treated at $350^{\circ}C$ for 30 sec, photoelectrical conductivity and photodegradation were best. And in XRD analysis result, (101)/(110) relative intensity ratio of $TiO_2$(rutile) was comparably changed with photoelectrical conductivity. When Ag-$TiO_2$ coatings were heat-treated at $350^{\circ}C$ for 30 [sec] after sputtering Ag for 7 sec, Photoelectrical conductivity and photodegradation are best. Surface of coatings in such condition has very small and uniform Ag particles.

• 대한환경공학회지
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• 제27권9호
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• pp.932-938
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• 2005

[ $400^{\circ}C$ ]에서 소성한 $TiO_2$ 나노입자의 congo red 분해속도상수가 $0.0319\;min^{-1}$로써 최적의 광촉매 활성을 나타내었다. $TiO_2$ 광촉매의 congo red 분해 속도상수는 $400^{\circ}C$ 이하의 소성온도에서는 온도에 비례하여 증가하였고 $400^{\circ}C$ 이상의 소성온도에서는 온도에 비례하여 감소하였다. $TiO_2$ 광촉매는 사용빈도가 촉매 활성에 큰 영향을 주지 않았다. 유사한 반응조건에서 $TiO_2$의 광촉매 활성은 $TiCl_4$로 합성한 촉매가 $Ti(OC_3H_7)_4$로 합성한 촉매와 비교 했을 때 8.8% 증가하는 것으로 나타났다. 또한, 다양한 조건에서 $Ti(OC_3H_7)_4$로 합성한 $TiO_2$ 광촉매의 활성을 논의하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.