The Behavior of Dopants During the Formation of T$TiSi_2$ in the Poly-Si/Single-Si Substrate with Implanted Impurities
(불순물이 주입된 Poly-Si/Single-Si 기판에서 $TiSi_2$ 형성시 Dopants의 기동)
-
- Journal of the Korean Institute of Telematics and Electronics A
- /
- v.28A no.12
- /
- pp.24-30
- /
- 1991