• Title/Summary/Keyword: a-C:Ti

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The Behavior of Dopants During the Formation of T$TiSi_2$ in the Poly-Si/Single-Si Substrate with Implanted Impurities (불순물이 주입된 Poly-Si/Single-Si 기판에서 $TiSi_2$ 형성시 Dopants의 기동)

  • 최진성;황유상;강성건;김동원;문환구;심태언;이종길;백수현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.12
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    • pp.24-30
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    • 1991
  • As a study to use Ti-silicides as interconnection material, the formation of Ti-silicides and the behavior of dopants were investigated for specimens where dopants are introduced on both single-Si substrate and poly-Si that was deposited on the single-Si. Result showed that stable C54 TiSiS12T formed above $700^{\circ}C$ and the formed TiSiS12T had bad surface roughness. And arsenics were chiefly redistributed in TiSiS12T while boron was accumulated near the interface between TiSiS11T and Si during RTA treatment.

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Dielectric Relaxation of Pb5Ge3-xTixQ11 Single Crystals (Pb5Ge3-xTixQ11 단결정의 유전완화현상)

  • Lee, Chan Ku;Kim, Douk Hoon
    • Journal of Korean Ophthalmic Optics Society
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    • v.2 no.1
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    • pp.9-16
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    • 1997
  • Ferroelectric $Pb_5Ge_{3-x}Ti_xO_{11}$(x=0, 0.015, 0.021, 0.03) single crystals were obtained from the melt by the Czochralski method. Grown crystals were pale brownish yellow and fully transparent. The dielectric relaxation of the $Pb_5Ge_{3-x}Ti_xO_{11}$ single crystals has been studied in the frequency range from 100 Hz to 10 MHz between $20^{\circ}C$ and $600^{\circ}C$. From the results of the these measurements. the temperature of the permittivity maximum was shifted to low temperature with increasing Ti content and the permittivity maximum decreased with increasing Ti content. The frequency dependent dielectric response of $Pb_5Ge_{3-x}Ti_xO_{11}$ single crystals exhibits a Debye type relaxation, with a distribution of relaxation times. Dielectric behavior is characteristic of carrier-dominated response.

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Effect of Heating Rate on Self-Propagating, High-Temperature Synthesis of $TiAl_3$ Intermetallic from Multi-Layered Elemental Foils (다층원소박판에서 $TiAl_3$의 고온자전합성에 미치는 승온속도의 영향)

  • Kim, Yeon-Uk;Kim, Byeong-Gwan;Nam, Tae-Un;Heo, Bo-Yeong;Kim, Yeong-Jik
    • Korean Journal of Materials Research
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    • v.8 no.11
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    • pp.987-992
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    • 1998
  • Titanium aluminide intermetallic compound was formed from high purity elemental Ti and A1 foils by selfpropagating, high-temperature synthesis(SHS1 in hot press. Formation of $TiAl_3$ intermetallics at the interface between Ti and Al foil was observed to be controlled by temperature, pressure and heating rate. Especially, the heating rate is the most important role to form intermetallic compound by SHS reaction. According to DTA experiment, the SHS reactions appeared at two different temperatures below and above the melting point of Al. It was also observed that both SHS reaction temperatures increased with increasing the heating rate. After the SHS reaction of alternatively layered 10 Ti and 9 A1 foils at the heating rate of $20^{\circ}C$/min, the $700\mu\textrm{m}$ thick titanium aluminide sheet was formed by heat treatment at $810^{\circ}C$ for 4hours.

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TiO2 Nanotubes Fabricated by Atomic Layer Deposition for Solar Cells

  • Jung, Mi-Hee;Kang, Man-Gu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.161-161
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    • 2011
  • Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.

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Effects of Y and Ti addition on microstructure stability and tensile properties of reduced activation ferritic/martensitic steel

  • Qiu, Guoxing;Zhan, Dongping;Li, Changsheng;Qi, Min;Jiang, Zhouhua;Zhang, Huishu
    • Nuclear Engineering and Technology
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    • v.51 no.5
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    • pp.1365-1372
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    • 2019
  • The effects of Y and Ti on the microstructure stability and tensile properties of the reduced activation ferritic/martensitic steel have been investigated. The addition of Y and Ti affected the prior austenite grain size due to the pinning of the inclusions. Ti addition of 0.008 wt% to the steel was intended to promote the precipitation of nano-sized carbides with a high resistance to coarsening. 8Ti14Y exhibited a higher yield strength and a lower DBTT than the other alloys due to the fine grain size and additional precipitation hardening by (Ti, Ta)-rich MX. After thermal exposure at $550^{\circ}C$ for 1500 h, yield strength was dropped significantly in exposed 0Ti13Y. On the contrary, a lower reduction of YS was observed in 8Ti14Y. The $M_{23}C_6$ in 0Ti13Y and 8Ti14Y and MX in 25Ti14Y and 39Ti15Y coarsened seriously during ageing, which could be responsible for the reduction of the tensile properties of alloys.

Electrical Properties of PZT/BT Mulitilayered Films (PZT/BT 박막의 전기적 특성)

  • Lee, Sang-Heon;Nam, Sung-Pil;Lee, Young-Hie;Park, Jae-Jun
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.189-190
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

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Structural Properties of PZT BT Mulitilayered Films (PZT BT 이종 박막의 구조적 특성)

  • Lee, Sang-Heon;Lim, Sung-Soo;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1960-1961
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

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A Study on Silicon Nitride Based Ceramic Cutting Tool Materials

  • Park, Dong-Soo
    • Tribology and Lubricants
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    • v.11 no.5
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    • pp.78-86
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    • 1995
  • The silicon nitride based ceramic cutting tool materials have been fabricated by gas pressure sintering (GPS) or hot pressing (HP). Their mechanical properties were measured and the effect of the fabrication variables on the properties were examined. Also, effect of adding TiN or TiC particulates on the mechanical properties of the silicon nitride ceramics were investigated. Ceramic cutting tools (ISO 120408) were made of the sintered bodies. Cutting performance test were performed on either conventional or NC lathe. The workpieces were grey cast iron, hardened alloy steel (AISI 4140, HRc>60) and Ni-based superalloy (Inconel 718). The results showed that fabrication variables, namely, sintering temperature and time, exerted a strong influence on the microstincture and mechanical properties of the sintered body, which, however, did not make much difference in wear resistance of the tools. High hardness of the tool containing TiC particulates exhibited good cutting performance. Extensive crater wear was observed on both monolithic and TiN-containing silicon nitride tools after cutting the hardened alloy steel. Inconel 718 was extremely difficult to cut by the current cutting tools.

Photocatalytic Decolorization of Rhodamine B using Immobilized TiO2 onto GF/C and Fluidized Bed Reactor (GF/C에 고정된 TiO2와 유동층 반응기를 이용한 Rhodamine B의 광촉매 탈색)

  • 박영식;안갑환
    • Journal of Environmental Science International
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    • v.12 no.12
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    • pp.1277-1284
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    • 2003
  • The photocatalytic oxidation of Rhodamine B (RhB) was studied using immobilized TiO$_2$ and fluidized bed reactor. Immobilized TiO$_2$ onto GF/C was employed as the photocatalyst and a 30 W germicidal lamp was used as the light source and the reactor volume was 4.8 L. The effects of parameters such as the amounts of photocatalyst, initial concentration, initial pH, air flow rate and anion additives (NO$_3$$\^$-/, SO$_4$$\^$2-/, Cl$\^$-/, CO$_3$$\^$2-/) competing for reaction. The results showed that the optimum dosage of the immobilized TiO$_2$ was 40.0 g/L. Initial removal rate of immobilized TiO$_2$ was expressed Langmuir - Hinshelwood equation.

Characteristics of $TiO_2-$SnO_2$ Thin Films Fabricated Using Sol-Gel Method (솔-젤법에 의해 제작된 $TiO_2-$SnO_2$ 박막의 특성)

  • You, Do-Hyun;Yuk, Jae-Ho;Lim, Kyung-Bum
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.11
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    • pp.511-516
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    • 2002
  • $TiO_2-SnO_2$ thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\cric}C$.