• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.79-79
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• 2008

We report the growth of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin films and their substrate-dependent electrical characteristics. BST thin films were deposited on alumina(non-single crystal), $Al_2O_3$(100) substrates by Nd:YAG Pulsed Laser Deposition(PLD) with a 355nm wavelength at substrate temperature of $700^{\circ}C$ and post-deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1hours. BST materials had been chosen due to high dielectric permittivity and tunability for high frequency applications, To analyze the oxygen partial pressure effects, deposited films at 1, 10, 50, 100, 150, 200, 300 mTorr. The effects of oxygen pressure on structural properties of the deposited films have been investigated by X-ray diffraction(XRD) and atomic force microscope(AFM), respectively. Then we manufactured a inter-digital capacitor(IDC) patterns twenty fingers and $10{\mu}m$ gap, $700{\mu}m$ length and electrical properties were characterized. The results provide a basis for understanding the growth mechanisms and basic structural and electrical properties of BST thin films as required for tunable microwave devices applications such as varactors and tunable filters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.227-230
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• 1990

The addition of titanium has come to produce an increase in the conductivity of ${\alpha}-Fe_2O_3$ and has been shown NTC ( negative temperature coefficient ) characteristics. Titanium enters the ${\alpha}-Fe_2O_3$ lattice substitutionally as $Ti^{4+}$,thus producing an $Fe^{2+}$ and maintaining the average charge per cation at three. Thus the $Fe^{2+}$ acts as a donor center with respect to the surrounding $Fe^{3+}$ ions. The sintering temperature, compacting pressure and sintering tire have an effect on the electrical properties. C-V and other properties have been measured on polycrystalline samples of ${\alpha}-Fe_2O_3$ containing small deviations from stoichiometry and small amounts of added Titanium. This measurment was made in the course of an investigation of the NTC mechanism in oxides whose cations have a partially filled d-level. C-V and frequency properties have been applied to the measurement of the trap barrier properties at the grain boundary. The double Schottky barrier at the grain boundary is the major cause of the NTC mechanism in NTC thermistor of ${\alpha}-Fe_2O_3$ containing N-type impurity.

• Journal of Life Science
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• v.12 no.2
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• pp.151-157
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• 2002

A trypsin inhibitor was isolated and purified from Azismatis Rhizoma which has been used as a galenic for diuretic and antiphlogistic. Purification was carried out by 0-80% saturated ammonium sulfate salting out, DEAE- cellulose ion exchange chromatogrphy, Sephadex G-150 gel filtration. The molecular weight of Alismatis Rhizoma trypsin inhibitor(ARTI) was estimated to be about 23,000 Da by gel filtration and SDS-PAGE, it must be monomer. ARTI was stable at 0~6$0^{\circ}C$, but at higher temperature its activity was decreased about 35%. When benzoyl-dl-arginine p-nitroanilide was used as a substrate of trypsin, half-maximal inhibition of ARTI was observed at 0.071 $\mu$M. ARTI inhibited the hydrolysis of trypsin non-competitively and Km value was 0.81 $\mu$M.

• Journal of Korean Society on Water Environment
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• v.25 no.4
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• pp.522-529
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• 2009

To supply safe drinking water to areas lacking in water supply and drainage system, such as rural area and military bases in proximity to Demilitarized Zone, effective method for treating organic contaminants such as MTBE is required. This study focuses on seeking optimal conditions for effective degradation of MTBE using a bath type ultrasound reactor. Effectiveness of MTBE degradation by ultrasound is dependent on the frequency, power, temperature, treatment volume, initial concentration, catalyst, etc. In this study the degradation rate of MTBE by ultrasound was proportional to power/unit volume ratio and removal is relatively more efficient for 0.1 mM than for 1 mM of MTBE solution. Efficiency of ultrasound treatment for 1 mM MTBE solution was enhanced under bath temperature of $30^{\circ}C$ compared to $4^{\circ}C$, but the temperature effect was negligible for 0.1 mM MTBE solution. Also for 0.1 mM MTBE solution, effect of catalyst such as $TiO_2$ and $Fe^0$ on treatment speed was negligible, and zeolite even increases the time taken for the degradation. Under these specific experimental conditions of this study, the most determinant factor for degradation rate of MTBE in solution was frequency and power of ultrasound. The results have shown that a continuous ultrasound reactor system can be used for small scale remediation of organically polluted groundwater, under optimal conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.25-30
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• 1997

Physical and magnetic behaviors of reduced Co-Zn-Ti-Sn substituted Ba-ferrite particles with hydrogen are different from those of reduced-pure Ba-ferrite particles. The coercivity of substituted Ba-feffite particles shows a peaking effect with the reduction temperature ranging from 250 to 520 $^{\circ}C$, while the coercivity of pure Ba-ferrite decreases monotonically. The reduction process of substituted Ba-ferrite has been found to be devided into three steps. At the first and second steps, the magneto-plumbite structure maintained. When the reduced-substituted Ba-ferrite particles are reoxidized, the coercivity is reversible at the first step but irreversible at the second step. During the third step of reduction process above 410 $^{\circ}C$. The magneto plumbite structure was collapsed with formation of $\alpha$-Fe and $BaFeO_{3-x}$ phases and consequently the coercivity distribution is broaden and the coercivity irreversible. The coercivity and saturation magnetization decreases and increases up to 130 emu/g respectively. In this study, it is found that the substituted elements prevent the magneto-plumbite structure from collapse during the reduction process and furthermore migrate from the magnetic sites of $2a+4f_{IV}$, 2b, and 12k to $4f_{VI}$ and 12k'. An increase in the coercivity before the collapse of magneto-plumbite structure is attributed to the migration of cations in hexagonal Ba-ferrite structure.