• 한국세라믹학회지
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• 제25권4호
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• pp.341-348
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• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.1-4
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• 1998

Diamond film was deposited on Mo substrate at atmospheric pressure using combustion flame apparatus with the addition of H2. At a temperature above 100$0^{\circ}C$, parts of the film were converted into graphites and these were etched by hydrogen atoms. With increasing $C_2H_2/O_2$ ratio, the nucleation density of the film increased. But the greater part of the film was formed with cauliflower-shaped amorphous carbon. These amorphous carbn were crystallized etching amorphous carbon.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.123-123
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• 1999

Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited at the temperature of 40$0^{\circ}C$ using plasma enhanced chemical vapor deposition. The a-SiC:H films were characterized by x-ray photoelectron spectroscopy (XPS) and nanoindentation method. By increasing the plasma power from 20W to 160W, the oxygen content of the a-SiC:H films were observed to decrease from 12.1% to 4.4%. On the other hand, the plasma power did not affect the ratio of carbon to silicon in our experiment where the 1, 3-disilabutane was used as the precursor. Microhardness of the films was observed to increase as the plasma power increased, while the elastic modulus was observed to gave a maximum value at the plasma power of 80W. Microhardness of the film is thought to be strongly affected by the content of adventitious oxygen in the film and it is concluded that the hardness of the film can be improved by increasing the plasma power.

• 한국진공학회지
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• 제9권4호
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• pp.382-388
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• 2000

ECR-PECVD 방법을 이용하여 ECR power, $CH_4/H2$ 가스 혼합비와 유량, 증착시간, negative DC self bias 전압 등을 변화 시켜가면서 수소가 함유된 비정질 탄소 박막을 제조하고, 증착조건에 따른 박막의 결합구조 변화를 FTIR로 분석하였다. a-C:H 박막에 대한 FTIR 스팩트럼의 흡수 peak들은 2800~3000 $\textrm{cm}^{-1}$ 영역에서 관측되었으며, 대부분 $sp^3$ 결합을 하고있고 일부 $sp^2$ 결합구조가 존재함을 알 수 있었다. $CH_4/H_2$ 가스 혼합비와 유량의 미소 변화는 a-C:H 박막의 탄소와 수소의 결합구조에 큰 영향을 미치지 않았으며, 증착 시간이 증가할수록 탄소와 수소 원자들의 결합구조가 $CH_3$ 구조로부터 $CH_2$ 나 CH 구조로 변하고 있음을 확인하였다. 또한, bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 현상도 확인할 수 있었으며, 증착조건에 따른 a-C:H 박막의 결합구조 분석을 토대로 산업에 응용할 수 있는 높은 경도와 밀착성을 갖는 박막을 ECR-PECVD 방법으로 제조할 수 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.526-529
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• 2004

The nematic liquid crysta](NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of NLC on low substrate rf bias applied a-C:H thin films was observed and the low pretilt angle of the NLC on high substrate rf bias applied a-C:H thin films was observed. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1 W rf bias condition can be achieved. It is considered that pretilt angle of the NLC may be attributed to substrate rf bias condition and IB energy time. Therefore, LC alignment is affected by topographical structure forming strong IB energy.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2909-2912
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• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• 한국재료학회지
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• 제24권11호
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• pp.632-638
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• 2014

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film with addition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless plating of near neutral pH (pH 6.5 and pH 7) at $50^{\circ}C$. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grain size of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, an amorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with < 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphous structure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface. From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at a low temperature of $50^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.674-679
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• 1996

Using the home made Kuhn type LB (Langmuir - Blodgett) film's deposition apparatus, We measured the displacement current of monolayer film on the water surface. The obtained displacement current had each different pattern by the kind of solution while varying pressure of the monolayer. Solution of 4 - octyl - 4' - (5 - carboxyl - pentamethyleneoxy ) - azobenzene (8A5H) and stearic acid (CH$_{3}$(CH$_{2}$)$_{16}$COOH) (C18) were spreaded at the air water interface respectively, and the current induced by the dynamic behavior of molecules were pressed by barrier. Displacement current of 8A5H measured small current than C18 at same condition and it was positive direction when increasing pressure but it was negative direction when decreasing pressure. Also, Two patterns of displacement current were symmetrical form and appeared repeatedly. The C18 has unsymmetrical form of displacement current and weak current when decreasing pressure (expansion). The C18 molecules have two distinct peak values of displacement current that show that the orientations of molecules were changed largely at this points. From these results, we obtained that the 8A5H has more elasticity than the C18.8.C18.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.