• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1168-1170
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• 1995

The purpose of this thesis is to fabricate the hexamethyldisiloxane thin film by plasma polymerization method, and to investigate the electric conduction characteristics of plasma polymerized thin film. Current density was measured in being changed annealing temperature(room temperature${\sim}125[^{\circ}C]$) and electric field intensity($10^5{\sim}1.2{\times}10^6$[V/cm]). The current density of thin films fabricated at discharge power of $30{\sim}90$[W] showed $1.3{\times}10^{-11}{\sim}3.1{\times}10^{-12}[A/cm^2]$ after 10 minutes of permission of electric field. The current density increased gradually with increasing of annealing temperature and electric field intensity. The electric conduction type of thin films fabricated in discharge power of 90[W] agreed with Schottky type.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.555-561
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• 2001

In this paper, the low power (1.5 W) solenoid-type magnetic thin-film transformers utilizing a $Ni_{81}Fe_{19)$ core material were designed and fabricated for 5 MHz-drive DC-DC converter application. The $20\mum$ thick copper films were used as the coils. The transformers fabricated in this work have the sizes of $3.08 mm\times25.5 mm\; and\; 6.15 mm\times12.75 mm.$ The optimum design of solenoid-type magnetic thin film transformers was performed utilizing the conventional equations, a Maxwell computer simulator (Ansoft HFSS V7.0 for PC), and parameters obtained from the magnetic properties of NiFe magnetic core materials. frequency characteristics of inductance, dc resistance (R), coupling factor (k) and gain of developed transformers were measured using HP4194A impedance and gain-phase analyzer. The fabricated transformers with the size of $6.15 mm\time12.75 mm$ exhibit the inductance of $0.83 \muH$, the dc resistance of $2.3\Omega$$\Omega$, the k of 0.91 and the gain of -1 dB at 5 MHz, which show the comparable results to those reported in the recent literatures. The measured high-frequency characteristics for the fabricated transformers agreed well with those obtained by theoretical calculations .

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.289-293
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• 2017

$Y_2Ti_2O_7$ nanoparticles (0.3 mol%) have been successfully synthesized by the co-precipitation process. The samples, adjusted to pH7 with ammonia solution as catalyst and calcined at $700{\sim}900^{\circ}C$, exhibit very fine particles with close to spherical shape and average size of 10-30 nm. It was possible to control the size of the synthesized $Y_2Ti_2O_7$ particles by manipulating the conditions. The $Y_2Ti_2O_7$ nanoparticles were coated on a glass substrate by a dipping coating process with inorganic binder. The $Y_2Ti_2O_7$ solution coated on the glass substrate had excellent adhesion of 5B; pencil hardness test results indicated an excellent hardness of 6H. The thickness of the thick film was about $30{\mu}m$. Decomposition of MB on the $Y_2Ti_2O_7$ thin film shows that the photocatalytic properties were excellent.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1546-1548
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• 1997

We investigated microhardness, friction, wear and wettability of polyimide for finding out the influence of ion implantation on surface properties. For increasing doses microhardness increased. A reduction of the friction coefficient was most cases correlated with a reduction of wear. The contact angles of water for $B^+$, $N^+$ implanted polyimide decreased from $76^{\circ}$ to zero, as the fluences increased energy of 50, 200 keV.

• Food Science and Preservation
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• v.23 no.5
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• pp.623-630
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• 2016

Inappropriate storage of fresh-cut onions may result in losses of good quality. To understand storage conditions for shelf-life and quality of fresh-cut onions, The effect of packing type and storage temperature on the quality of fresh-cut onions was evaluated. Onions stored at $0^{\circ}C$ for 2 months were peeled off after removing root and shoot parts. Each three peeled onions were packed in a polyethylene film (PE, $50{\mu}m$) or in a polyethylene/polypropylene film (PE/PP, $100{\mu}m$) with vacuum treatment (70 cmHg) and stored at different temperatures (4, and $10^{\circ}C$) for 21 days. The following analyses were examined to evaluate the quality of fresh-cut onions: microbial population, surface color, titratable acidity and pH, respiration rate, and sensory quality. Fresh-cut onions stored at $4^{\circ}C$ showed less aerobic and coliform bacterial population than those stored at $10^{\circ}C$ during observation periods. Fungal populations of fresh-cut onions packed in PE film stored at $10^{\circ}C$ increased significantly after 13 days. E. coli was not detected in all treatments during whole storage periods. Surface colors of fresh-cut onions were not affected by packing type and storage temperature, however, color difference (${\Delta}E$) of fresh-cut onions in PE/PP film stored at $10^{\circ}C$ was significantly higher than those of other treatments. Titratable acidity of fresh-cut onions was not affected by packing type and storage temperature. However, pH of fresh-cut onions packed in PE film stored at $10^{\circ}C$ increased gradually over the whole storage period. Fresh-cut onions packed in PE film showed higher $CO_2$ and less $O_2$ concentrations at $10^{\circ}C$ than those at $4^{\circ}C$. The sensory quality of fresh-cut onions was significantly affected by packing type and storage temperature after 13 days. Particularly, vacuum treatment in PE/PP film showed better sensory quality than that of PE film package at the same storage temperature. It was concluded that vacuum treatment and storage at $4^{\circ}C$ could be effective to prolong the quality of fresh-cut onions up to 21 days.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.278-280
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus and the pattern in the resist was developed with RIE and plasma polymerized apparatus. The effect of charge of pressure on growth rate and etching rate of the thin films were studied. The molecular structure of thin film was investigated by FT-IR and then was discussed in relation to its quality as a resist.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.214-215
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• 2002

High saturation magnetization (B$\_$s/) and excellent high frequency characteristics of magnetic thin films has been recognized as the most important requirement for further miniaturization and higher frequency operation in magnetic devices, such as magnetic heads and magnetic sensors. Up to now, Fe-X-N (X =Ti, Hf, and Al etc.) films with B$\_$s/ of 15 ∼ 19 kG and coercivity (H$\_$c/) of 0.5 ∼ 5.0 Oe have been successfully fabricated and proven to satisfy various requirements as a potential candidate for thin film head materials. (omitted)