• 대한기계학회논문집A
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• 제40권3호
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• pp.267-273
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• 2016

본 연구에서는 부분 안정화 지르코니아(Z)와 자기치유능력을 부여하기 위하여 SiC와 $TiO_2$를 첨가한 5종류의 복합 지르코니아(ZS, ZST1, ZST2, ZST3, ZST5)를 소결하여, 기계적 특성과 열처리에 의한 균열 치유 가능성을 평가하였다. 6종류 지르코니아 세라믹스의 비커스 경도는 큰 차이가 없으며, 부분 안정화 지르코니아에 SiC 첨가(ZS)는 급격한 굽힘강도의 저하가 나타났지만, $TiO_2$의 첨가(ZST1, ZST2, ZST3, ZST5)는 강도가 향상하였다. 이는 SiC 및 $TiO_2$의 첨가의 따른 결정화의 영향이라 판단된다. 최고 굽힘 강도를 나타내는 균열 치유 조건에서 지르코니아 단상체는 비커스 균열이 남았으나, SiC가 첨가된 4종류는 비커스 균열이 관찰되지 않아 균열이 치유되었다.

• 한국세라믹학회지
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• 제45권4호
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• pp.208-213
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• 2008

In this study, helical antenna with microwave ZST ceramics was designed using finite element method and developed. Studied parameters are relative dielectric constant of the dielectric core and the width of the conduction metal band of the antenna. As shown in the results, the center frequency of the antenna was decreased as the dielectric constant increased. Also beam width of the antenna increased as both the dielectric constant and the conduction band width increased. Based on the designed optimal shape, the manufactured antenna has the good beam width at center frequency 1.58 GHz.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.62-62
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• 1998

• The Korean Journal of Ceramics
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• 제2권3호
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• pp.162-166
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• 1996

The effects of NiO addition on the microstructure and microwave dielectric properties of ($Zr_{08}Sn_{02}$)$TiO_4$ (ZST) were investigated. With the NiO addition, a higher density of ZST ceramics than 95% of the theoretical values has been obtained in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be $NiTiO_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_r$ decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in terms of the second phase. The ZST ceramics with 0.25 wt% NiO showed ${\varepsilon}_{\gamma}$=38, Q=7000 at GHz and TC$\gamma$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by the previous investigations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.257-260
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• 2000

소결온도 및 소결시간의 변화가 ZST세라믹의 유전상수 $\varepsilon_{\tau}$, 품질계수 $Q{\cdot}f$ 및 공진주파수의 온도계수 $\tau_f$에 미치는 영향에 대하여 연구하였다. 소결온도를 $1420^{\circ}C$까지 올렸을 때 공진기 섭동방법으로 1.6GHz에서 측정한 품질계수 Q가 가장 높았으나, 소결밀도 및 유전상수는 오히려 감소하였다. 소결시간의 증가에 따른 품질계수 Q는 $1300^{\circ}C{\sim}1380^{\circ}C$ 온도 범위에서는 소폭 상승하였으며, 소결밀도 및 유전상수는 거의 일정하였다. 공진주파수의 온도계수 $\tau_f$는 소결온도 및 소결시간의 변화에는 거의 의존하지 않았다.

• 마이크로전자및패키징학회지
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• 제2권2호
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.636-639
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• 2000

Effects of sintering temperature and time on relative permittivity $\varepsilon$$\_$r/, unloaded quality factor Q$.$f and temperature coefficient of resonant frequency $\tau$$\_$f/ of dielectric resonator materials produced from commercial ZST powder were investigated in some detail. Q$.$f values, as determined from cavity perturbation method at 1.6 GHz, gradually increased with sintering temperature reaching the maximum at 1420$^{\circ}C$. However, bulk density and relative permittivity values, which increased with temperature, started to decrease above 1380$^{\circ}C$. In addition, Q$.$f values slightly increased with sintering time at the sintering temperature of 1300$^{\circ}C$∼1380$^{\circ}C$, while bulk density and relative permittivity values were approximately constant. It was also found that $\tau$$\_$f/ values were not affected by sintering temperature and time within the experimental conditions used.

• 한국세라믹학회지
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• 제32권6호
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• pp.719-725
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• 1995

ZST powders were synthesized by coprecipitation of (Zr4+, Ti4+)-hydroxide in the presence of SnO2 particles. Zn(NO3)2 was used as a sintering additive, and according to the adding sequence, sintering and dielectric properties were investigated. Sintered densities of ZST prepared by adding Zn(NO3)2 before calcination were a little higher than those added after calcination, and dielectric properties of the specimen added by Zn(NO3)2 after calcination were better (sintered at 125$0^{\circ}C$/2 h ; Q$\times$f(GHz)=49, 000, $\varepsilon$r=41) than before calcination (Q$\times$f(GHz)=42, 000, $\varepsilon$r=39.5). Through the observation of TEM, it was identified that the cause was due to the difference of the degree of Zn2+ diffusion into grains. With increasing sintering time from 2 to 8 hrs, grain size was doubled and dielectric properties were somewhat deteriorated.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.311-316
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• 2010

$Zr_{0.7}Sn_{0.3}TiO_4$ (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of $800^{\circ}C$ showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/$V^2$ and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/$^{\circ}C$ at 100 kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.59-62
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• 1996

The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.