• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.276-276
• /
• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Proceedings of the KAIS Fall Conference
• /
• 2002.05a
• /
• pp.190-193
• /
• 2002

SiO₂, ZrO₂를 사용하여 안경 렌즈의 5충 코팅을 설계하였다. 제5층의 두께를 변화시킨 후 반사율을 계산하고, RGB의 반사율을 이용하여 반사된 빛의 색상을 시각화하였다. 이 논문에서는 제5충의 두께가 두꺼워지면서 반사광의 색상이 붉은 색상에서 푸른 색상으로 이동하였다. 색상의 분석은 Photosop5.0을 이용하였다.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.24-27
• /
• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Journal of the Korean Society for Precision Engineering
• /
• v.19 no.8
• /
• pp.141-146
• /
• 2002

This paper has studied to obtain the grinding characteristics and optimal grinding conditions of ceramic materials in the grinding with diamond wheel by design of experiments. The load on wheel by varying the feed rate was related with the surface roughness due to the minute destruction phenomenon of grains for the $Si_3\;N_4\;and\;ZrO_2$. The depth of cut is related with the surface roughness because the grinding is carried out by grain shedding process due to the brittle fracture phenomenon for the $A1_2\;O_3$. The major factors affecting the surface roughness and the optimum grinding conditions were obtained with minimum experiments using design of experiments.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.141-142
• /
• 2012

Recently, surface texturing by atmospheric laser processing has been received lots of attention to improve the tribological performance of various surfaces and this laser texturing of surfaces could be considered in a large extent to improve tribological performance of PVD coated surface. Surface texturing could be performed by various manufacturing techniques such as indentation with hard materials, ion etching, abrasive jet machining, lithography, and Laser Surface Texturing (LST). Out of all these techniques, however it is generally accepted that laser surface texturing (LST) by atmospheric laser processing offers the most promising process as LST is very fast, environmentally-friendly, easy to control the shape and size of the microdimples. In this work various preliminary experimental results from the laser texturing on the PVD-coated steel substrate will be presented. Our results indicated that laser texturing definitely affect the tribological performance of the surfaces and the size as well as pattern type of laser texturing are one of the key factors. From the wear tests against an alumina counterpart ball at room temperature under oil-lubricated condition, laser surface texturing on the CrZrSiN films reduced the friction coefficients by approximately more than 5 times in the case of narrow patterned surfaces.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.7
• /
• pp.473-478
• /
• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.300.1-300.1
• /
• 2016

최근 반도체 회로의 미세화로 인해 디자인 공정이 20 nm 이하로 내려갔다. 그 결과 회로간의 간격이 줄었으며 많은 문제가 발생 한다. 첫 번째 문제는 미세하게 여러 박막 층들을 쌓기 때문에 박막 층이 그전 50 nm 공정에 비해선 쉽게 무너질 수 있다. 따라서 하나의 박막 층은 다른 여러 박막들의 하중을 잘 견뎌야 할 것이다. 결과적으로 회로의 미세화에 따라 박막의 기계적 특성이 좋아야 될 것이다. 또 다른 문제는 너무 좁은 회로의 간격으로 인해 다른 회로에 영향을 미치는 크로스토크라는 전기적 문제이다. 크로스토크가 크다는 것은 회로간의 누설 전류가 크다는 것을 의미하며 그만큼 신호 전달 능력이 감소 한다는 것을 뜻한다. 크로스토크의 문제점을 해결하기 위해 회로 사이에 절연 막을 만들어 누설전류를 막아야 한다. 이러한 문제를 바탕으로 본 연구는 Zirconium nitride (ZrN) 박막이 이러한 문제점을 해결 할 수 있는 지연구해 보았다. 박막 제작 시 변화 요인은 질소유량 과 열처리 온도 이며 질소유량 변화는 2 sccm 과 8 sccm 두 경우로 하였다. 또한 열처리는 As-deposited state, $600^{\circ}C$ 와 $800^{\circ}C$로 열처리 하였다. 박막 증착은 RF magnetron sputtering을 이용하였으며 열처리는 질소 분위기에서 furnace를 이용하였다. 기계적 특성분석 결과 질소유량이 2 sccm 인 박막의 hardness는 as-deposited stste에서 18.8 GPa이고 $600^{\circ}C$에선 18.4 GPa로 거의 비슷하고 $800^{\circ}C$ 열처리한 경우는 15.4 GPa 으로 hardness가 감소하는 것을 알 수 있었다. 질소 유량을 8 sccm 흘려주며 증착한 박막의 경우는 as-deposited state, $600^{\circ}C$, $800^{\circ}C$에서의 hardness가 각각 17.5, 16.4, 21.1 GPa 으로 감소하다가 증가하는 경향을 보였다. 또한 zrN 박막의 전기적 특성인 누설 전류 밀도도 측정하였다. 결과적으로 본 연구는 ZrN 박막의 질소 유량 변화와 열처리에 따른 기계적, 전기적 특성변화를 확인 하였다.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.991-1000
• /
• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Transactions of Materials Processing
• /
• v.8 no.3
• /
• pp.289-289
• /
• 1999

This paper describes the investment casting of TiAl alloys. The effects of mold material and mold preheating temperature for the investment casting of TiAl on metal-mold interfacial reaction were investigated by means of optical micrography, hardness profiles and an electron probe microanalyzer. The mold materials examined were colloidal silica bonded ZrO₂, ZrSiO₄, A1₂O₃and CaO stabilized ZrO₂. When compared with conventional titanium a1loy, the high aluminum concentration of TiAl alloys helps to lower their reactivity in the molten state. The A1₂O₃mold is a promising mold material for the investment casting of TiAl in terms of the thermal stability, formability and cost. Special attention need to be paid to thermal stability and mold preheating when developing the investment calling of TiAl alloys.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.813-818
• /
• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.