• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.731-737
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• 1997

TixZr1-xC(0$0^{\circ}C$, 5.1 mm/sec respectively. The relative density, three point flexural strength, and the hardness of composites, which was sintered at 190$0^{\circ}C$ for 60 min by using hot-pressing under a pressure of 30 MPa, were 99%, 525 MPa and 24 GPa respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.52-61
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• 2003

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.359-367
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• 2000

Particulate composites of Al2O3/SiC, Al2O3/ZrO2 and Al2O3/ZrO2/SiC have been fabricated to investigate their R-curve behaviors and toughening mechanisms. Al2O3 containing 30 vol% SiC particles of 3${\mu}{\textrm}{m}$ showed rising R-curve behavior owing to the strong crack bridging by SiC particles. The fracture toughness reached 9.1 MPa {{{{ SQRT {m} }} at the crack length of 1000${\mu}{\textrm}{m}$. On the other hand, ZrO2-toughened Al2O3 had a high flat R-curve since it rose steeply in the short crack region due to the well known transformation toughening. For Al2O3/ZrO2/SiC composites, the R-curve behavior was similar to that of Al2O3/SiC but with slightly higher toughness. The SiC particles in this composite decreased the amount of transformable tetragonal phase to reduce the effect of transformation toughening by 50%. It was also found that the fracture toughness of this composite with two different toughening mechanisms was markedly lower than that estimated by the simple addition of two contributions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.381-384
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• 2001

The $\beta$-SiC+ZrB$_2$ and $\beta$-SiC+TiB$_2$ceramic electroconductive composites were pressureless-sintered and annealed by adding l2wt% A1$_2$ $O_3$+Y$_2$ $O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density showed highest value of 84.92% of the theoretical density for SiC-TiB$_2$ at 190$0^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), TiB$_2$, $Al_{5}$Y$_2$ $O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 230 MPa for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 6.50 MPa . m$^{1}$2/ for SiC-ZrB$_2$ composites at 190$0^{\circ}C$. The electrical resistivity was measured by the Rauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.214.2-214.2
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• 2015

본 연구에서는 Zr을 첨가한 용액 공정 기반 ZTO:Zr 산화물 반도체 제작 및 열처리 온도에 따른 트랜지스터의 특성 변화를 분석하였다. Zn:Sn=4:7 비율로 고정하고, Zr (0~1%) 비율에 따른 도핑과 열처리 온도($350{\sim}550^{\circ}C$)를 가변하였다. 실험 결과, Zr의 비율이 증가할수록 전류와 이동도가 감소하였고, 문턱전압이 양의 방향으로 이동하는 것을 확인하였다. Zr는 SEP (Standard Electrode Potential)가 -1.45로 Zn (-0.76), Sn (-0.13) 보다 작아 금속과 산소의 결합을 증가시키며, 또한 밴드갭이 ~7 eV로 다른 금속 보다 높아 산소와 결합력이 높다. 이러한 요인은 산화물 내의 산소 원자 결함(Oxygen vacancy)을 감소시킨다. 반대로 열처리 온도가 높아질수록 탈 수산화(Dehydroxylation)로 인한 산소 원자 결함이 증가시켜, Zr 도핑 효과와 반대 경향을 보인다. 실험 결과를 통해 Zr:Zn:Sn=0.5:4:7의 비율과 $550^{\circ}C$ 열처리 조건에서 문턱전압과 이동도, 아문턱 스윙, 전류 온오프 비(Ion/Ioff)가 각각 0.68V, $0.18cm^2/Vs$, 1.06 V/dec, $1.6{\times}10.6$의 특성을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.853-857
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• 1995

ZrSiO4 powders were prepared from partially hydrolyzed solution of Si(OC2H5)4 and ZrOCl2.8H2O solution by the sol-gel method and formation rate of ZrSiO4 on the reaction parameter was investigated. In order to prepare homogeneous ZrSiO4 precursor gels, the H2O/Si(OC2H5)4 molar ratio of about 2, the pH of the ZrOCl2.8H2O solution fo about 4 and stirring time of the mixed solutions of about 2 hrs were appropriate. Formation of temperature of ZrSiO4 reduced about 15$0^{\circ}C$ by milling and formation of ZrSiO4 at 1300~135$0^{\circ}C$ showed an accelerative increase through the hedvall effect by silica.

• Bulletin of the Korean Chemical Society
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• v.7 no.6
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• pp.413-421
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• 1986

Hydrocarbon solution of $Cp_2Zr(CH_3)Cl$ react rapidly with $Na_2Fe(CO)_4$ (1/2 equiv.) to yield $[Cp_2Zr(CH_3)]_2Fe(CO)_4$ and NaCl. The more soluble metal-metal bonded complex $[Cp_2ZrC_8H_{17}]_2Fe(CO)_2$ has also been prepared through the reaction of $Cp_2Zr(C_8H_{17})BF_4$ and $Na_2Fe(CO)_4 (1/2 equiv.). The complexes were characterized by IR, $^1H$ NMR, ^{13}C$ NMR, and elemental analysis. The infrared spectrum of $[Cp_2ZrR]_2Fe(CO)_4$ shows four bands, which is indicative of a cis-structure. The $^{13}C$ NMR spectrum provides evidence for the cis-structure.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.969-974
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• 1994

After adding 8Y-ZrO2 powders to 3Y-ZrO2 powders at ratios of 0, 33, 50, 67, and 100% by weight, the mixed yttria-stabilized zirconia specimens were fabricated into thin plate using tape~casting method and then sintered at 150$0^{\circ}C$ for 4h in air. The crystalline structure, microstructure and electrical properties of the sintered zirconia thin plates were investigated by using X-ray diffractometer, scanning electron microscope and impedance analyser, respectively. At the temperatures higher than 75$0^{\circ}C$, the sintered thin plate with 33% 8Y-ZrO2 content shows higher mechanical properties and lower electrical resistivity than 8Y-ZrO2 thin plate which is generally used as an electrolyte for solid oxide fuel cells. This is due to the fact that the zirconia thin plates with low 8Y-ZrO2 content maintain the slope of low temperature region up to high temperatures, whereas at temperatures higher than 50$0^{\circ}C$ the slope decrease in the zirconia thin plates with high 8Y-ZrO2 content.

• Journal of the Korean Ceramic Society
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• v.36 no.7
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• pp.679-684
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• 1999

Specimens of SrZr0.95Ga0.05O3-$\delta$, SrZr0.95Y0.05O3-$\delta$, BaZr0.95Ga0.05O3-$\delta$ and BaZr0.95Y0.05O3-$\delta$ were fabricated by a solid-state reaction method and subsequent sintering at 150$0^{\circ}C$ to 1$600^{\circ}C$ The microstructures and electrical characteristics of the specimens were studied. Only BaZr0.95Ga0.05O3-$\delta$ showed dense microstructure and had typical impedance spectra at various temperature. Its electrical conductivity by impedance analysis was 2.7$\times$10-3$\Omega$-1.cm-1 at 90$0^{\circ}C$ in air. The BaZr0.95Ga0.05O3-$\delta$ exhibited lower grain rsistance in wet atmosphere than in dry atmosphere and the reduction of resistance is due to the proton conduction.