• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
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• pp.43-46
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• 2001

The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.228-228
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• 2005

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.553-555
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• 1987

In the standard system of low voltage-oriented ZnO varistor,a small amount of $Sb_2O_3$ was added to improve the nonlinear exponent and then to find the variation of breakdown characteristics, 0.1m/o-SiO and 0.1m/o-$TiO_2$, respectively,were added We considered relationship between the breakdown voltage of systems and the microstructure. We found that the system containing 0.1m/o-$Sb_2O_3$ showed very high nonlinear exponent. And we found that SiO enhanced breakdown voltage and $TiO_2$ lowered it.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.211-211
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• 2005

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.216-216
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• 2005

• 한국재료학회지
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• 제32권12호
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• pp.515-521
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• 2022

Various types of optical materials and devices used in special environments must satisfy durability and optical properties. In order to improve the durability of zinc sulfide multispectral (MS ZnS) substrates with transmission wavelengths from visible to infrared, Ge-Sb-Se-based chalcogenide glass was used as a sealing material to bond the MS ZnS substrates. Wetting tests of the Ge-Sb-Se-based chalcogenide glass were conducted to analyze flowability as a function of temperature, by considering the glass transition temperature (T_g) and softening temperature (T_s). In the wetting test, the viscous flow of the chalcogenide glass sample was analyzed according to the temperature. After placing the chalcogenide glass disk between MS ZnS substrates (20 × 30 mm), the sealing test was performed at a temperature of 485 ℃ for 60 min. Notably, it was found that the Ge-Sb-Se-based chalcogenide glass sealed the MS ZnS substrates well. After the MS ZnS substrates were sealed with chalcogenide glass, they showed a transmission of 55 % over 3~12 ㎛. The tensile strength of the sealed MS ZnS substrates with Ge-Sb-Se-based chalcogenide glass was analyzed by applying a maximum load of about 240 N, confirming its suitability as a sealing material in the far infrared range.

• 자원환경지질
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• 제26권2호
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• pp.117-127
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• 1993

월류(月留) 은(銀)-금(金) 열수광상(熱水鑛床)의 맥상광석(脈狀鑛石)내에는 평균 34.9g/ton, 최대 145g/ton에 이르는 상당량의 게르마늄 (Ge)이 아지로다이트 (argyrodite)의 형태로 산출된다. 본 연구에서는, 전자현미분석법(電子顯微分析法)에 의하여 아지로다이트와 수반 광물의 광물화학(鑛物化學)을 검토하였고, ICP 질량(質量) 분광분석법(分光分析法)에 의하여 13개 광석시료내에 함유된 28개 원소(元素)의 정량분석(定量分析)을 수행하였다. 아지로다이트는 탄산염(炭酸鹽) 광물(鑛物)+석영(石英)+자연은(自然銀)+휘은석(煇銀石)+함은(含銀) 유염(硫鹽) 광물의조합으로 구성되는 후기 광물군(鑛物群)내에 산출되며, 이는 게르마늄의 침전(沈澱)작용이 초기 금(金) 및 후기의 은(銀) 침전(沈澱)으로 구성된 복잡한 광화작용(鑛化作用)중 후반부에서 진행되었음을 지시한다. 아지로다이트의 평균(平均) 화학조성(化學造成)은 $Ag_{7.90}(Ge_{0.76}Sn_{0.04})S_6$이며, 미량의 Cu, Fe, Sb, As, Sn 및 Zn이 함유되고, 특히 Cu에 의한 Ag, Sb에 의한 Ge의 체계적인 치환(置換)현상이 인지된다. 광석(鑛石)시료에 대한 정량분석결과, 금속원소의 침전작용(沈澱作用)은 $Fe{\rightarrow}Pb$, $Zn{\rightarrow}Cu{\rightarrow}Ag$, Sb, As, Ge의 순서로 진행되었고, 특히 Ge은 As 및 Sb와 강한 지화학적(地化學的) 친화도(親和度)를 가졌음을 규명하였다. Ge은 Cu, Pb, Zn, Mo 및 Sr과도 미약한 정(正)의 수반관계를 나타낸다. 월류(月留) 천열수계(淺熱水系)내 순환천수(循環天水)의 유입량(流入量) 증가에 기인한 냉각작용(冷却作用)에 수반하여, Ge은 주로 $175^{\circ}{\sim}210^{\circ}C$의 온도 범위에서 침전(沈澱)하였다.

• 대한환경공학회지
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• 제30권2호
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• pp.213-217
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• 2008

본 연구는 지정폐기물에 함유된 미규제 중금속 Ni, Zn, Ba, Be, Sb, Se, V의 용출 특성을 조사한 것으로, 이들 항목의 배출 가능성이 높은 표본사업장을 선정하여 시료 108건을 채취 분석하였다. 중금속류의 용출시험은 선행연구과제에서 제시한 시험방법으로 분석하였다. 조사결과, Ni은 폐수처리오니, 분진에서 많이 검출되었으며, Zn은 대부분의 조사대상 시료에서 검출되었다. 석유 정제 공정에서 발생된 분진과 폐촉매에서는 V이 높은 농도로 검출되었다. Ba, Be, Sb, Se은 낮은 농도로 검출되었으나, 다양한 폐기물배출사업장에서 발생되는 폐기물을 추가 선정하여 용출특성을 파악하는 것이 필요하다고 판단되었다.