• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.216-217
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• 2008

Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.75-76
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• 2007

ZnS:Cu,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$-doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cu,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.426-426
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• 2011

최근 들어 금속물질을 나노미터 단위로 구성할 수 있는 기술이 진보하면서, 금속 나노입자에 의해 발생되는 표면 플라즈몬에 대해서도 다양한 분야의 관심이 집중되고 있다. 유전체 물질을 기지상으로 하는 금속:유전체 나노복합체에서 금속 나노입자는 자유전자들의 집단 진동인 국소표면 플라즈몬 공진(Localized Surface Plasmon Resonance, LSPR)현상에 의해 국부전기장을 증대 시키고, 가시광 및 적외선 영역에서 특성 광흡수 거동을 보인다. 이와 같은 광학적 특성은 금속 나노입자들의 크기, 형태, 그리고 나노입자들의 주변을 구성하는 기지상 물질의 종류에 의해 조절된다. 금속:유전체 나노복합체에 나타나는 이러한 특성은 단순장식코팅 뿐만 아니라 광의 효율적 운용과 광을 매개로 한 기능발현을 필요로 하는 디스플레이, 광학 스위칭 소재 및 태양전지의 효율 향상을 위한 광흡수층 등 매우 다양한 응용이 가능하다. 본 연구에서는 다양한 굴절률을 갖는 재료들 중, 저굴절률을 갖는 SiO2와 고굴절률을 갖는 ZnS-SiO2를 기지상 재료로 선택하여 교번증착 스퍼터링법으로 Ag와 Au입자를 형성시켰다. Ag를 금속나노입자로 갖고, SiO2와 ZnS-SiO2를 기지상으로 하는 금속:유전체 나노복합체에서는 금속나노입자 형성에 따른 뚜렷한 표면 플라즈몬 공진 광흡수 피크가 관찰된 반면 Au나노입자는 기지상에 따라 각기 다른 광흡수 특성을 나타냈는데, SiO2기지상에서 명확한 광흡수 피크를 형성했던 경우와는 달리 ZnS-SiO2기지상에서는 특정파장에서의 흡수피크로 규정되기 어려운 넓은 파장범위에 걸친 완만한 광흡수 피크를 나타냈다. TEM 분석을 통해, ZnS-SiO2 기지상 내의 Au입자는 각각 독립되어 있는 Island형태가 아닌 유전체 기지상과 대칭적으로 혼합된 네트워크 형태의 Bruggeman 기하구조를 구성하고 있음을 확인하였고, 이는 Au입자가 형성되고 성장할 때 Au와 S의 높은 결합에너지로 인해 상당한 젖음 특성을 갖고 성장하였기 때문으로 판단됐다. 따라서 나노복합체를 구성하는 물질간의 광학적 특성뿐만 아니라 기지상 내에서의 금속입자의 성장거동에 대한 연구가 수반되었을 때, 금속:유전체 나노복합체의 표면 플라즈몬 공진 광흡수 특성을 보다 정확하게 제어할 수 있다.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3213-3217
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• 2012

Reactive adsorption desulfurization (RADS) experiments were conducted over a series of commercial metal oxide supports ($Al_2O_{3-}$, $SiO_{2-}$, $TiO_{2-}$ and $ZrO_{2-}$) supported Ni/ZnO adsorbents. The adsorbents were characterized by X-ray diffraction (XRD), temperature programmed reduction (TPR), and Fourier transform infrared spectroscopy (FTIR) in order to find out the influence of specific types of surface chemistry and structural characteristics on the sulfur adsorptive capacity. The desulfurization performance of all the studied adsorbents decreased in the following order: Ni/ZnO-$TiO_2$ > Ni/ZnO-$ZrO_2$ > Ni/ZnO-$SiO_2$ > Ni/ZnO-$Al_2O_3$. Ni/ZnO-$TiO_2$ shows the best performance and the three hour sulfur capacity can achieve 12.34 mg S/g adsorbent with a WHSV of $4h^{-1}$. Various characterization techniques suggest that weak interaction between active component and support component, high dispersion of NiO and ZnO, high reducibility and large total Lewis acidity of the adsorbents are important factors in achieving better RADS performance.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.4
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1026-1034
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• 1995

It is well known that the addition of CaO-SiO$_2$to Mn-Zn ferrites forms an insulating grain bounary layer with high electrical resistivity. This study investigated the effect of Nb$_2$O$_{5}$ on the electromagnetic properties of high frequency low loss Mn-Zn ferrites. The addition of 300ppm Nb$_2$O$_{5}$ developed an exaggerated grain growth while the addition of CaO-SiO$_2$addition with 200ppm Nb$_2$O$_{5}$ more effectively increased the density than that without Nb$_2$O$_{5}$. The addition of Nb$_2$O$_{5}$ showed the lower power loss below 100 ppm SiO$_2$and the Nb$_2$O$_{5}$-CaO addition lowered the power loss at higher sintering temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.296-301
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• 2009

An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.