• Journal of Conservation Science
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• v.28 no.3
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• pp.277-283
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• 2012

This study conducted analysis of paint samples from a streetcar No. 381 (Registration Cultural Property No. 467) to identify the characteristics of the modern paint. The samples were analyzed by Microscopic observation, infrared spectroscopy and SEM-EDS. The upper part is consist of 26 layers and the under part is 29 layers. And the layers were painted various thickness from $10{\mu}m$ to $100{\mu}m$, and confirmed that several color had been used. The putty was used for surface treatment before painting. According to the results of infrared spectroscopy, paint specimens were identified as alkyd resin. Some bands such as C-H and C=O stretcing, aromatic, C-H bending, C-O stretching were found in spectra. Inorganic analysis showed that gold color on the surface was used copper-based paint. And type of the putty was lacquer-putty that was consist of kaolin, talc and zinc white.

• Journal of the Korean Institute of Gas
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• v.5 no.2 s.14
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• pp.14-21
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• 2001

In order to investigate the damage mechanism of the coupler transferring LPG, microstructural observation and chemical analysis of the couplers operated for the long time in the LPG stations and virgin 6/4 forged-brass corrosion-tested were conducted. Their microstructure was consisted of two phases that bright $\beta$ precipitates were irregularly dispersed in $\alpha$ matrix. The chemical compositions of oxide layer on the surface of the used coupler were composed of S, C, O, Al, Si, etc. as well as Cu and Zn. In environmental corrosion tests of both $10\%$ HCl and Mattsson solutions, no apparent deviations in mechanical impact strength of forged-brass was observed. While, in U-bend stress corrosion cracking specimen, some microcracks were observed.

• Clean Technology
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• v.6 no.1
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• pp.61-69
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• 2000

In this study, generation process and properties of inorganic industrial waste which can be used in cement industry were investigated. The scheme of recycling to use the selected waste as raw materials, mineralizer and flux, admixture and raw materials for special cement was decided and then various experiments were carried out. The experimental results were as follows ; In the use of industrial waste as raw materials, ferrous materials could be substituted by Cu-slag, Zn-slag, electric arc furnace or convertor furnace slag etc., and a siliceous material could be substituted by sand from cast-iron industry. By-products from sugar or fertilizer industry, which has $CaF_2$ as the main component, and jarosite from Zn refinery enabled clinker phases to be formed at lower temperature by $100{\sim}150^{\circ}C$. Adding Cu slag and STS sludge in proper proportion to cement improved properties of cement. Fly ash and limestone powder as admixture had the same effect on cement. As a raw material for special cement, aluminium waste sludge could be used in making ultra early strength cement, which had the compressive strength of $300kg/cm^2$ within 2hours. And two different ashes from municipal incinerator could be raw materials of the cement which was mainly composed of $C_3S$ and $C_{11}A_7{\cdot}CaCl_2$ as clinker phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.334.1-334.1
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• 2014

태양전지, 터치센서와 같이 투명한 전극(TCO: Transparent conducting oxide)이 필요로 하는 곳에는 금속 산화물 형태의 ITO, ZnO, FTO와 같은 투명 전극이 사용된다. 그중에서 FTO는 저렴한 가격과 높은 투과율, 낮은 저항으로 주목을 받고 있다. 뿐만아니라 FTO 박막은 다른 산화물 전도체에 비해 구부림에 강한 저항성을 보여 주고 있다. FTO 박막의 캐리어 전하 생성 원리는 F 원자가 O 원자의 자리를 치환하게 되면서 잉여 전자의 발생으로 전기가 흐를 수 있다. 아직까지는 화학적 조성비에 유리한 CVD를 이용한 증착 방법이 많이 사용되고 있다. 스퍼터 장비 역시 공정 가스에 따라 화학적 조성비 변화가 가능하고 CVD와 비교하여 공정이 간단하며 연속 공정이 쉽고 대면적 적용이 가능하다. 본 실험은 본사에서 R&D용으로 제작한 Daon-1000 S 장비를 사용하였으며 DaON-1000 S는 3개의 2" sputter gun이 장착 되어 있어 co-sputtering이 가능한 장비이다.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.436-437
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• 2008

Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.304-304
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• 2007

고주파 모률에서 사용되는 기판소재는 저유전율과 낮은 loss 특성을 요구함으로 지속적인 연구를 필요로 한다. 지금까지의 ceramic/glass composite 에서 주로 사용된 ceramic filler는 Al2O3로 낮은 유전률을 구현에 한계가 있었다. Cordierite는 낮은 유전율 (${\varepsilon}_r$ < 4)을 나타내는 filler로서 그 가능성이 높지만 아직까지 보고된 결과들이 미흡한 실정이다. 따라서 본 연구에서는 cordierite filler와 SiO2-B2O3-Al2O3-RO (R : Zn, Sr, Ba, Ca)계의 glass를 혼합하여 LTCC용 기판소재로서의 가능성을 확인하고자 저온 동시소성이 가능한 소결온도인 $850^{\circ}C{\sim}1.000^{\circ}C$ 사이에서 소재의 소결실험을 진행하였다. 소결온도에 따른 상변화, 유전특성을 확인한 결과 filler로 사용된 cordierite상만이 관찰 되었으며 소결조건에 따라 5.0~5.5의 낮은 유전율과 1.000~1,500의 Q를 나타내는 것을 확인 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.68-71
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• 2002

The electromagnetic properties and thermal behavior of ferrite cores used in the blocking filter for PLC were investigated as a function of additives. The highest density of 4.98 $g/cm^2$ and permeability of 8221 were obtained to the specimen added $MoO_3$ 400 ppm, $SiO_2$ 100 ppm and CaO 200 ppm since the microstructures were compacted through reduction of pores in the specimen. The permeability was increased up to 13094 at $110^{\circ}C$ with increasing temperature of specimen, however, it was decreased precipitously to under 100 over $110^{\circ}C$. The exothermic behavior was observed that the temperature of specimens became $102^{\circ}C$ at 1MHz. In the consequence, the ferrite core developed by this research will maintain the stable electromagnetic properties since the temperature of ferrite core rose to $93^{\circ}C$ in the range of 10kHz to 450kHz bandwidth qualified for PLC.

• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.320-323
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• 2007

This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.401-404
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• 2008

Willemite ($Zn_2SiO_4$) are a wide range of applications such as a phosphor host and an important crystalline phase in glass ceramics, electrical insulators, glazes, and pigments. In this study, Willemite precursors were synthesized with zinc silicate gels from mixture of zinc nitrate solution and various sodium silicate solution by the geopolymer technique. To examine the crystallization behavior, precursors were have been monitored by the XRD. A pure willemite phase was obtained at $900^{\circ}C$. TEM investigations revealed that the sample with 50 nm particle size was obtained via heat-treated at $900^{\circ}C$ for W-3.