• 제목/요약/키워드: ZnS:Cu

검색결과 1,085건 처리시간 0.029초

White Electroluminescent Device by ZnS: Mn, Cu, Cl Phosphors

  • 김종수;박재홍;이성훈;김광철;권애경;박홍이
    • 반도체디스플레이기술학회지
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    • 제5권3호
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    • pp.1-4
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    • 2006
  • White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

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The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnOxS1-x Thin Films on Plastic

  • Han, Yong;Cho, Kyoungah;Park, Sukhyung;Kim, Sangsig
    • Transactions on Electrical and Electronic Materials
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    • 제15권1호
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    • pp.24-27
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    • 2014
  • In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

Synthesis and luminescence characterization of ZnS:Cu,Al phosphor by combustion method

  • Jeong, Young-Ho;Myung, Kwang-Shik;Park, Jin-Won;Hua, Yang;Han, Sang-Do
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.1009-1012
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    • 2003
  • A novel powder processing technique for the preparation of copper activated zinc sulfide (ZnS:Cu,Al) phosphor by combustion process has been proposed. Exothermic reaction between dissolved copper nitrate and carbohydrazide give small-sized particles in presence of alkali metal halides at lower temperature than the traditional method of preparation. This new route takes less than five minutes and requires much less energy. The optical and luminescence characteristics of ZnS:Cu,Al phosphor thus prepared were found to be enhanced significantly. Carbohydrazide acted as fuel at $500^{\circ}C$ with rapid heating and then the phosphors obtained were heated at $900^{\circ}C$ in an inert atmosphere for 3hrs to get better luminescent properties.

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ZnS:Cu를 이용한 후막 전계발광소자의 고휘도 특성 (High brightness property of Power Electroluminescent Device using ZnS:Cu)

  • 이종찬;박대희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권5호
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    • pp.349-353
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    • 1999
  • In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

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은 나노 와이어 전극을 이용한 ZnS:Cu, Mn 전계발광소자 (Transparent ZnS:Cu, Mn Powder Electroluminescent Device Using AgNW Electrode)

  • 정현지;김종수;김광철
    • 반도체디스플레이기술학회지
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    • 제20권2호
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    • pp.73-76
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    • 2021
  • This thesis described the optical and electrical properties of the alternating current powder electroluminescent device based on Ag nanowire as a transparent electrode. The Ag nanowire electrode showed the morphology of 20 nm in diameter and 15 ㎛ in length. The transparent electroluminescent devices that were fabricated using the nanomilled ZnS : Cu, Mn phosphor by bar-coating process showed the transmittance of 67%. In order to improve the luminous efficiency, it is necessary to apply the transparent dielectric layer and increase the amount of the nanophosphor while maintaining the transmittance.

Development of a New Double Buffer Layer for Cu(In, Ga) $Se_2$ Solar Cells

  • Larina, Liudmila;Kim, Ki-Hwan;Yoon, Kyung-Hoon;Ahn, Byung-Tae
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.152-153
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    • 2006
  • The new approach to buffer layer design for CIGS solar cells that permitted to reduce the buffer absorption losses in the short wavelength range and to overcome the disadvantages inherent to Cd-free CIGS solar cells was proposed. A chemical bath deposition method has been used to produce a high duality buffer layer that comprises thin film of CdS and Zn-based film. The double layer was grown on either ITO or CIGS substrates and its morphological, structural and optical properties were characterized. The Zn-based film was described as the ternary compound $ZnS_x(OH)_y$. The composition of the $ZnS_x(OH)_y$ layer was not uniform throughout its thickness. $ZnS_x(OH)_y$/CdS/substrate region was a highly intermixed region with gradually changing composition. The short wavelength cut-off of double layer was shifted to shorter wavelength (400nm) compared to that (520 nm) for the standard CdS by optimization of the double buffer design. The results show the way to improve the light energy collection efficiency of the nearly cadmium-free CIGS-based solar cells.

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중금속 오염 폐수처리에의 미생물 이용 전망 (Utilization of Microorganisms for Treating Wastewater Polluted with Heavy Metals)

  • 허종수;조주식
    • 한국환경농학회지
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    • 제13권3호
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    • pp.386-395
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    • 1994
  • 산업폐수 및 광산폐수 등으로부터 분리한 중금속 처리능력이 있는 미생물 균주들을 실제폐수처리에 적용시키기 위한 기초실험으로서 생물학적 활성슬러지공법의 소형폐수처리조를 이용한 각 중금속의 단독처리능력 및 여러가지 중금속의 동시 복합처리 능력을 조사한 결과를 요약하면 다음과 같다. 소형폐수처리조의 연속적인 처리과정에서의 각 중금속 처리균주들과 각 중금속들을 각각 단독으로 처리하여 HRT를 24시간으로 조절하였을 경우, 처리 12일 후 각 중금속 처리율은 Pb 처리균과 Pb만 100mg/l 되게 단독처리 했을때 처리수중 Pb 처리율은 약 93%였으며, Cd처리균과 Cd만 100mg/l 되게 단독처리하였을 경우 처리 12일 후 Cd 처리율은 약 90%였다. 그리고 Zn 처리균과 Zn만 100mg/l 되게 처리하였을 경우 처리 12일 후의 처리수중의 Zn 처리율은 약 80%였으며, Cu 처리균과 Cu만 단독으로 처리했을 경우에는 처리 12일 후 약 39%의 Cu 처리율을 나타내었다. 생물학적 활성슬러지공법의 소형폐수처리조를 이용한 연속처리과정에서의 여러가지 중금속과 여러가지 중금속처리균주들을 동시에 복합적으로 처리했을 경우의 여러가지 중금속의 동시 처리율을 조사한 결과는 다음과 같다. 폐수중 중금속 Pb, Cd, Zn 및 Cu 농도를 각각 100mg/l 되게 중금속을 복합 처리하고 각 중금속 내성균주(Pb, Cd, Zn 및 Cu내성균주)를 각각 1500mg/l의 MLSS가 되도록 복합 접종하여 소형폐수처리조에서 연속적으로 처리할 경우 HRT를 24시간으로 조절하였을 때 처리 12일 후 Pb, Cd, Zn 및 Cu의 처리율은 각각 75%, 90%,, 74% 및 48%였다.

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Chlorella vulgaris의 흡광도, 클로로필 및 개체수 통합 영향에 근거한 중금속 및 나노입자 독성 조사 (Toxicity Evaluation of Metals and Metal-oxide Nanoparticles based on the Absorbance, Chlorophyll Content, and Cell Count of Chlorella vulgaris)

  • 장현진;이문희;이은진;양신;공인철
    • 청정기술
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    • 제23권1호
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    • pp.27-33
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    • 2017
  • 본 연구에서는 중금속 7종(Cu, Cd, Cr, As(III), As(V), Zn, Ni) 및 나노입자 5종(CuO, ZnO, NiO, $TiO_2$, $Fe_2O_3$)에 대한 독성을 수계 대표 생물종인 녹조류 Chlorella vulgaris를 이용한 생물검정법으로 평가하였다. 조류에 미치는 영향은 흡광도, 클로로필 및 개체수 측정에 대한 결과를 통합하여 평가하였다. 중금속의 통합결과독성($TEC_{50}$) 순서는 Cr ($0.7mgL^{-1}$) > Cu ($1.7mgL^{-1}$) > Cd ($3.2mgL^{-1}$) > Zn ($3.9mgL^{-1}$) > Ni ($13.2mgL^{-1}$) > As(III) ($17.8mgL^{-1}$) ${\gg}$ As(V) (> $1000mgL^{-1}$)로 나타났다. 중금속은 측정종말점에 따라 일부 상이한 민감도와 독성이 조사되었다. 나노입자의 독성($TEC_{50}$) 순서는 ZnO ($2.4mgL^{-1}$) > NiO ($21.1mgL^{-1}$) > CuO ($36.6mgL^{-1}$) > $TiO_2$ ($62.5mgL^{-1}$) > $Fe_2O_3$ ($82.7mgL^{-1}$)로 나타났다. 나노입자는 측정종말점간에 비슷한 민감도와 독성을 보였다. 따라서 오염물의 독성을 평가하기 위해서 단일 방법에 의한 결과보다는 다양한 측정종말점의 통합결과에 근거한 접근이 적절할 것이다.

월류(月留) 은(銀)-금(金) 열수광상(熱水鑛床)에서 산출된 함(含) Ge 광물(鑛物)인 Argyrodite의 산상(産狀)과 지구화학(地球化學) (Occurrence and Geochemistry of Argyrodite, a Germanium-Bearing Mineral(Ag8GeS6), from the Weolyu Ag-Au Hydrothermal Vein Deposits)

  • 소칠섭;윤성택;최선규
    • 자원환경지질
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    • 제26권2호
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    • pp.117-127
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    • 1993
  • 월류(月留) 은(銀)-금(金) 열수광상(熱水鑛床)의 맥상광석(脈狀鑛石)내에는 평균 34.9g/ton, 최대 145g/ton에 이르는 상당량의 게르마늄 (Ge)이 아지로다이트 (argyrodite)의 형태로 산출된다. 본 연구에서는, 전자현미분석법(電子顯微分析法)에 의하여 아지로다이트와 수반 광물의 광물화학(鑛物化學)을 검토하였고, ICP 질량(質量) 분광분석법(分光分析法)에 의하여 13개 광석시료내에 함유된 28개 원소(元素)의 정량분석(定量分析)을 수행하였다. 아지로다이트는 탄산염(炭酸鹽) 광물(鑛物)+석영(石英)+자연은(自然銀)+휘은석(煇銀石)+함은(含銀) 유염(硫鹽) 광물의조합으로 구성되는 후기 광물군(鑛物群)내에 산출되며, 이는 게르마늄의 침전(沈澱)작용이 초기 금(金) 및 후기의 은(銀) 침전(沈澱)으로 구성된 복잡한 광화작용(鑛化作用)중 후반부에서 진행되었음을 지시한다. 아지로다이트의 평균(平均) 화학조성(化學造成)은 $Ag_{7.90}(Ge_{0.76}Sn_{0.04})S_6$이며, 미량의 Cu, Fe, Sb, As, Sn 및 Zn이 함유되고, 특히 Cu에 의한 Ag, Sb에 의한 Ge의 체계적인 치환(置換)현상이 인지된다. 광석(鑛石)시료에 대한 정량분석결과, 금속원소의 침전작용(沈澱作用)은 $Fe{\rightarrow}Pb$, $Zn{\rightarrow}Cu{\rightarrow}Ag$, Sb, As, Ge의 순서로 진행되었고, 특히 Ge은 As 및 Sb와 강한 지화학적(地化學的) 친화도(親和度)를 가졌음을 규명하였다. Ge은 Cu, Pb, Zn, Mo 및 Sr과도 미약한 정(正)의 수반관계를 나타낸다. 월류(月留) 천열수계(淺熱水系)내 순환천수(循環天水)의 유입량(流入量) 증가에 기인한 냉각작용(冷却作用)에 수반하여, Ge은 주로 $175^{\circ}{\sim}210^{\circ}C$의 온도 범위에서 침전(沈澱)하였다.

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Fabrication of CuZn Nanofibers by Electrospinning Method

  • 최아롬;박주연;정은강;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.374.1-374.1
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    • 2016
  • Copper and zinc are well known elements with antibacterial effect. So in this research, Cu and Zn (CZ) nanofibers (NFs) were fabricated by electrospinning method using polyvinylpyrrolidone (PVP) for adjusting viscosity. The CZ/PVP precursor solutions were prepared with copper sulfate pentahydrate, and zinc acetate dihydrate. Distilled water was used for solvent and PVP was used to regulate the viscosity of precursor solution. The CZ/PVP NF composites were obtained by electrospinning method using the precursor solution. The average diameter of obtained CZ/PVP NFs was determined by optical microscopy using Motic image plus 2.0 program and was found to be 490 nm. The chemical environment of the obtained CZ/PVP NF composites was investigated with X-ray photoelectron spectroscopy (XPS). After heating the obtained CZ/PVP NF composites at 353 K, the solvent was removed. The characteristic C 1s, Cu 2p, and Zn 2p core level XPS peaks were observed. After calcination the CZ/PVP NF composites at 873 K in Ar environment for 5 hrs, PVP was decomposed at this temperature and CZ NF was obtained. This was confirmed by decreasing the intensity of C 1s.

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