• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.235-237
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• 2016

Oxide/metal/oxide (OMO) thin films were fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) and an Ag metal layer on a glass substrate at room temperature. The optical and electrical properties of the a-IGZO/Ag/a-IGZO samples changed systemically depending on the thickness of the Ag layer. The transmittance in the visible range tends to decrease as the Ag thickness increases while the resistivity, carrier concentration, and Hall mobility tend to improve. The a-IGZO/Ag (13 nm)/a-IGZO thin film with the optimum Ag thickness showed an average transmittance (T_av) of 71.7%, resistivity of 6.63 × 10⁻⁵ Ω·cm and Hall mobility of 15.22 cm²V⁻¹s⁻¹.

• Economic and Environmental Geology
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• v.24 no.4
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• pp.347-361
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• 1991

The Sangeun ore deposit is located in a volcanic belt within the Gyeongsang Basin in south western Korea. The ore deposit is of representative epithermal Au-Ag quartz vein type developed in lapilli tuff. This paper presents the mineralization with special emphasis on mineral zoning of the deposits. Principal points are summarized as follows: (1) Four stages of mineralization are recognized based on macrostructures. From ealier to later they are stage I(arsenopyrite-pyrite-quartz), stage II(Au-Ag bearing Pb-Zn-quartz), stage III(barren quartz), and stage IV(dickite-quartz). (2) Electrum principally occurs with arsenopyrite and galena in stage II, and has chemical compositions of 72.9-67.1 Ag atom %, and has Ag/Au ratio of 2.69-2.04. (3) Sphalerite varies in its FeS content according to the mineralization stages; 22.03-18.60 mole % FeS and 1.33-0.23 mole % MnS in stage IB, 16.11-8.64 mole % FeS and 1.33-0.23 mole % MnS in stage II. (4) Alteration zones of mineral assemblage, from the vein to the wall-rock, consist of sericite - quartz - pyrite, sericite - quartz - dickite, sericite - chlorite plagioclase respectively.

• Economic and Environmental Geology
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• v.44 no.5
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• pp.359-372
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• 2011

TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.338.2-338.2
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• 2014

투명반도체산화물은 우수한 광학적, 전기적 특성을 가지고 있기 때문에 차세대 박막트랜지스터의 채널층으로 각광을 받고 있다. 특히, 그 중에서도 a-IGZO를 이용한 TFT는 높은 가시광선 투과율(>80%)과 큰 전하이동도(>10 cm2/Vs) 를 갖는 등 좋은 광학적, 전기적 특성을 갖기 때문에 많은 연구가 이루어졌다. 여러 연구들에 의하면, a-IGZO TFT는 소스/드레인의 전극으로 어떤 물질을 사용하는지에 따라서 동작특성에 큰 영향을 미치는 것으로 알려져 있다. 일반적으로, a-IGZO 박막은 n형 반도체로써 일함수가 작은 금속과는 ohmic contact를 형성하고, 일함수가 큰 금속과는 Schottky barrier를 형성한다고 알려져 있다. 이와 관련된 대부분의 이전의 연구들에서는 각각의 전극물질에 따라 전기적인 특성변화에 초점을 맞춰서 연구하였다. 본 연구에서는 일함수가 작은 Ag와 일함수가 큰 Au를 a-IGZO의 박막 위에 얇게 증착하면서 이에 따른 고분해능 광전자분광(high-resolution x-ray photoelectron spectroscopy) 정보의 변화를 분석함으로써, 금속의 증착에 따른 금속층과 a-IGZO 표면 및 계면에서의 화학적 상태의 변화를 연구하였다. Au 4f, Ag 3d는 metallic property를 나타내기 이전까지는 lower binding energy(BE) 쪽으로 shift하였으며, In 3d 또한 lower BE 성분이 크게 증가하였다. O 1s, Ga 3d, Zn 3d들은 상대적으로 적은 변화를 나타내었는데, 이는 Ag, Au가 In과 상대적으로 더 많이 상호작용한다는 것을 의미한다. 본 발표에서는 이들 core level의 정보들과, 가전자대의 분광정보, 그리고 band bending의 정보가 제시될 것이며, 이 정보들은 metal 증착에 따른 contact 특성을 이해하는데 기여할 것으로 기대한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.49-52
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• 2002

Degradation characteristics of cathodoluminescence (CL) of ZnS:Ag,Cl phosphor were investigated with measurements of CL and photoluminescence (PL). Phosphoric acid treatment was performed to phosphor particles in order to improve CL degradation of phosphor screen that occurred during panel sealing process, and we will discuss mechanisms of degradation and improvement of luminescence mainly with help of AES (auger electron spectroscopy) analysis.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.269-279
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• 2005

In this study, detectors characteristics for simultaneous counting of alpha and beta ray in a pipe were estimated. The detector were composed of thin ZnS(Ag) scintillator and plastic detector. The scintillator for counting alpha particles has been applied a polymer composite sheet, having a double layer structure of an inorganic scintillator ZnS(Ag) layer adhered onto a polymer sub-layer. The other for counting beta particles used a commercially available plastic scintillator. It was confirmed that the detectors were suitable for counting the in-pipe contamination.

• Journal of Environmental Science International
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• v.10 no.6
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• pp.387-391
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• 2001

The hydroxyapatite(HAp) as a carrier the for ion exchange agent of $Ag^+$ions was prepared in semiconductor fabrication, The Ca/P molar ratio of the HAp was 1.65. The HAp is molded in shape of the antimcrobial ball and then sintered at 100$0^{\circ}C$ Ag-containing HAp(HAp-Ag) was prepared by incorporating $Ag^+$/ions in HAp crystals through an ion-exchange reaction in solutions containing 0.01M $AgNO_3$. The antimicrobial effect of HAp-Ag for bacteria such as Escherichial coli and Staphylococcus aureus has been Investigated. The concentrations of silver in the antimicrobial ball was determined by inductively coupled plasma and the amount of $Ag^+$ions was 9.0$\mu\textrm{g}$/g. The HAp-Ag exhibited excellent antimicrobial effect for bacteria such as E. coli and S. aureus. The bactericidal activity was considered to be caused by direct contact of bacteria with $Ag^+$ions in the HAp crystals. The HAp would likely to be possible as a carrier of antimicrobial metal ions such as Ag, Cu, and Zn by recycling of waste sludge in the semiconductor fabrication process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.99-99
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• 2009

차세대 대체에너지로서 유기태양전지는 저비용, flexible한 장점이 있다. 그러나 에너지 효율이 상대적으로 낮아 고효율 유기태양전지 개발이 필요하다. 이 문제를 개선하기위해 본 실험에서는 전기화학적인 방법으로 ZnO 나노구조체 (nanowire, film)를 ITO위에 전착하였다. ZnO 나노구조체는 Poly(3-hexylthiophene)(P3HT):[6,6]-Phnyl-C61-butyric acid methyl ester (PCBM)에서 엑시톤된 전자와 홀의 charge collector와 electron path way로서 사용되었다. 유/무기 하이브리드 태양전지의 구조는 Ag/P3HT:PCBM/(A)/ITO로 사용하였으며 (A)는 (1) ZnO nanowire/ZnO film (2)ZnO nanowire (3)ZnO film으로, 각각의 효율을 측정하였다. 생성된 ZnO 나노구조를 FE-SEM, XRD, TEM, UV/vis로 분석하였고 AM1.5G SUN을 기준으로 하여 Solar simulator로 효율을 측정하였다. 측정결과 Jsc값의 증가를 효율이 향상됨을 알 수 있었다.