• Title/Summary/Keyword: ZnS: Cu

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Effects of Se/(S+Se) Ratio on Cu2ZnSn(SxSe1-x)4 (CZTSSe) Thin Film Solar Cells Fabricated by Sputtering

  • Park, Ju Young;Hong, Chang Woo;Moon, Jong Ha;Gwak, Ji Hye;Kim, Jin Hyeok
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.75-79
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    • 2015
  • Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

Organic photovoltaic effects using heterojunction of $CuPc/C_{60}$, $ZnPc/C_{60}$ depending on the layer thickness ($CuPc/C_{60}$, $ZnPc/C_{60}$의 이종접합을 이용한 유기 광기전 소자에서 유기층의 두께에 따른 특성 연구)

  • Hur, S.W.;Kim, S.K.;Lee, H.S.;Lee, W.J.;Choi, M.G.;Lee, J.U.;Kim, T.W.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1079-1082
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    • 2004
  • CuPc와 ZnPc를 이용하여 이종 접합 구조에서의 광기전 특성을 연구하였다. $CuPc/C_{60}$, $XnPc/C_{60}$의 이종 접합 구조에서 $C_{60}$의 접합 두께 비율을 1:1 (20nm:20nm), 1:2 (20nm:40nm), 1:3 (20nm:60nm)로 가변하여 두께와 물질에 따른 광기전 특성 및 엑시톤 억제층의 효과를 분석하였다. 광원은 500W Xe lamp를 이용하였으며, 광원의 세기는 보정된 radiometer/photometer와 Si-photodiode로 dark, 10, 25, 60, 80 그리고 100mW/$cm^2$로 주사하였다.

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A Study on the Influence of Substituting Cu Eine Particle for CuO on NiCuZn Ferrite (CuO 대신 Cu 미분말 치환이 NiCuZn Ferrite에 미치는 영향에 관한 연구)

  • Kim, Jae-Sik;Koh, Jae-Gui
    • Journal of the Korean Magnetics Society
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    • v.13 no.1
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    • pp.15-20
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    • 2003
  • Diffusion speed of Cu metal fine particle is fast better than CuO, so it will promote grain growth in sintering. In this paper, the influence on substituting Cu fine particle for CuO of NiCuZn ferrite with basic composition (N $i_{0.204}$C $u_{0.204}$Z $n_{0.612}$ $O_{1.02}$)F $e_{1.98}$ $O_{2.98}$ has been investigated with varying Cu/CuO ratio. The perfect spinel structure of sintered specimen at 90$0^{\circ}C$ was confirmed by the analysis of XRD patterns. The best condition was obtained when the ratio of Cu/CuO was 60%, and the permeability was 1100 and Ms was 87 emu/g in this condition. Cu has influenced on grain growth in sintering, substituting Cu fine particle for CuO could lower sintering temperature over the 3$0^{\circ}C$. After sintering, substituting Cu performed as good as CuO.s CuO.s CuO.

Study on Low-Temperature sintering of Co2Z type Ba ferrites for chip inductor (Chip inductor용 Co2Z type Ba-ferrite의 저온소결에 관한 연구)

  • 조균우;한영호;문병철
    • Journal of the Korean Magnetics Society
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    • v.12 no.5
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    • pp.195-200
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    • 2002
  • Low temperature sintering of Co$_2$Z type Ba ferrites with various oxide additives has been studied. Co$_2$Z phase was obtained by 2 step calcination and XRD peaks showed a good agreement with the peaks of the standard Co$_2$Z phase, except for some minor extra peaks. ZnO-B$_2$O$_3$ glass, ZnO-B$_2$O$_3$ and CuO, ZnO-B$_2$O$_3$ and Bi$_2$O$_3$, and ZnO-Bi$_2$O$_3$ glass were added to lower sintering temperatures. Specimens were sintered at the temperature range between 900 $^{\circ}C$ and 1000 $^{\circ}C$. In the single addition of ZnO-B$_2$O$_3$ glass, the specimen with 7.5 wt% showed the highest shrinkage. Specimens with complex addition of ZnO-B$_2$O$_3$ glass with CuO or Bi$_2$O$_3$ showed higher shrinkages and initial permeabilities than single addition of ZnO-B$_2$O$_3$ glass. Shrinkages and initial permeabilities of the specimens with ZnO-Bi$_2$O$_3$ glass were higher than those of ZnO-B$_2$O$_3$ glass addition.

코어-쉘 나노입자를 이용한 메모리 소자에서 쉘의 유무에 따른 전도도 특성 및 전하수송 메커니즘

  • Yun, Dong-Yeol;Ryu, Jun-Jang;Kim, Tae-Hwan;Kim, Sang-Uk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.300.1-300.1
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    • 2014
  • 유기물 박막에 나노입자가 분포되어 있는 나노복합체를 이용한 전자 소자는 낮은 소비 전력, 낮은 공정 가격, 그리고 높은 기계적 휘어짐이 가능하기에 차세대 전자 소자로 많은 연구가 진행되고 있다. 친환경 소자를 지향하는 현대 기술에서 환경 친화적 코어-쉘 구조의 나노입자를 이용한 나노복합체는 차세대 전자 소자 중 비휘발성 메모리 소자 연구에서 뛰어난 소자 성능을 보여주고 있어 큰 관심을 받고 있으나 코어-쉘 나노입자를 이용한 비휘발성 메모리 소자의 쉘의 유무에 따른 전도도 특성 및 전하수송 메커니즘 연구는 아직 미미한 실정이다. 본 연구에서는, indium-tin-oxide가 코팅된 polyethylene terephthalate 기판 위에 CuInS2 (CIS)-ZnS 친환경 코어-쉘 나노입자가 poly (methylmethacrylate) (PMMA) 안에 분산된 박막을 이용한 비휘발성 메모리 소자를 제작하여 ZnS 쉘이 전기적 전도도에 미치는 영향을 관찰 하였다. CIS-ZnS 코어-쉘 나노입자에서 ZnS 쉘이 없어도 메모리 소자의 전류-전압 특성에서는 높은 전도도 (ON)와 낮은 전도도 (OFF) 상태가 존재하는 전류 쌍안정성 동작을 보이지만, ZnS 쉘의 유무에 따라 ON/OFF 비율 차이를 보여 전도도 특성이 다름을 관측 하였다. 반복된 전계적 스트레스에 의한 전도도 상태 유지 능력 측정을 수행하여 ZnS 쉘의 유무에 따른 소자의 전도도 안정성 능력을 관측하였다. 측정된 전기적 특성을 기반으로 PMMA 박막 안에 분산된 CIS-ZnS 코어-쉘 나노입자를 이용한 비휘발성 메모리 소자에서 ZnS 쉘의 따른 전도도 특성 및 전하수송 메커니즘 특성을 설명하였다.

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Sputtering Deposition of $CuInSe_{2}$ and $CuInZnSe_{2}$ Thin Films using Mixture Binary Chalcogenide Powders

  • Wibowo, Rachmat Adhi;Guk, Jun-Pyo;Kim, Gyu-Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.257-260
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    • 2007
  • In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.

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Luminescent Characteristics of SrS:Cu,X Thin-Film Electroluminescent(TFEL) Deviecs depending on Coactivatiors (부활성제에 따른 SrS:Cu,X 박막 전계발광소자의 발광 특성)

  • Lee, Soon-Seok;Ryu, Chang-Keun;Lim, Sung-Kyoo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.1
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    • pp.29-35
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    • 2000
  • Luminescent characteristics of SrS:Cu,X TFeL devices fabricated by electron-beam deposition system were studied. The SrS powders were used as the host materials and Cu, $CuF_2,\;Cu_2S$ or CuCl powders were added as the luminescent center. The emission spectra of the SrS:Cu,X TFEL devices strongly depended on coactivators. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:$Cu_2S$ TFEL device were 1443 cd/$m^2$ and 2.44 lm/w, respectively. Green color was observed from this TFEL device. The luminous efficiency of SrS:$Cu_2S$ TFEL device was higher than that of ZnS:Tb TFEL device, and it also could be good green phosphors for TFEL devices. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:CuCl TFEL device were 262 cd/$m^2$ and 0.26 lm/w, respectively. Blue color was emitted from this TFEL device.

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Interpretation of heavy metal elements from the road dusts using GIS (GIS를 이용한 도로 분진의 중금속원소 함량 해석에 관한 연구)

  • 이효재;이근상;이언호;장영률
    • Spatial Information Research
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    • v.10 no.2
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    • pp.201-213
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    • 2002
  • Chemical analyzes were carried out the samples from roadsides of the Gwangju city. The purpose of this research is to investigate the concentrations and distribution patterns of heavy metals due to urbanization and industrialization in the Gwangju city This study area is not significantly contaminated based on the concentrations of Cd, Cu, Fe, Mn, Pb and Zn. However, the concentrations of the chemical elements analyzed are locally higher than those of serious contamination level indicated by Ministry of environment. The dust pH is in the rage of 5.60-7.09 and was generally neutral, and there are no difference in pollution area and nonpollution area. Chemical analyses utilized are dilution by 0.1N HCl. In result of analysis by the method using 0.1N HCl, concentrations of Cd and Cu are a little high in Gwangchondong of Seo-Gu. Concentrations of Mn and Pb are a little high in Buk-Gu and Nam-gu, and Concentrations of Zn are generally higher than average of soils. Zn, in the study area, keeps polluting greatly as Zn concentration of average is 150.9ppm. All of P.I values are lower than 1, it means heavy metal pollution is not serious.

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A New Catalytic System for Methylchlorosilanes(MCS) Synthesis (Methylchlorosilanes 합성촉매에 관한 연구)

  • Cho, Chul Kun;Han, Kee Do
    • Applied Chemistry for Engineering
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    • v.8 no.5
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    • pp.804-810
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    • 1997
  • A new catalyst system composed of a main catalyst(copper chloride) and promotors of zinc chloride, tin, and cadminum showed excellent performances in the MCS synthesis from silicon and methylchloride. The mixture of catalyst/silicon(5/95), Zn/Cu=0.1, Sn/Cu=0.001, and Cd/Cu=0.001 was mixed in a slurry phase and activated into the contact mass, then it was used for MCS synthesis. The average selectivity was 92% at the silicon consumption of 92% and reaction rate was 175(g-MCS/hr.kg-silicon) at conversion of silicon.

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