• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1232-1233
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• 2006

To co-fire with commercial LTCC (Low Temperature Co-fired Ceramic) materials at $850^{\circ}C{\sim}880^{\circ}C$, different contents of $B_2O_3$ were added to the $Bi_2O_3-ZnO-Nb_2O_5$ (BZN) ceramics. According to the test results, the cubic phase of BZN was transformed into orthorhombic in all the test materials. $BiNbO_4$ phase was formed in test materials with $2{\sim}5wt%$ of $B_2O_3$ addition. The phase transformation of cubic BZN was controlled during the synthesis process with excess ZnO content. The Cubic and orthorhombic phases of BZN could coexist and be sintered densely at $850^{\circ}C/2hr$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.210-214
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• 2016

We investigated the sintering behavior and piezoelectric properties of lead-free $(K_{0.5}Na_{0.5})NbO_3$ ceramics co-doped with excess 0.01 mol ZnO and x mol $MnO_2$, where x was varied from 0 to 0.03. Excess $MnO_2$ addition was found to retard the grain growth and densification during sintering. However, 0.005 mol $MnO_2$ addition improved the piezoelectric properties of 0.01 mol ZnO added $(K_{0.5}Na_{0.5})NbO_3$ ceramics. The planar mode piezoelectric coupling coefficient, electromechanical quality factor, and piezoelectric constant $d_{33}$ of 0.01 mol ZnO and 0.005 mol $MnO_2$ added specimen were 0.40, 304, and 214 pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.13-16
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• 1994

In this paper, xPb(Zn$_{1/3}Nb_{2/3}$)$O_3$-yPbTiO$_3$-zPbZrO$_3$-(0.5wt%)MnO$_2$ ceramics were fabricated by the mixed oxide method sintered at $1250^{\circ}C$ for 2[hr] and then the deielectric, electromechanical coupling factor($K_{p}$ and mechanical coupling factor(Qm) properties were investigated. In 0.1PZN-0.45PT-0.45PZsample, dielectric properties and electromechanical coupling factor were 829 and 29%. In the case of 0.5PZN-0.45PT-0.50PZ sample, that was 101 according to mechanical quality facotr. molphotropic phase boundary(MPB) certained area which $PbTiO_3$addition quatity 40∼50[㏖%].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.873-877
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• 2007

In order to apply a complex multilayer chip LC filter, this study has estimated the interfacial reaction and coupling properties of dielectric materials $Pb(Fe_{1/2}Nb_{1/2})O_3$ and Ni-Zn-Cu ferrite materials through low-temperature co-sintering (LTCS). PFN powders were fabricated using double calcinated at $700^{\circ}C$ and then $850^{\circ}C$. While the perovskite phase rate was found to be 91 %, after heat treatment at $900^{\circ}C$ for 6h, the perovskite phase rate and density exhibited a value of 100 % and 7.46$g/cm^3$, respectively. The PFN/Ni-Zn-Cu ferrite, PFN/CUO (or $Pb_2Fe_2O_5$) and ferrite/CuO (or $Pb_2Fe_2O_5$) were mechanically coupled through interfacial reactions after the specimen was co-sintered at $900^{\circ}C$ for 6 h. No intermediate layer exists for the mutual coupling reaction. This result indicates the possibility of low-temperature co-sintering without any interfacial reaction layer for a multilayer chip LC filter.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.934-942
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• 1990

The quarternary system ceramics 0.5[yPb(Zn1/3Nb2/3)O3-(1-y)Pb(Ni1/3Nb2/3)O3]-0.5[xPbTiO3-(1-x)PbZrO3](PZN-PNN-PT-PZ) was fabricated by the columbite precursor method to obtain a stabilized perovskite structure and by conventional method to evaluate the efficiency of the former methd. Dielectric and piezoelectric properties were investigated and the stability of the perovskite phase was studied as a function of PZN and PT contents and firing temperature. In the samples prepared by the columbite precursor method, the pyrochlore phase, which is detrimental to both the dielectric and piezoelectric properties, was not observed in the absence of PZN, and electric properties were improved even when fabricated at low temperature. By adding PZN, some pyrochlore phase appeared and the morphotropic phase boundary of the samples shifted to more Zr-rich composition. The temperature dependence of piezoelectric constant decreased with the addition of PZN, due to the rising of the Curie point.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.77-82
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• 1990

The temperature and the composition dependence of the dielectric properties of the solid solution materials in the system $xBa(Zn_{1/3}Nb_{2/3})O_{3}\[BZN]-(1-x)\Sr(Zn_{1/3}Nb{2/3)O_{3}\[SZN]$ at microwave frequency was studied. The dielectric constant and unloaded Q were $40.5{\pm}0.5,5980{\pm}100$ respectively for BZN at 10 GHz and $36.9{\pm}0.5,2700{\pm}100$ for SZN at 10.2GHz. The temperature coefficient of the resonant frequency was $+27.5ppm/{\circ}C$ for BZN and $-39.1ppm/{\circ}C$ for SZN. The results also showed that 0.3 BZN-0.7 SZN is the most temperature-stable composition among xBZN-(1-x) SZN solid solutions. In this case, the dielectric constant, the unloaded Q and $\tau_{f}$ at 9.8GHz were $41.5{\pm}0.2,2920{\pm}100$ and $-3.5ppm/{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.67-69
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• 2004

ZnO varistor ceramics which were fabricated with variation of added of 0.01, 0.02, 0.03, 0.05, 0.1mol% $Nb_2O_5$ sintered at $1150^{\circ}C$. In the specimen added 0.05mol% $Nb_2O_5$, sintered density was $5.87g/cm^3$ and electrical properties were superior to any other components. The nonlinear coefficient was 75, and clamping voltage ratio was 1.40. And, endurance surge current in the specimen added 0.05mol% $Nb_2O_5$ was $6500A/cm^2$, and deviation of varistor voltage was -1.7%. As P.C.T and T.C.T environment test were succeed in all specimens, and deviation of varistor voltage in the specimen added 0.3mol% $Nb_2O_5$ was -0.81%. All specimens showed a good leakage current property in the High Temperature Continuous Load Test for 1000hr, at $85^{\circ}C$, and variation rate of the varistor voltage was -1.71%.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.134.1-134
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.204-204
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• 2010

본 연구에서는 Glass 기판 위에 우수한 광 투과도를 갖는 ZnO 기반의 Thin Film Transistor (TFT)를 제작하였으며, 이에 대한 전기적 및 광학적 특성을 분석하였다. 소자 구조의 제작은 Maskless Aligner를 이용한 Optical lithograph법을 이용하였다. 채널층은 ZnO로 하였고 Source/Drain 영역은 GaZnO로 하여 전체구조가 ZnO 기반의 homogeneity를 유지하게 하였다. 이때 Gate 절연막은 Bi1.5Zn1Nb1.5O7와 SiO2 두가지 종류로 하여 각각의 특성을 비교하였다. 본연구에서 TFT구조의 각 층은 모두 r. f. 마그네트론 스퍼터법으로 증착하였다. 제작된 TFT들은 채널층 및 절연막 형성 등에 관여된 세부적 실험변수의 변화에 관계없이 약 75% 이상의 우수한 광투과도 특성을 보였다. 전기적 특성 평가에서, 제작된 TFT들은 전반적으로 비교적 낮은 문턱전압과 높은 이동도를 보였다. 하지만, 트랜지스터의 전기적 전송 특성의 주요 인자들인 채널-이동도, 스위칭, 누설 및 이력 등은 ZnO 채널층 혹은 Bi1.5Zn1Nb1.5O7 절연막 형성 시 주입되는 O2 가스의 분압에 의존하는 것이 관측되었다. 이를 통하여 트랜지스터의 각 세부 영역의 구조 및 형성 조건이 트랜지스터의 전기적 특성에 미치는 영향과 상관관계에 대하여 논의한다.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.