• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.135-136
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• 2013

본 연구에서는 ripple 구조의 ZnO 박막을 역 구조 태양전지 내에서의 전자 수집층 으로 사용하였으며, $P3HT/IC_{60}BA$와 PEDOT을 각각 active layer와 정공 수집층 으로 사용하였다. zinc acetate의 농도 조절을 통해 다양한 두께와 roughness를 갖는 ripple 구조의 ZnO를 합성할 수 있었으며, hot plate위에서의 온도 조절을 통해 저온에서의 ZnO ripple를 합성할 수 있었다. 다른 농도를 사용해 합성한 ZnO ripple들 보다 0.6M의 zinc acetate를 사용하였을 때 가장 높은 power conversion efficiency (PCE) 와 external quantum efficiency (EQE)를 보여주었다. AFM과 SEM 분석을 통해 0.6M의 zinc acetate조건에서는 표면적이 가장 넓으면서도 다른 농도를 사용 하였을 때에 비해 상대적으로 ripple의 깊이가 더 깊은 표면을 갖는 ZnO가 생성됨을 알 수 있었다. 이는 상대적으로 넓은 surface area를 갖는 ZnO ripple과 active layer 계면사이에서 보다 용이한 charge transfer가 이루어 질수 있기 때문이다.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.490-497
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• 2016

In this study, 3-dimensional ripple structured anion (chlorine) doped ZnO thin film are developed, and used as electron transporting layer (ETL) in inverted organic photovoltaics (I-OPVs). Optical and electrical characteristics of ZnO:Cl ETL are investigated depending on the chlorine doping ratio and optimized for high efficient I-OPV. It is found that optimized chlorine doping on ZnO ETL enhances the ability of charge transport by modifying the band edge position and carrier mobility without decreasing the optical transmittance in the visible region, results in improvement of power conversion efficiency of I-OPV. The highest performance of 8.79 % is achieved for I-OPV with ZnO:Cl-x (x=0.5wt%), enhanced ~10% compared to that of ZnO:Cl-x (x=0wt%).

• Journal of Welding and Joining
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• v.19 no.4
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• pp.429-436
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• 2001

The effect of welding condition on the microstructures of the weld metal in A7N01 welded by $CO_2$ laser was investigated. The number of ripples was increased with decreasing power and increasing welding speed. In the bead without ripple lines, the subgrain microstructures distribution from the fusion line toward the center of the bead were in the order of cellular, dendritic and equiaxed dendrite. However, in the bead with ripple lines, cellular and dendritic were formed between the fusion boundary and the ripple line. Inaddition, those structures were also observed between the ripple line. Equiaxed dendrites were formed only at the center line region. Cellular and dendritics formed near the ripple line were larger than those formed near the fusion boundary. The cooling rates estimated by the dendrite arm spacing were in the range of 200 to 1150oC/s. Cooling rate was increased with decreasing the power and increasing the welding speed. Mg and Zn segregated at the boundaries of cellulars and dendritics, Mg was segregated more than Zn. The segregation of Mg and Zn decreased with increasing cooling rate. Hardness of the weld metal was lower than that of the base metal in all welding conditions and increased as the cooling rate increased.

• Journal of the Korean Vacuum Society
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• v.4 no.4
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• pp.413-416
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• 1995

고주파 마그네트론 스펏터링법을 이용하여 ZnO막을 제조하고 유리기판 위에 ZnO-SAW필터를 제작하였다. ZnO막의 제조 조건은 고주파 전력 150W, 기판온도 $200^{\circ}C$, 분위기압 5mTorr 및 O2/(Ar+O2)비 50%였다. 한편 IDT(Inter-digital transducer)전극은 전극 폭을 2.56mm, 전극 거리를 2,936mm, λ/8폭을 $8mu$m로 설계하였다. 제작된 ZnO-SAW필터의 주파수 응답을 측정하기 위해 소자는 mount(TO8)에 고정시켰다. ZnO SAW필터의 통과 대역(3 dB대역폭)은 345.2~44.8 MHz로 9.6MHz의 대역 폭을 나타내었으며 중심주 파수는 40 MHz를 나타내었다. 또한 삽입 손실은 39 dB, 통과 대역에서의 리플(ripple)은 $\pm$ 0.8 dB 및 rejection은 17 dB를 나타내었다.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.353-356
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• 2014

We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electron-collecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.301-302
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• 2012

본 연구에서는 ripple 형태의 ZnO 박막을 역구조 태양전지의 전자 수집층으로 사용하였으며, 원자층 증착법 (Atomic Layer Deposition, ALD)을 이용하여 $TiO_2$ 박막을 ZnO 표면에 증착하였다. $TiO_2$가 ZnO 표면 위에 약 <3nm 정도 두께의 초미세 박막으로 형성되었을 경우 태양전지의 성능이 향상되었다. 특히 Jsc (short-circuit current)와 전환효율 값의 향상을 보였다. 반면 $TiO_2$를 더 두껍게 증착되었을 경우 오히려 태양전지 성능이 떨어지는 결과를 얻었다. 이와 같은 결과 전자를 수집하는 ZnO 위에서 $TiO_2$가 장벽으로 작용함으로써 전자의 이동을 억제하기 때문으로 풀이된다. 반면 $TiO_2$가 초미세 박막으로 형성되었을 때 ZnO 표면에 존재하는 결함자리, 즉 전자와 정공이 재결합하는 자리를 덮어줌으로써 오히려 태양전지의 성능을 향상시키게 된다. 본 연구에서는 ALD 방법을 이용하여 $TiO_2$의 미세한 두께조절을 통해 태양전지 성능향상이 가능함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.2-77.2
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• 2013

In this talk, I will briefly review recent results of my group related to application of atomic layer deposition (ALD) for fabricating environmental catalysts and organic solar cells. ALD was used for preparing thin films of TiO2 and NiO on mesporous silica with a mean pore size of 15 nm. Upon depositing TiO2 thin films of TiO2 using ALD, the mesoporous structure of the silica substrate was preserved to some extent. We show that efficiency for removing toluene by adsorption and catalytic oxidation is dependent of mean thickness of TiO2 deposited on silica, i.e., fine tuning of the thickness of thin film using ALD can be beneficial for preparing high-performing adsorbents and oxidation catalysts of volatile organic compound. NiO/silica system prepared by ALD was used for catalysts of chemical conversion of CO2. Here, NiO nanoparticles are well dispersed on silica and confiend in the pore, showing high catalytic activity and stability at 800oC for CO2 reforming of methane reaction. We also used ALD for surface modulation of buffer layers of organic solar cell. TiO2 and ZnO thin films were deposited on wet-chemically prepared ZnO ripple structures, and thin films with mean thickness of ~2 nm showed highest power conversion efficiency of organic solar cell. Moreover, performance of ALD-prepared organic solar cells were shown to be more stable than those without ALD. Thin films of oxides deposited on ZnO ripple buffer layer could heal defect sites of ZnO, which can act as recombination center of electrons and holes.