• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.125-128
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• 2000

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.895-897
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• 2008

ZnO films were fabricated using rf-magnetron sputter deposition process with different $N_2$ ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing $N_2$ flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.39-39
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• 2010

The authors have an extensive study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks. In the photoluminescence (PL) spectra at 10 K, Zn-polar and O-polar faces show a common emission feature: neutral donor-bound excitons and their longitudinal-optical (LO) phonon replicas are strong, and free excitons are very weak. However, in the PL spectra at room temperature (RT), Zn-polar and O-polar faces show extremely different emission characteristics: the emission intensity of Zn-polar face is 30 times larger than that of O-polar face, and the band edge of Zn-polar face is 33 meV red-shifted from that of O-polar face. The temperature dependence of photoluminescence indicates that the PL spectra at RT are closely associated with free excitons and their phonon-assisted annihilation processes. As a result, it is found that the RT PL spectra of Zn-polar face is dominated by the first-order LO phonon replica of A free excitons, while that of O-polar face is determined by A free excitons. This is ascribed that Zn-polar face has larger exciton-phonon coupling strength than O-polar face.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.483-488
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• 2010

ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.788-791
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• 2008

ZnO nanoparticle was successfully prepared by microwave irradiation method in various oxygen/nitrogen ratio atmospheres. The product prepared in a low oxygen ratio atmosphere showed tetra pod shape with high aspect ratio, c/a. PL spectra of the products showed higher UV emission intensity than the others when it was prepared in the atmosphere oxygen/nitrogen=40/60.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.289.2-289.2
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• 2014

본 연구에서는 전기증착법 정전류 방법으로 ITO 유리기판 위에 ZnO 나노막대를 성장하였다. 성장 매개 변수로 용액 농도, 전착 전류, 용액 온도 및 성장 시간으로 하였고, 성장된 ZnO 나노막대는 field-emission scanning electron microscopy, X-ray diffractometer, photoluminescence를 이용하여 구조적, 광학적 특성을 분석하였다. 모든 시료에서 ZnO 나노막대는 wurtzite 형태의 결정 구조를 가지고, c-축 배향성을 나타내는 강한 ZnO(002) 회절피크가 나타났다. 용액 농도와 전착 전류가 감소함에 따라 ZnO 나노막대의 밀도 및 직경이 감소하였다. 또한, ZnO 나노막대는 성장 온도가 증가함에 따라 직경이 줄어들었고, 성장 시간이 증가함에 따라 ZnO 나노막대의 길이는 늘어났다. 모든 ZnO 나노막대 시료는 자유 엑시톤 재결합에 의해서 3.18 eV, 산소공공에 의한 결함에 의해서 2.32~1.86 eV의 피크가 관찰되었다. ZnO 나노막대의 직경이 작아질수록 NBEE 피크의 세기가 감소하고, 용액의 농도가 증가함에 따라 NBEE 피크는 청색편이 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.246-246
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• 2011

졸-겔 스핀코팅(sol-gel spin-coating)법을 이용하여 실리콘 기판에 ZnO 박막을 증착하였다. 증착된 졸 용액을 전열처리(pre-heat treatment) 후, 다른 속도로 상온까지 냉각시켰다. ZnO 박막의 특성 분석을 위하여 atomic force microscopy (AFM), X-ray diffraction (XRD), Raman, photoluminescence (PL)을 이용하였다. 전열처리 후 5$^{\circ}C$/min의 속도로 천천히 냉각시킨 ZnO 박막은 산맥구조(mountain chain structure)로 표면이 매우 거친 반면, 빠르게 냉각시킨 ZnO 박막은 매우 매끄러운 표면을 나타내었다. 빠르게 냉각시킨 ZnO 박막의 c-축 배향성(c-axis preferred orientation)이 느리게 냉각시킨 ZnO 박막의 배향성보다 더 우세하게 나타났고, 결정성도 우수하였다. 뿐만 아니라, 빠르게 냉각시킨 ZnO 박막의 광학적 특성이 느리게 냉각시킨 ZnO 박막의 특성보다 우수하게 나타났다. 후열처리(post-heat treatment)에 의해 ZnO 박막의 구조적 및 광학적 특성이 더욱 향상되었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.472-476
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• 2007

In this study, we investigated methods for p-type ZnO deposition as well as stability enhancement of its properties. The film was prepared by co-depositing AlAs and ZnO in a RF magnetron sputtering system. Property variation was monitored with photoluminescence and Hall measurements by stressing the films at $250^{\circ}C$ for various duration upto 144 hours. Results indicated that co-deposition is a useful method for p-type ZnO preparation. In particular, pre-treatment in 30% $H_2O_2$ for 1min was observed to be effective in reducing the property variation taking place during the subsequent high temperature processes.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.245-250
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• 2005

ZnO was deposited on sapphire single crystal substrate by an ultrasonic pyrolysis of Zinc Acetate Dehydrate (ZAH) with carrying Ar gas. Through Thermogravimetry-Differential Scanning Calorimetry(TG-DSC), zinc acetate dihydrate was identified to be dissolved into ZnO above $380^{\circ}C$. ZnO deposited at $380-700^{\circ}C$ showed polycrystalline structures with ZnO (101) and ZnO (002) diffraction peaks like bulk ZnO in XRD, and from which c-axis strain ${\Sigma}Z=0.2\%$ and compressive biaxial stress$\sigma=-0.907\;GPa$ was obtained for the ZnO deposited $400^{\circ}C$. Scanning electron microscope revealed that microstructures of the ZnO were dependent on the deposition temperature. ZnO grown below temperature $600^{\circ}C$ were aggregate consisting of zinc acetate and ZnO particles shaped with nanoblades. On the other hand the grain of the ZnO deposited at $700^{\circ}C$ showed a distorted hexagonal shape and was composed of many ultrafine ZnO powers of 10-25 nm in size. The formation of these ulrafine nm scale ZnO powers was explained by the model of random nucleation mechanism. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement.