• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.462-468
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• 2010

A low power gas sensor with microheater was fabricated by MEMS technology. In order to heat up the gas sensing material to a operating temperature, a platinum(Pt) micro heater was built on to the micromachined Si substrate. The width and gap of microheater were $20\;{\mu}m$ and $4.5\;{\mu}m$, respectively. ZnO nanowhisker arrays were fabricated on a sensor device by hydrothermal method. The sensor device was deposited with ZnO seeds using PLD systems. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growthing ZnO nanowhiskers. The power consumption to heat up the gas sensor to a operating temperature was measured and temperature distribution of sensor was analyzed by a Infrared Thermal Camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high(64 %) sensitivity was obtained even at as low as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$ and was only 25 mW at $150^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.106-109
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• 2012

A low power methane gas sensor with microheater was fabricated by silicon bulk micromachining technology. In order to heat up the sensing layer to operating temperature, a platinum (Pt) micro heater was embedded in the gas sensor. The line width and gap of the microheater was 20 ${\mu}m$ and 4.5 ${\mu}m$, respectively. Zinc oxide (ZnO) nanowhisker arrays were grown on a sensor from a ZnO seed layer using a hydrothermal method. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growing ZnO nanowhiskers. Temperature distribution of the sensor was analyzed by infrared thermal camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high (64%) sensitivity was obtained even at as low a temperature as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$, and only 25 mW at $150^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.313-313
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• 2011

최근, 산화물 반도체를 통한 나노선 연구가 활발히 진행되고 있다. 1차원 나노선은 넓은 표면적을 가지며 다양한 특성을 지녀 미래 nanodevice로의 중요한 building block 소자로의 활용이 가능하다. 본 연구에서는 이종의 나노선을 합성하여 hierarchical nanojunction structure를 제작, 특성을 확인하였다. 이러한 구조는 나노선이 가지는 넓은 표면적의 특성과 동시에, multi-component fuctional nanodevice를 구현하는데에 적합한 구조이다. 본 연구는 텅스텐 기판 위에 고온의 열증착 방식을 이용하여 텅스텐 산화물 나노선을 제작시켜 그 위에 저온의 수열합성을 통한 산화아연 나노선을 제작한 후 향상된 field emission emitter로서의 특성을 살펴보았다. 합성된 텅스텐 산화물 나노선은 quasi-allign된 구조를 가지며, 이러한 구조 위에 ZnO를 스퍼터링하여 seed layer를 형성시키고, 암모니아수와 아연염을 이용한 수열합성법을 통하여 합성된 나노선 위에 nanobranch의 산화아연 나노선을 형성하였다. 이러한 성장특성은 SEM, TEM을 통하여 확인하였고 각각의 특성과 계면을 살펴보았다. 또한 이러한 구조를 이용하여 전계방출특성을 확인하였는데, 약 5.7 eV의 일함수를 갖는 텅스텐 산화물 나노선 위에 더 작은 값의 일함수를 갖는 산화아연 나노선을 합성하여 전계방출특성을 보았으며, 더 향상된 결과를 얻을 수 있었다. 또한 산화아연의 합성방법에 따른 전계방출 특성의 차이도 비교하였다.