• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.141.1-141.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2442-2451
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• 2018

Novel highly active visible-light photocatalysts in the form of zinc bismuth oxide ($ZnBi_2O_4$) and graphite hybrid composites were prepared by coupling via a co-precipitation method followed by calcination at $450^{\circ}C$. The asprepared $ZnBi_2O_4$-graphite hybrid composites were tested for the degradation of rhodamine B (RhB) solutions under visible-light irradiation. The existence of strong electronic coupling between the two components within the $ZnBi_2O_4$-graphite heterostructure suppressed the photogenerated recombination of electrons and holes to a remarkable extent. The prepared composite exhibited excellent photocatalytic activity, leading to more than 93% of RhB degradation at an initial concentration of $50mg{\cdot}L^{-1}$ with 1.0 g catalyst per liter in 150 min. The excellent visible-light photocatalytic mineralization of $ZnBi_2O_4-1.0graphite$ in comparison with pristine $ZnBi_2O_4$ could be attributed to synergetic effects, charge transfer between $ZnBi_2O_4$ and graphite, and the separation efficiency of the photogenerated electrons and holes. The photo-induced $h^+$ and the superoxide anion were the major active species responsible for the photodegradation process. The results demonstrate the feasibility of $ZnBi_2O_4-1.0graphite$ as a potential heterogeneous photocatalyst for environmental remediation.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.307-316
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• 2014

Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.277-277
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• 2010

We present facile chemical route stabilizing dispersion of carboxylated single-Walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/$TiO_2$/ZnO as enhanced by therml treatment, and the thermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.41-41
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• 2010

We present facile chemical route stabilizing dispersion of carboxylated single-walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/$TiO_2$/ZnO as enhanced by therml treatment, and thethermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.251-251
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• 2010

Organic-inorganic hybrid materials have attracted because of its combined properties, such as flexibility and high electrical performance. In addition, the hybrid materials are expected to have synergic effect which are not shown in just one component. Here, we fabricated organic-inorganic hybrid thin film. Organic-inorganic hybrid thin film have been deposited from diethyl zinc and 1, 2, 4-trihydroxybenzene (THB) by molecular layer deposition (MLD). UV-VIS, Using Infrared spectrum and X-ray photoelectron spectroscopy confirm that Zinc and THB hybrid film (ZnTHB) consist of Zn-O and THB - oxide units and the micro structure and composition of hybrid film. hat the sequential surface reactions of diethyl zinc and ethylene glycol are sufficiently self-limiting and saturating to enable well-controlled MLD growth. Transmission electron microscopy image shows lamination growth of ZnTHB film according to cycle.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.566-572
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• 2007

Two hybrid catalysts for the direct synthesis of DME were prepared and the catalytic activity of these catalysts were investigated. The hybrid catalyst for the direct synthesis of DME was composed as the catalytic active components of methanol synthesis and dehydration. The methanol synthesis catalyst was formed from the precursor contained Cu and Zn, the methanol dehydration catalyst was used ${\gamma}-Al_2O_3$. As PM-CZ+D and CP-CZA/D, Two hybrid catalysts were prepared by physical mixing method (PM-CZ+D) and precipitation method (CP-CZA/D), respectively. PM-CZ+D was prepared by physically mixing methanol synthesis catalyst and methanol dehydration catalyst, CP-CZA/D was prepared by depositing Cu-Zn or Cu-Zn-Al components on ${\gamma}-Al_2O_3$. The crystallinity and the surface morphology of synthesized catalyst were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM) to investigate the physical property of prepared catalyst. And BET surface area by $N_2$ adsorption and the surface area of Cu by $N_2O$ chemisorption were investigated about the hybrid catalysts. In addition, catalytic activity of these hybrid catalysts was examined with varying reaction conditions. At that time, the reaction temperature of $250{\sim}290^{\circ}C$, the reaction pressure of 50~70 atm, the $[H_2]/[CO]$ mole ratio of 0.5~2.0 and the space velocity of $1,500{\sim}6,000h^{-1}$ were investigated the catalytic activity. From these results, it was confirmed that the reactivity of CP-CZA/D was higher than that of PM-CZ+D. When the conditions of reaction temperature, pressure, $[H_2]/[CO]$ ratio and space velocity were $260^{\circ}C$, 50 atm and 1.0, $3,000h^{-1}$ respectively, CO conversion using CP-CZA/D hybrid catalyst was 72% and the CO conversion of CP-CZA/D was more than 20% compared with the CO conversion of PM-CZ+D. It was known that Cu surface area of CP-CZA/D hybrid catalyst was higher than that of hybrid PM-CZ+D catalyst using $N_2O$ chemisorption. It was assumed that the catalytic activity was improved because Cu particle of hybrid catalyst prepared by precipitation method was well dispersed.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.209-212
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. The advantage of thick-film technology include the possibility of mass-production and automation, that of integrating the sensing element in a hybrid circuit and that of fuctional trimming of the sensor and/or the circuit. which would enable really interchangeable transducers to be prepared. In this paper, we made ZnO and $SnO_2$ gas sensors and investigated the sensitivity to CO gas. Therefore, we compared a ZnO gas sensor with a $SnO_2$ gas sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.145.1-145.1
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• 2013

A prerequisite for the development of graphene-based field effect transistors (FETs) is reliable control of the type and concentration of carriers in graphene. These parameters can be manipulated via the deposition of atoms, molecules, and polymers onto graphene as a result of charge transfer that takes place between the graphene and adsorbates. In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.