• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• 한국재료학회지
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• 제21권6호
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.280.2-280.2
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• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.25-26
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• 2009

We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.58-58
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• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.112-113
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• 2007

ZnS:Cn,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$ -doping concentration has been investigated on the luminescence characteristics of ZnS:Cn,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cn,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

• Composites Research
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• 제29권4호
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• pp.132-137
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• 2016

Based on mussel-inspired polydopamine (PDA), a novel technique to fabricate carbon nanowire (CNW) arrays is presented for a possible use of porous carbon electrode in electrochemical energy storage applications. PDA can give more porosity and nitrogen-doping effect to carbon electrodes, since it has high graphitic carbon yield characteristic and rich amine functionalities. Using such outstanding properties, the applicability of PDA for electrochemical energy storage devices was investigated. To achieve this, the decoration of the CNW arrays on carbon fiber surface was performed to increase the surface area for storage of electrical charge and the chemical active sites. Here, zinc oxide (ZnO) nanowire (NW) arrays were hydrothermally grown on the carbon fiber surface and then, PDA was coated on ZnO NWs. Finally, high temperature annealing was performed to carbonize PDA coating layers. For higher energy density, manganese oxide ($MnO_x$) nanoparticles (NPs), were deposited on the carbonized PDA NW arrays. The enlarged surface area induced by carbon nanowire arrays led to a 4.7-fold enhancement in areal capacitance compared to that of bare carbon fibers. The capacitance of nanowire-decorated electrodes reached up to $105.7mF/cm^2$, which is 59 times higher than that of pristine carbon fibers.

• 한국재료학회지
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• 제11권3호
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• pp.197-202
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• 2001

교류구동형 플라즈마 표시소자의 보호막으로 사용되는 MgO의 특성향상을 위하여 기존의 MgO에 양이온이 등전적으로 치환될 수 있는 ZnO를 소량 첨가하여 고주파 마그네트론 스퍼터링 방법으로 $Mg_{1-x}$Z $n_{x}$O박막을 성장시키고 박막의 전기적, 광학적 특성을 조사하였다. ZnO농도가 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 PDP 테스트 판넬을 제작하고 ZnO의 첨가가 소자의 방전전압과 메모리 이득에 미치는 영향을 살펴보았다. ZnO농도가 0at%, 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막의 광투과율은 ZnO 첨가에 따라 변화를 보이지 않으나 유전상수는 다소 증가하는 경향을 보였다. ZnO의 농도가 0.5 at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 PDP 소자의 방전개시전압과 방전유지 전압이 MgO 박막을 보호막으로 갖는 소자에 비해 20V까지 낮아졌고, 결과적으로 메모리계수는 다소 증가하였다. ZnO농도가 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 소자에서 ZHO의 첨가에 비례하여 방전세기 (플라즈마 밀도)가 증가하였다.도)가 증가하였다.도)가 증가하였다.