• Advances in nano research
• /
• 제5권3호
• /
• pp.193-201
• /
• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2007년도 추계학술대회 논문집
• /
• pp.75-76
• /
• 2007

ZnS:Cu,Cl phosphor was coated by solid-gel reaction with $SiO_2$ outside layer. The effect of $Cu^{2+}$-doping concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electro luminescent device. Also, SiO2 coated layers' effect on luminescence characteristics. Evaluation of luminescence characteristics dependent on the synthesis conditions is important to get high-performance phosphors properties. EL and PL properties such as luminescence intensity and chromaticity of ZnS:Cu,Cl phosphors synthesized with different concentration of activator, $Cu^{2+}$, were analysed separately

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.175-178
• /
• 1997

• 한국전기전자재료학회논문지
• /
• 제30권12호
• /
• pp.794-799
• /
• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• 한국재료학회지
• /
• 제13권8호
• /
• pp.503-508
• /
• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• 한국전기전자재료학회논문지
• /
• 제24권8호
• /
• pp.632-635
• /
• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• 한국전기전자재료학회논문지
• /
• 제24권12호
• /
• pp.962-968
• /
• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• 한국결정성장학회지
• /
• 제28권5호
• /
• pp.222-227
• /
• 2018

$Zn_{1-x}Co_x$ Zeolitic Imidazolate Framework-8(ZIF)(x = 0~0.05)를 2-methylimidazole을 사용하여 $Zn^{2+}$와 $Co^{2+}$를 공침시켜 합성하고, 이를 $600^{\circ}C$에서 2시간 열처리하여 순수한 ZnO 나노입자와 Co가 도핑된 ZnO 나노입자를 합성했다. x가 < 0.05일 경우, 2-methylimidazole 링커가 $Zn^{2+}$ 및 $Co^{2+}$ 모두에 강하게 배향되어 균질한 Zn/Co ZIFs가 합성되었으며, 열처리를 통해 Co가 균일하게 도핑된 ZnO를 합성할 수 있었다. 반면, $x{\geq}0.05$일 때는 불균질한 Zn/Co ZIFs가 합성되었으며, 열처리 이후 $Co_3O_4$ 이차상이 형성되었다. 합성된 나노입자들에 대한 가스감응특성 평가 결과, 3 at%의 Co가 도핑된 ZnO 센서는 순수한 ZnO와는 달리 trimethylamine에 대해 고감도, 고선택적 가스감응특성을 나타냈다. 본 연구의 bimetallic ZIF 유도 산화물 나노복합체 합성방법은 고성능 가스센서를 설계하는데 활용될 수 있을 것으로 기대된다.

• 한국표면공학회지
• /
• 제40권3호
• /
• pp.107-112
• /
• 2007

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.

• 한국결정성장학회지
• /
• 제18권1호
• /
• pp.50-55
• /
• 2008

졸-겔 공정을 이용하여 유리기판 위에 Al-doped ZnO(AZO) 박막을 제조하였고, AZO 박막의 특성에 대하여 Al 전구체 종류 및 post-annealing 온도가 미치는 영향에 대하여 고찰하였다. AZO 박막 제조용 졸은 zinc acetate, EtOH, MEA 등을 사용하여 제조하였고, Al doping 을 위한 전구체로는 aluminum nitrate 와 aluminum chloride 를 사용하였다. Sol 내의 Zn 농도는 0.5 mol/l 로 하였고, Al doping 양은 Zn 대비 1 at%로 고정하였다. 유리기판 위에 졸을 spin-coating 한 후 $550^{\circ}C$에서 2 시간 동안 열처리한 후, $N_2$와 $H_2$의 비가 9 : 1인 환원 분위기 내에서 $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$인 온도에서 2시간 동안 post-annealing을 진행하였다. 제조된 AZO 박막의 구조적, 전기적, 광학적 특성은 XRD, FE-SEM, AFM, Hall effect measurement system 및 UV-Visible spectroscopy를 이용하여 분석하였다. Al 전구체로서 aluminum nitrate 를 사용한 경우가 aluminum chloride 를 사용하여 제조한 AZO 박막보다 우수한 광학적, 전기적 특성을 나타내었으며, post-annealing 온도가 증가함에 따라 비저항과 투과율은 감소하였다. $500^{\circ}C$에서 post-annealing한 AZO 박막의 전기비저항 값은 $2{\times}10^{-3}{\Omega}{\cdot}cm$이었고, 투과율은 $300^{\circ}C$에서 91%로 가장 높게 나타났다.