• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1283-1291
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• 1995

The electrical conductivity, flammable gas response and their humidity effect of porous ZnO, added with 5wt% corn starch as the fugitive phase, were examined. Porous ZnO showed different conductivity curves during increasing and decreasing temperature, and its electrical conductivity decreased rapidly by desorption of OH- between 20$0^{\circ}C$ and 35$0^{\circ}C$ when the temperature increased in dry air. The CO gas sensitivity of starchadded ZnO samples was higher than that of ZnO without starch addition. The sensitivity of porous, starchadded ZnO to 200ppm CO gas was much less in humid atmosphere than in dry atmosphere since water vapor increased the conductivity of porous ZnO in air, but decreased the conductivity in CO. Maximum sensitivity to 200 ppm CO gas balanced by air was about 100 in dry atmosphere and about 15 in RH 23% atmosphere.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.167-183
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• 2017

Zinc oxide (ZnO) is one of the most versatile semiconductors, and one-dimensional (1D) ZnO nanostructures have attracted significant interest for use in ultraviolet (UV) lasers, photochemical sensors, and photocatalysts, among other applications. It is known that 1D ZnO nanowires can be fabricated readily owing to the anisotropic growth of ZnO along the [0001] direction. However, this type of growth results in a decrease in the surface area of the (0001) plane, which plays a vital role not only in UV lasing but also in the photocatalytic process. Thus, we attempted to synthesize ZnO crystals with an increased polar surface area by controlling the crystal growth process. The purpose of this review is to propose a simple route for the synthesis of plate-like ZnO crystals with highly enhanced polar surfaces and to explore their feasibility for use in UV lasers as well as as a photocatalyst and antibacterial agent. In addition, we highlight the recent progress made in the pilot-scale synthesis of plate-like ZnO crystals for industrial applications.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.78-82
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• 2023

Metal oxide semiconductor (MOS) adapting spray-pyrolysis deposition technique has drawn large attention based on their high quality of intrinsic and electrical properties in addition to simple and low-cost processibility. To fully utilize the merits of MOS field-effect transistors (FETs) , transparency, it is important to understand the instability behaviors of FETs under illumination. Here, we studied the photo-induced properties of nc-ZnO/ZnO field-effect transistors (FETs) based on spray-pyrolysis under illumination which incorporating ZnO nanocrystalline nanoparticles into typical ZnO precursor. Our experiments reveal that nc-ZnO in active layer suppressed the light instabilities of FETs.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.

• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.68-69
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.258-266
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• 1989

The effects of grain size and dopant ZnO on the photoelectrochemical conversion in TiO2 ceramic electrodes have been investigated. The photocurrent increases with increasing grain size in the undoped TiO2 ceramic electrode. In ZnO-doped TiO2 electrodes, the photocurrent decreases with increasing ZnO up to 0.4 wt% due to decrease of donor concentration, and then with further addition of ZnO, photocurrent increases according to the formation of second phase. However, the photoresponse appears at wavelength of 420nm, which is very close to the energy band gap of TiO2, regardless of grain size and amount of ZnO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.131-137
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• 2005

This paper describes a new approach to the algorithm and fundamental characteristics of the device for monitoring the leakage currents flowing through zinc oxide (ZnO) surge arresters. In order to obtain a technique for a new on-line monitoring device that can be used in the deterioration diagnosis of ZnO surge arresters, the new algorithm and on-line leakage current detection device for extracting the resistive and capacitive currents using the phase shift addition method were proposed. The computer-based on-line monitoring device can sense accurately the power frequency leakage currents flowing through ZnO surge arresters. The on-line leakage current monitoring device of ZnO surge arresters proposed in this work has the high sensitivity compared to the third harmonic leakage current detection devices. As a consequence, it was found that the proposed leakage current monitoring device would be useful for forecasting the defects and degradation of ZnO surge arresters.