• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.140-142
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• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.384-389
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• 2009

ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.955-961
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• 1993

Sintering behavior and microstructure development in the system ZnO-Bi2O3-CoO-Zn7Sb2O12 with Zn7Sb2O12 content(0.1mol%~2mol%) were studied. The pyrochlore phase was formed by the reaction of the Zn7Sb2O12 with Bi2O3 phase during heating (below 90$0^{\circ}C$). The formation temperature of the liquid phase (Bi2O3) was dependent on the Zn7Sb2O12 contents (about 74$0^{\circ}C$ for Bi2O3/Zn7Sb2O12>1 by the eutectic melting in the ZnOBi2O3 system, and about 110$0^{\circ}C$ for Bi2O3/Zn7Sb2O12 1 by the decomposition of pyrochlore phase). Hence, sintering behavior and microstructure development were determined virtually by the Bi2O3/Zn7Sb2O12 ratio, which were promoted by liquid (Bi2O3) phase and retarded by the pyrochlore (or spinel) phase. The grain growth of ZnO during sintering was sluggish with increasing Zn7Sb2O12 contents.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.356-361
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• 2015

$Cd_{0.5}Zn_{0.5}S/ZnO$ composite photocatalysts were synthesized using the precipitation method and characterized by XRD, UV-vis DRS, PL and FE-SEM. Photocatalytic activities of the materials were evaluated by measuring the degradation of rhodamine B under visible light irradiation. Contrary to ZnO, $Cd_{0.5}Zn_{0.5}S/ZnO$ materials absorb visible light as well as UV and their absorption intensities in visible region increased with increasing the $Cd_{0.5}Zn_{0.5}S$ amount. The increment in the $Cd_{0.5}Zn_{0.5}S$ content in $Cd_{0.5}Zn_{0.5}S/ZnO$ also leads to reducing the particle size and consequently increasing the specific surface area. $Cd_{0.5}Zn_{0.5}S/ZnO$ materials with the larger $Cd_{0.5}Zn_{0.5}S$ content showed the higher activity in the photocatalytic degradation of rhodamine B under visible light irradiation. Therefore, the heterojunction effect between $Cd_{0.5}Zn_{0.5}S$ and ZnO as well as the adsorption capacity seems to give important contributions to the photocatalytic activity of the $Cd_{0.5}Zn_{0.5}S/ZnO$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.155-159
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• 2008

In this work, we report synthesis of free-standing ZnO/Zn core-shell micro-polyhedrons using metal Zn pellets as a source material by the thermal chemical vapor deposition process. Scanning and transmission electron microscopy measurements were introduced to investigate morphologies and structural properties of as-grown ZnO/Zn core-shell micro-polyhedrons. It was found that micro-polyhedrons were composed of inner single-crystalline metal Zn surrounded by single-crystalline ZnO nanorod arrays. The inner single crystalline metal Zn with micro-scale diameter has a hexagonal crystal structure. Diameter and height of ZnO nanorods covering the metal Zn surface are below 10 nm and 100 nm, respectively. It was also confirmed that c-axis oriented ZnO nanorods are single crystalline with a hexagonal crystal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.1-5
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• 2000

Cathodoluminescence(CL) properties of ZnO:Zn green phosphor were investigated. ZnO:Zn phosphor was synthesized by varying reducing agents and firing temperatures. ZnS, charcoal and 5% H2 gas mixed with 95% N2 gas(5H2-95N2) were used as the reducing agent and atmosphere. The highest CL intensity of ZnO:Zn phosphor was observed under the condition of 5H2-95N2 atmosphere and firing temperature of 90$0^{\circ}C$ for 1h. Charocal and ZnO as reducing agents in the syntehsis of ZnO:Zn phosphor exhibited about 60% and 40%, respectively, of the CL intensity obtained with 5H2-95N2 atmosphere.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.385-390
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• 2010

We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.224-227
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• 2001

ZnO buffer layers were used to grow ZnO films on c-plane sapphire substrates. The role of ZnO buffer layers in the growth of ZnO thin films on sapphire substrates was investigated by scanning electron microscopy, X-ray diffraction, and Photolumminescence(PL) measurements. At the optimized ZnO buffer layer thickness of 100 $\AA$, FWHM of $\theta$ -rocking curve of ZnO thin films was minimized to 0.73 degrees and room temperature PL spectra showed that deep level emission was not hardly seen. The optimization of the ZnO buffer layer thickness resulted in improvements of the surface morphology and crystalline quality of ZnO thin films.