• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.338.2-338.2
• /
• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.12a
• /
• pp.191-191
• /
• 2011

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.17-19
• /
• 1991

Pastes consisting of $CdZnS_{1-y}Te_{y}$ powder, 20wt/o of $CdCl_2$as a sintering aid and appropriate amount of Propylene Glycol(P.G) have been coated on glass substrates and were sintered at the temperature of $625^{\circ}C$ to find energy band gap, transmittance and electrical properties of the sintered films. The resistivity of sintered film increases with increasing Te content. X-ray diffraction patterns show that $CdZnS_{0.9}Te_{0.1}$ sintered film is in the single film in the two phase region. The transmittance of the sintered film decreases with increasing the Te content.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.35.1-35.1
• /
• 2009

Vertically aligned zinc oxide (ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate. The films thus prepared were characterized by measuring X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) studies. To study the effect of surface morphology on wettability, the contact angle (CA) of water was measured. It was demonstrated that the CA of the deposited ZnO NRs varied between $104^{\circ}$ and $135^{\circ}$ depending upon the surface morphology. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays.

• Korean Journal of Materials Research
• /
• v.18 no.7
• /
• pp.379-383
• /
• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.171-171
• /
• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• Journal of Magnetics
• /
• v.10 no.3
• /
• pp.95-98
• /
• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• Journal of the Korean Solar Energy Society
• /
• v.39 no.1
• /
• pp.33-40
• /
• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.127-127
• /
• 2009

The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN, $SiO_2$, a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.50.1-50.1
• /
• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).