• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.539-542
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions at the calcine temperature of $700^{\circ}C$ and sintering temperature of $1300^{\circ}C$ in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on Si(100) substrate and prepared $ZnGa_2O_4$ phosphor thin film is annealed by rapid thermal processor(RTP) at $700^{\circ}C$, 15sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodoluminescenre(CL) spectrums of $ZnGa_2O_4$ phosphor thin film show main peak of 420nm and maximum intensity at the substrate temperature of $500^{\circ}C$ and annealing temperature of $700^{\circ}C$ 15sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.749-753
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• 2006

The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{\mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{\circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.432-436
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• 2006

The $ZnGa_2O_4$ and Mn, Cr-doped $ZnGa_2O_4$ Phosphors were synthesized through conventional solid state reactions. The XRD patterns show that the $ZnGa_2O_4$ has a (3 1 1) main peak and a spinel phase. The emission wavelength of $ZnGa_2O_4$ showed main peak of 420 nm and maximum intensity at the sintering temperature of $1100^{\circ}C$. In the crystalline $ZnGa_2O_4$, the Mn shows green emission (510 nm, $^4T_1-^6A_1$) with a quenching concentration of 0.6 mol%, and the Cr shows red emission (705 nm, $^4T_2-^4A_2$) with a quenching concentration of 2 mol%. These results indicate that $ZnGa_2O_4$ Phosphors hold promise for potential applications in field emission display devices with high brightness operating in full color regions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.14-17
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• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.310-310
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• 2014

ZnO박막은 넓은 밴드갭 (3.37 eV), 높은 여기 결합 에너지 (60 meV)를 가지는 육방정계 우르자이트(hexagonal wurtzite) 결정구조를 가지는 II-VI족 화합물 반도체로, 가시광선 영역에서의 높은 광학적 투과도 특성과 자외선 파장에서 발광이 가능한 장점을 가진다. 최근, ZnO박막 성장 기술이 상당히 발전하였지만, 아직까지도 p-형 ZnO박막 성장 기술은 충분히 발전하지 못하여 ZnO의 동종접합 LED는 아직 상용화되지 않고 있는 실정이다. 따라서, 많은 연구 그룹에서 p-GaN, p-SiC, p-diamond, p-Si 등과 같은 p-type 물질 위에 n-type ZnO를 성장시킨 이종접합 다이오드가 연구되고 있다. 특히, p-GaN의 경우 ZnO와의 격자 불일치 정도가 1.8 % 정도로 작다는 장점이 있어 많은 연구가 이루어 지고 있다. 일반적으로 c-축을 기반으로 한 극성ZnO 발광다이오드에서는 자발 분극과 압전 분극 현상에 의해 밴드 휨 현상이 발생하고, 이로 인해 전자와 정공의 공간적 분리가 발생하게 되어 발광 재결합 효율이 제한되고 있다는 문제가 발생한다. 따라서, 본 연구에서는 극성 (0001) 및 비극성 (10-10) n-ZnO/p-GaN 발광다이오드의 성장 및 발광 소자의 전기 및 광학적 특성에 대한 비교 연구를 진행하였다. 금속유기 화학증착법을 이용하여 c-면과 m-면 위에 각각 극성 (0001) 및 반극성 (11-22) GaN박막을 $2.0{\mu}m$ 성장시킨 후 Mg 도핑을 한 p-GaN을 $0.4{\mu}m$ 성장시켜 각각 극성 (0001) 및 반극성 (11-22) p-GaN템플릿을 준비하였다. 이후, N2분위기 $700^{\circ}C$에서 3분동안 열처리를 통하여 Mg 도펀트를 활성화시킨 후 원자층 증착법을 이용하여 동시에 극성 및 반극성 p-GaN의 위에 n-ZnO를 $0.11{\mu}m$ 성장시켜 이종접합구조의 발광소자를 형성하였다. 이때, 극성 (0001) p-GaN 위에는 극성의 n-ZnO 박막이 성장되는 반면, 반극성 (11-22) p-GaN 위에는 비극성 (10-10) n-ZnO 박막이 성장됨을 HR-XRD로 확인하였다. 극성 (0001) n-ZnO/p-GaN이종접합 발광다이오드의 전계 발광 스펙트럼에서는 430 nm 와 550 nm의 두 피크가 동시에 관찰되었다. 430 nm 대역의 파장은 p-GaN의 깊은 준위에서 발광하는 것으로 판단되며, 550 nm 피크 영역은 ZnO의 깊은 준위에서 발광되는 것으로 판단된다. 특히, 10 mA 이하의 저전류 주입시 550 nm의 피크는 430 nm 영역보다 더 큰 발광세기를 나타내고 있다. 하지만, 10 mA 이상의 전류주입 하에서는 550 nm의 영역보다 430 nm의 발광세기가 더욱 증가하는 것을 확인할 수 있었다. 이것은 ZnO의 밴드갭이 3.37 eV로 GaN의 밴드갭인 3.4 eV다 작기 때문에 우선적으로 ZnO의 깊은 준위에서 발광하는 550 nm가 더욱 우세하지만, 지속적으로 전류주입 증가에 따른 캐리어 증가시 n-ZnO에서 p-GaN로 전자가 넘어가며 p-GaN의 깊은 준위인 430 nm에서의 피크가 우세해지는 것으로 판단된다. 반면에, 비극성 (10-10) n-ZnO/반극성 (11-22) p-GaN 구조의 이종접합 발광다이오드로 전계 발광 스펙트럼에서는 극성 (0001) n-ZnO/p-GaN에 비하여 매우 낮은 전계 발광 세기를 나타내고 있다. 이는, 극성 n-ZnO/p-GaN에 비하여 비극성 n-ZnO/반극성 p-GaN의 결정성이 상대적으로 낮기 때문으로 판단된다. 또한, 20 mA 영역에서도 510 nm의 깊은 준위와 430 nm의 발광이 관찰되었다. 동일한 20 mA하에서 두 피크의 발광세기를 비교하면 430 nm의 영역은 극성 n-ZnO/p-GaN에 비하여 매우 낮은 값을 나타내고 있다. 이는 반극성 (11-22) p-GaN의 경우 극성 (0001) p-GaN에 비하여 우수한 p-형 특성에 기인한 것으로 판단된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.109-114
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• 2016

Monodispersed $ZnGa_2O_4$ microspheres were synthesized by a facile two-step process consisting of a solvothermal method and calcination process. The prepared monodispersed $ZnGa_2O_4$ microspheres were aggregated into 3D microstructures by self-assembly with a large number of small $ZnGa_2O_4$ particles generated in nucleation. This nucleation and self-assembly making hierarchical microstructures were depended on the concentration of PEG (polyethylene glycol) due to CAC (critical aggregation concentration) theory. And also we controlled the amount of zinc acetate to make pure $ZnGa_2O_4$ phase. Additionally, to fix the optimized calcination condition, sample was characterized by TG-DTA to prove the thermal property in the calcination process and by FT-IR to identify the changes of functional group bonding between each element of the $ZnGa_2O_4$ precursor and oxide calcined at $900^{\circ}C$ for 1 h.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1040-1046
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• 1996

Low voltage phosphor, ZnGa$_{2}$O$_{4}$:Mn, was synthesized and sintered at the high temperature in Ar or vacuum. By XRD analysis, it is confirmed that poly crystalline ZnGa$_{2}$O$_{4}$:Mn solid solution was formed. From EPMA analysis of the samples prepared in Ar and vacuum, the change of oxygen content was investigated and as a result, it was observed that the oxygen amounts were reduced in ZnGa$_{2}$O$_{4}$:Mn prepared in vacuum. It caused the deficiency in oxygen amounts in the phosphor and then consequently, it results in the formation of the energy level near 513 nm. It contributes to the improvement of the brightness of ZnGa$_{2}$O$_{4}$:Mn.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.158-162
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• 2009

$Zn_2SiO_4$:Mn green phosphors doped with Ga for PDP were synthesized by solid state reaction method. Photoluminescence measurements showed a new emission peak at around 600 nm for $Zn_2SiO_4$:Mn phosphors doped with Ga. Also, the luminescent color with doping $Ga^{3+}$ in the $Zn_2SiO_4$:Mn phosphors changed to green from yellowish green. Consequently, the new peak and charge of the luminescent color in the $Zn_2SiO_4$:Mn, Ga phosphors were attributed to $^2E{\rightarrow}^6A_2$ transition of $Mn^{4+}$.