• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.154-159
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• 2005

Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as $4.1\times10^{-3}{\Omega}.cm$. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about $\~ 90\%$ at visible light spectra (400-700nm).

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.60.1-60
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.82-83
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• 2008

AI doped ZnO (AZO) films, and intentionally Zn added AZO (ZAZO) films were prepared on Corning glass by rf magnetron sputtering, and the electrical, optical, and structural properties of the as-deposited films together with the air annealed films were investigated. The resistivity of the AZO films increased with increasing substrate temperature and having minimum resistivity at $150^{\circ}C$. At the high temperature, the ZAZO films showed improved electrical properties better than the AZO films due.to increase in both the carrier concentration and.the Hall mobility. Upon air annealing at $500^{\circ}C$, the resistivity of both AZO and ZAZO films increased substantially, but the relative amount of degradation was smaller for films deposited at $450^{\circ}C$ than the films deposited at $150^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.139.2-139.2
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• 2007

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.50-55
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• 2008

AI-doped ZnO(AZO) thin films have been fabricated on glass substrate by sol-gel method, and the effect of Al precursors and post-annealing temperature on the characteristics of AZO thin films was investigated. The sol was prepared with zinc acetate, EtOH, MEA and Al precursors. In order to dope Al in ZnO, two types of aluminum nitrate and aluminum chloride were used as Al precursor. Zinc concentration was 0.5 mol/l and the content of Al precursor was 1 at% of Zn in the sol. The sol was spin-coated on glass substrate, and the coated films were annealed at 550ue for 2 hand were post-annealed at temperature ranges of $300{\sim}500^{\circ}C$ for 2 h in reducing atmosphere ($N_2/H_2$= 9/1). Structural, electrical and optical propertis of the fabricated AZO thin films were analyzed by XRD, FE-SEM, AFM, hall effect measurement system and UV-visible spectroscopy. Optical and electrical properties of AZO thin films prepared with aluminum nitrate as Al precursor were better than those of films prepared with aluminum chloride. The electrical resistivity and the optical transmittance of films decreased with increasing post-annealing temperatures. The minimum electrical resistivity of $2{\times}10^{-3}$ and the maximum optical transmittance of 91% were obtained for the AZO thin films post-annealed at $550^{\circ}C\;and\;300^{\circ}C$, respectively.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.107-112
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• 2007

Aluminum doped zinc oxide (AZO) films were deposited on non-alkali glass substrate by DC magnetron sputtering with 3 types of AZO targets (doped with 1.0 wt%, 2.0 wt%, 3.0 wt% $Al_2O_3$). Electrical, optical properties and microstructure of AZO films have been investigated by Hall effect measurements, UV/VIS/NIR spectrophotometer, and XRD, respectively. Crystallinity of AZO films increased with increasing substrate temperature ($T_s$) and doping ratio of Al. Resistivity and optical transmittance in visible light were $8.8{\times}10^{-4}{\Omega}cm$ and above 85%, respectively, for the AZO film deposited using AZO target (doped with 3.0 wt% $Al_2O_3$) at $T_s$ of $300^{\circ}C$. On the other hand, transmittance of AZO films in near-infrared region decreased with increasing $T_s$ and doping ratio of Al, which could be attributed to the increase of carrier density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.40-40
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• 2010

Structural, electrical, and optical properties of atomic layer-controlled AI-doped ZnO (ZnO:Al) films grown on glass by atomic layer deposition (ALD) were characterized with various $Al_2O_3$ film contents for use as transparent electrodes. Unlike films made using sputtering methods, the diffraction peak position of the films grown by ALD based on alternate self-limiting surface chemical reactions moved progressively to a wider angle (red shift) with increasing $Al_2O_3$ film content, which seems to be evidence of Zn substitution in the film by layer-by-layer growth. By adjusting the $Al_2O_3$ film content, the electrical resistivity of ZnO:Al film with the $Al_2O_3$ film content of 2.96% reached the lowest electrical resistivity of $9.80{\times}10^{-4}\Omega{\cdot}cm$, in which the carrier mobility, carrier concentration, and optical transmittance were $11.20\;cm^2V^{-1}s^{-1}$, $5.69{\times}10^{20}\;cm^{-3}$, and 94.23%, respectively. Moreover, the estimated figure of merit value for the transparent conductive oxide applications from our best sample was $7.7\;m{\Omega}^{-1}$.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.67-68
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• 2006

We prepared the AZO thin film with different $O_2$ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1mTorr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of $8.5{\times}10^{-4}{\Omega}cm$ was exhibited in specific $O_2$ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific $O_2$ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1043.1-1048
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• 1996

알루미나 매트릭스 복합재료를 AIZnMg(7075)-합금의 직접적인 용융산화를 통하여 제조하였다. 충전재료는 17$\mu\textrm{m}$ 크기의 모서리가 둥근 연마재용 SiC 입자를 사용하였다. 산화촉진재 SiO2를 사용한 경우와 사용하지 않은 경우를 비교하였다. 매트릭스 형성 매카니즘과 반응거동을 온도와 SiO2사용량을 중심으로 연구하였으며, 얻어진 AI2O3/SiC/금속 복합재료의 미세구조를 관찰하였다.

• Journal of the Korean Ceramic Society
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• v.12 no.1
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• pp.23-28
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• 1975

The object of this study is to find the optimum conditions for crystal growth and kinds of crystal in ZnO-Al2O3-SiO2 glass composition. At first, the base glass composed of ZnO (44.7%), Al2O3(14.0%) and SiO2(41.3%) was melted in propane gas furnace at 1450-150$0^{\circ}C$ for an hour, and then it was poured into the stainless steel mould heated previously at $600^{\circ}C$ to obtain the thin glass test piece. Four crystal forms from base glass such as stuffed keatite, zinc orthosilicate, zinc aluminosilicate, and cristobalite were crystallized during heat treatment between 80$0^{\circ}C$ and 110$0^{\circ}C$. For the investigation of crystal growth, X-ray diffractometer and thermal differential analysis were used and the growth rate of the four crystal forms were obtained by the method of Archimedes specific gravity and intensity comparison of X-ray diffraction peak. The results obtained were as follows. 1) Stuffed keatite peaks which started to appear after two hours at 80$0^{\circ}C$ were maximum after 11 hours and this crystal breaks down to willemite irreversibly at about 100$0^{\circ}C$. 2) Development of gahnite started at 85$0^{\circ}C$ and increased with temperature growth. 3) Stuffed keatite which had been transformed slowly into willemite at 100$0^{\circ}C$ was decreased with time and willemite increased until four hours. 4) Cristobalite began to be developed after treatment of 110$0^{\circ}C$.