• Title/Summary/Keyword: ZnO/Si

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Fabrication and characterization of $ZnGa_2O_4$ phosphor target and thin film for FED (FED용 $ZnGa_2O_4$ 형광체 타겟과 박막의 제작 및 특성분석)

  • Kim, Yong-Chun;Hong, Beom-Joo;Kim, Kyung-Hwan;Park, Yong-Seo;Choi, Hyung-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1092-1095
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    • 2004

  • The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

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Nano-structural Characteristics of N-doped ZnO Thin Films (N-doped ZnO 박막의 미세 구조 특성)

  • Lee, Eun-Ju;Zhang, Ruirui;Park, Jae-Don;Yoon, Gi-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.11
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    • pp.2385-2390
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    • 2009

  • N-doped ZnO thin films with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, $N_2O$ gas was employed as a dopant source and various deposition conditions such as $N_2O$ gas fraction and RF power were applied. The depth pofiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by Auger Electron Spectroscopy(AES) and the nano-scale structural characteristics of the N-doped ZnO thin films were also investigated by a scanning electron microscope (SEM) technique.

  • https://doi.org/10.6109/JKIICE.2009.13.11.2385 인용 PDF KSCI

A properties of ZnO thin film deposited by magnetron sputtering and its resistivity and microstructure due to annealing (Magnetron sputtering으로 증착한 ZnO 박막의 특성과 열처리에 따른 비저항과 미세구조)

  • 이승환;성영권;김종관
    • Electrical & Electronic Materials
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    • v.10 no.2
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    • pp.126-133
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    • 1997

  • In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

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