• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.535-538
• /
• 2004

Zinc Oxide (ZnO) films have attracted considerable attention for transparent conducting films, because of their high conductivity, good optical transmittance from UV to near IR as well as a low-cost fabrication. To increase the conductivity of ZnO, doping of group III elements (Al, Ga, In and B) has been carried out. Transparent conducting films have been applied for optoelectric devices, the development of the transparent conducting thin films on flexible light-weight substrates are required. In this research, the transparent conducting ZnO thin films doped with Aluminum (Al) on polymer substrates were deposited by the RF magnetron suputtering method, and the structural, optical and electrical properties were investigated.

• Advances in nano research
• /
• v.14 no.6
• /
• pp.557-573
• /
• 2023

The rapid growth of zinc-oxide (ZnO) nanostructures (NSs) on woven carbon fiber (WCF) is reported in this study employing a microwave-aided chemical bath deposition process. The effects of different process parameters such as molar concentration, microwave duration and microwave power on morphologies and growth rate of the ZnO on WCF were studied. Furthermore, an attempt has been taken to study influence of different type of growth solutions on ZnO morphologies and growth rates. The surface functionalization of WCF fabrics is achieved by successful growth of crystalline ZnO on fiber surface in a very short duration through one-step microwave synthesis. The morphological, structural and compositional studies of ZnO-modified WCF are evaluated using field-emission scanning electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy respectively. Good amount of zinc and oxygen has been seen in the surface of WCF. The presence of the wurtzite phase of ZnO having crystallite size 30-40 nm calculated using the Debye Scherrer method enhances the surface characteristics of WCF fabrics. The UV-VIS spectroscopy is used to investigate optical properties of ZnO-modified WCF samples by absorbance, transmittance and reflectance spectra. The variation of different parameters such as dielectric constants, optical conductivity, refractive index and extinction coefficient are examined that revealed the enhancement of optical characteristics of carbon fiber for wide applications in optoelectronic devices, carbon fiber composites and photonics.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.16 no.2
• /
• pp.1555-1562
• /
• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.12
• /
• pp.3586-3590
• /
• 2013

We present here an efficient and simple method for preparation of highly active heterogeneous ZnO photocatalyst (graphene oxide-zinc oxide: GO-ZnO), specifically by deposition of ZnO nanoparticles onto thiolated GOs. The resultant GO-ZnO sample was characterized by TEM, XRD, Auger, XPS, and Raman measurements, revealing that the size-similar and quasi-spherical ZnO nanoparticles were anchored to the thiolated GO surfaces. The average particle diameter was about 2.5 nm. In the photodegradation of methylene blue (MB) under ultraviolet (UV) light, GO-ZnO exhibited remarkably enhanced photocatalytic efficiency compared with thiolated GO and pure ZnO particles. This strong photocatalytic performance of GO-ZnO can be attributed to the suppression of electron recombination and the enhancement of mass transportation. The results showed that thiolated GO is the preferable supporting material.

• Journal of the Korean Chemical Society
• /
• v.56 no.1
• /
• pp.47-53
• /
• 2012

We have investigated the growth kinetics and electronic properties of passive film of zinc in borate buffer solution. The oxide film formed in passivation process of zinc has showed the electronic properties of n-type semiconductor based on the Mott-Schottky equation. And it was found out that the oxide film consisted ZnO and $Zn(OH)_2$ was composed of deep and shallow donors.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.592-598
• /
• 1998

AZO(Aluminum doped Zinc Oxide) thin films were fabricated by reactive DC magnetron sputtering method using zinc metal target (Al 2%) and zinc oxide target ($Al_2O_3\;2%$) respectively. The intermediate condition with optimum transmittance and conductivity was obtained by controlling the sputtering parameters. Oxygen gas ratio for this condition was $0.5{\times}10^{-2}~1.0{\times}10^{-2}$ in oxide target and. In case of metal target, this optimum oxygen gas ratio at the applied power of 0.6 kW and 1.0 kW was 0.215~0.227 and 0.305~0.315, respectively. The resistivity of AZO film deposited was obtained $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}$cm as deposited state regardless of target species.

• Korean Journal of Materials Research
• /
• v.17 no.5
• /
• pp.273-277
• /
• 2007

Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.4
• /
• pp.480-492
• /
• 1996

AZO (Aluminum doped Zinc Oxide) transparent conducting thin films were fabricated by reactive DC mangnetron sputtering method using zinc target containing 2 wt% of Al. Transition range with optimum transmittance and conductivity was obtained by contrlling partial pressure of reactive oxygen gas. Sputtering condition for this transition range could be kept stable by regulating the target voltage. According to XRD analysis, there was only one peak for (002) plane in AZO films and the films deposited in transition range.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.926-929
• /
• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• Clean Technology
• /
• v.19 no.3
• /
• pp.300-305
• /
• 2013

Zinc oxide (ZnO) and reduced graphite oxide (rGO) composites were synthesized and tested as adsorbents for the hydrogen sulfide ($H_2S$) adsorption at mid-to-high (300 to $500^{\circ}C$) temperatures. In order to investigate the critical roles of oxygen containing functional groups, such as hydroxyl, epoxy and carboxyl groups, attached on rGO surface for the $H_2S$ adsorption, various characterization methods (TGA, XRD, FT-IR, SEM and XPS) were conducted. For the reduction process for graphite oxide (GO) to rGO, a microwave irradiation method was used, and it provided a mild reduction environment which can remain substantial amount of oxygen functional groups on rGO surface. Those functional groups were anchoring and holding nano-sized ZnO onto the 2D rGO surface; and it prevented the aggregation effect on the ZnO particles even at high temperature ranges. Therefore, the $H_2S$ adsorption capacity had been increased about 3.5 times than the pure ZnO.