• Title/Summary/Keyword: ZnO(Zinc Oxide)

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Study of ITO/ZnO/Ag/ZnO/ITO Multilayer Films for the Application of a very Low Resistance Transparent Electrode on Polymer Substrate

  • Han, Jin-Woo;Han, Jeong-Min;Kim, Byoung-Yong;Kim, Young-Hwan;Kim, Jong-Yeon;Ok, Chul-Ho;Seo, Dae-Shik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.798-801
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    • 2007
  • Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

Selective Laser Direct Patterning of Indium Tin Oxide on Transparent Oxide Semiconductor Thin Films

  • Lee, Haechang;Zhao, Zhenqian;Kwon, Sang Jik;Cho, Eou Sik
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.4
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    • pp.6-11
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    • 2019
  • For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO4 laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

The effect of nano-Zinc oxide on the self-cleaning properties of cotton fabrics for textile application

  • Panutumrong, Praripatsaya;Metanawin, Tanapak;Metanawin, Siripan;O-Charoen, Narongchai
    • International Journal of Advanced Culture Technology
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    • v.3 no.1
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    • pp.13-20
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    • 2015
  • The self-cleaning properties of nano-zinc oxide on cotton fabrics have been investigated. The cotton fabric has been prepared by pad-dry method. The nano-zinc oxide was encapsulated in the polystyrene particle by mini-emulsion process prior used. The loading amount of zinc oxide particles into the mini-emulsion were various from 1% wt to 40%wt. The particles sizes of ZnO-encapsulated polystyrene mini-emulsion were determined using dynamic light scattering. It was showed that the particle size of the mini-emulsion was in the range of 124-205 nm. The topography and morphology of ZnO-encapsulated polystyrene which coated on cotton fabrics was observed using scanning electron microscopy. The crystal structure of ZnO-coated on cotton fabrics was explored by X-ray diffraction spectroscopy. The photocatalytic activities of zinc oxide were present through the self-cleaning properties. The presents of the zinc oxide on cotton fabrics significantly showed the improving of the self-cleaning properties under UV radiation.

A study on the zinc oxide crystalline powder synthesized by zinc chloride solution and sodium-based alkali precipitants (염화아연 수용액과 나트륨계 알칼리 침전제 종류에 따라 합성한 산화아연 결정 분말에 대한 연구)

  • Dae-Weon Kim;Dae-Hwan Jang;Bo-Ram Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.1
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    • pp.15-21
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    • 2023
  • To prepare zinc oxide powder, three types of sodium-based alkali precipitants such as NaOH, Na2CO3, NaOH/NaHCO3 were compared to the differences in the manufacturing process of zinc oxide powder from zinc precipitate products like intermediates with the consideration of thermodynamic reaction. The prepared zinc precipitate products by the reaction with the sodium-based alkali precipitant were confirmed to respectively hydroxy zinc chloride (Zn5(OH)8Cl2·H2O) and zinc carbonate hydroxide (Zn5(OH)6(CO3)2·H2O) from XRD analysis. Zinc oxide particles were compared in heat treatment at 800℃ according to sodium-based alkali precipitants. The mixed NaOH and NaHCO3 of alkali precipitant reaction was contributed to synthesize the more uniform zinc oxide particles.

Mechanochemical Synthesis of Zinc Ferrite, $ZnFe_2O_4$

  • Sawada, Yutaka;Iizumi, Kiyokata;Kuramochi, Tomokazu;Wang, Mei-Han;Sun, Li-Xian;Okada, Shigeru;Kudou, Kunio;Shishido, Toetsu;Matsushita, Jun-Ichi
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.971-972
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    • 2006
  • Mechanochemical synthesis of zinc ferrite, $ZnFe_2O_4$, was attempted from a powder mixture of iron (III) oxide, alpha-$Fe_2O_3$ and zinc (II) oxide, ZnO. Nanocrystalline zinc ferrite, $ZnFe_2O_4$ powders were successfully synthesized only bymilling for 30 hours. Evidence of the $ZnFe_2O_4$ formation was absent for the powders milled for 10 and 20 hours; the milling lowered the crystallinity of the starting materials. Heating after milling enhanced the formation of $ZnFe_2O_4$, crystal growth of $ZnFe_2O_4$ and the unreacted starting materials. The unreacted starting materials decreased their amounts by heating at higher temperatures.

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Microstructure and Electrical Properties of $SiO_2$-Doped Zinc Oxide Varistors ($SiO_2$가 첨가된 산화아연 바리스터의 미세구조 및 전기적 특성)

  • 남춘우;정순철
    • Electrical & Electronic Materials
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    • v.10 no.7
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    • pp.659-667
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    • 1997
  • The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

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The Application for Electrophotographic Photoreceptors of Zinc Oxide Adsorbed Copper Phthalocyanine and Sunfast Yellow (색소 흡착 산화아연 감광체의 전자사진 특성에 관한 연구)

  • Heo, Sun Ok;Kim, Young Soon
    • Journal of the Korean Chemical Society
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    • v.38 no.9
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    • pp.632-639
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    • 1994
  • For dye sensitization of zinc oxide in the visible region, copper phthalocyanine(CuPc) and sunfast yellow(SY) were adsorbed in two layers on zinc oxide powder. The adsorption structures of $\alpha-and\beta-CuPc$ on zinc oxide were investigated by photoacoustic, IR and Raman spectra. The ${\alpha}-and\;{\beta}$-polymorphs exhibited dimeric structure or molecular aggregates. The surface photovoltaic effect of ZnO/CuPc/SY showed higher than that of ZnO/SY/CuPc and $ZnO/\beta-CuPc/SY$ indicated better photosensitive than $ZnO/\alpha-CuPc/SY.$ Electrophotographic sensitivity of $ZnO/\beta-CuPc/SY$ was $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ at 630 nm.

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Fabrication and Photoelectrochemical Properties of an Oxide Photoanode with Zinc Oxide Nanorod Array Embedded in Cuprous Oxide Thin Film (산화아연 나노막대가 내장된 아산화구리 박막 구조를 이용한 산화물 광양극 제작 및 광전기화학적 특성)

  • Min, Byeongguk;Kim, Hyojin
    • Korean Journal of Materials Research
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    • v.29 no.3
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    • pp.196-203
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    • 2019
  • We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide ($Cu_2O$) thin film, namely a $ZnO/Cu_2O$ oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of $Cu_2O$ layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this $ZnO/Cu_2O$ p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs $Hg/Hg_2Cl_2$, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

Mechanically Flexible and Transparent Zinc Oxide Thin Film Transistor on Plastic Substrates (Plastic 기판 상의 투명성과 유연성을 지닌 Zinc Oxide 박막 트랜지스터)

  • Park, Kyung-Yea;Ahn, Jong-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.10-10
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    • 2009
  • We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

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Electrical Properties of Zinc Oxide Varistor with $\alpha-Zn_7Sb_2O_{12}$ ($\alpha-Zn_7Sb_2O_{12}$ 첨가에 의한 Zinc Oxide 바리스터의 전기적 특성)

  • 김경남;한상목
    • Journal of the Korean Ceramic Society
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    • v.31 no.11
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    • pp.1396-1400
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    • 1994
  • Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

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