• Elastomers and Composites
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• 제45권3호
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• pp.206-211
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• 2010

실온의 초음파 조건에서 질산 아연과 수산화 나트륨을 각각 물과 알코올 용액에서 반응시켜 산화 아연(ZnO) 나노입자를 합성하였다. 풀러렌($C_{60}$)과 ZnO 나노입자들은 전기로를 이용하여 각각 $700^{\circ}C$ 에서 2 시간 동안 가열하였다. 풀러렌($C_{60}$)과 ZnO 나노입자들의 형태와 광학성질은 XRD, SEM, TEM 과 UV-vis spectroscopy를 이용하여 분석하였다. 가열한 $C_{60}$과 ZnO 나노입자, 비가열한 $C_{60}$과 ZnO 나노입자를 각각 methylene blue(MB), methyl orange(MO), rhodamine B(RhB)용액에서 UV-vis spectroscopy를 사용하여 광촉매 분해반응을 연구하였다.

• 대한약침학회지
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• 제15권3호
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• pp.13-18
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• 2012

Objectives: The purpose of this study is to examine whether Hominis Placental pharmacopuncture solution (HPPS) combined with zinc-oxide nanoparticles (ZnO NP) activates RAW 264.7 cells. Methods: We soaked ZnO nanoparticles in the Hominis Placenta pharmacopuncture solution, thereby making a combined form (ZnO NP HPPS). The effect of ZnO NP HPPS on the intracellular reactive oxygen species (ROS) production was measured by 2', 7'-dichlorofluorescin diacetate (DCFH-DA) assay. The effect of ZnO NP HPPS on NF-${\kappa}B$ was measured by using a luciferase assay. The effect of ZnO NP HPPS on the cytokine expression was assessed by semi-quantitative reverse transcriptase polymerase chain reaction (RT-PCR). The cellular uptake of ZnO NP HPPS was measured by using a flow cytometric analysis, and cellular structural alterations were analyzed by using transmission electron microscopy (TEM). Results: Neither the HPPS nor the ZnO NPs induced intracellular ROS production in RAW 264.7 cells. Neither of the materials activated NF-${\kappa}B$ or it's dependent genes, such as TNF-${\alpha}$, IL-1, and MCP-1. However, ZnO NP HPPS, the combined form of ZnO NPs and HPPS, did induce the intracellular ROS production, as well as prominently activating NF-${\kappa}B$ and it's dependent genes. Also, compared to ZnO NPs, it effectively increa-sed the uptake by RAW 264.7 cells. In addition, cellular structural alterations were observed in groups treated with ZnO NP HPPS. Conclusions: Neither ZnO NP nor HPPS activated RAW 264.7 cells, which is likely due to a low cellular uptake. The ZnO NP HPPS, however, significantly activated NF-${\kappa}B$ and up-regulated its dependent genes such as TNF-${\alpha}$, IL-1, and MCP-1. ZnO NP HPPS was also more easily taken into the RAW 264.7 cells than either ZnO NP or HPPS.

• Restorative Dentistry and Endodontics
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• 제48권1호
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• pp.3.1-3.14
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• 2023

Objectives: This study evaluated the effect of different nanoparticulated zinc oxide (nano-ZnO) and conventional-ZnO ratios on the physicochemical properties of calcium aluminate cement (CAC). Materials and Methods: The conventional-ZnO and nano-ZnO were added to the cement powder in the following proportions: G1 (20% conventional-ZnO), G2 (15% conventional-ZnO + 5% nano-ZnO), G3 (12% conventional-ZnO + 3% nano-ZnO) and G4 (10% conventional-ZnO + 5% nano-ZnO). The radiopacity (R_ad), setting time (S_et), dimensional change (D_c), solubility (S_ol), compressive strength (C_st), and pH were evaluated. The nano-ZnO and CAC containing conventional-ZnO were also assessed using scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Radiopacity data were analyzed by the 1-way analysis of variance (ANOVA) and Bonferroni tests (p < 0.05). The data of the other properties were analyzed by the ANOVA, Tukey, and Fisher tests (p < 0.05). Results: The nano-ZnO and CAC containing conventional-ZnO powders presented particles with few impurities and nanometric and micrometric sizes, respectively. G1 had the highest Rad mean value (p < 0.05). When compared to G1, groups containing nano-ZnO had a significant reduction in the S_et (p < 0.05) and lower values of D_c at 24 hours (p < 0.05). The C_st was higher for G4, with a significant difference for the other groups (p < 0.05). The S_ol did not present significant differences among groups (p > 0.05). Conclusions: The addition of nano-ZnO to CAC improved its dimensional change, setting time, and compressive strength, which may be promising for the clinical performance of this cement.

• 한국의류학회지
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• 제47권3호
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• pp.577-592
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• 2023

In this study, nanofiber-based textile sensors were developed for motion detection and monitoring. Poly(vinylidene fluoride) (PVDF) nanofibers containing zinc oxide (ZnO) nanoparticles and silver nanowires (AgNW) were fabricated using electrospinning. PVDF was chosen as a piezoelectric polymer, zinc oxide as a piezoelectric ceramic, and AgNW as a metal to improve electric conductivity. The PVDF/ZnO/AgNW nanocomposite fibers were used to develop a textile sensor, which was then incorporated into an elbow band to develop a wearable smart band. Changes in the output voltage and peak-to-peak voltage (V_p-p) generated by the joint's flexion and extension were investigated using a dummy elbow. The β-phase crystallinity of pure PVDF nanofibers was 58% when analyzed using Fourier transform infrared spectroscopy; however, the β-phase crystallinity increased to 70% in PVDF nanofibers containing ZnO and to 78% in PVDF nanocomposite fibers containing both ZnO and AgNW. The textile sensor's output voltage values varied with joint-bending angle; upon increasing the joint angle from 45° to 90° to 150°, the V_p-p value increased from 0.321 V_p-p to 0.542 V_p-p to 0.660 V_p-p respectively. This suggests that the textile sensor can be used to detect and monitor body movements.

• 대한수의학회지
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• 제55권2호
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• pp.133-139
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• 2015

The increasing uses of zinc oxide nanoparticles (nZnO) in industrial and personal care products raise possible danger of using nZnO in human. To determine whether ZnO induces size-dependent anomalies during embryonic organogenesis, mouse embryos on embryonic day 8.5 were cultured for 2 days under 50, 100, and $150{\mu}g$ of nZnO (< 100 nm) or micro-sized ZnO (mZnO; $80{\pm}25{\mu}m$), after which the morphological changes, cumulative quantity of Zn particles, and expressions of antioxidant and apoptotic genes were investigated. Although embryos exposed to $50{\mu}g$ of ZnO exhibited no defects on organogenesis, embryos exposed to over $100{\mu}g$ of ZnO showed increasing anomalies. Embryos treated with $150{\mu}g$ of nZnO revealed significant changes in Zn absorption level and morphological parameters including yolk sac diameter, head length, flexion, hindbrain, forebrain, branchial bars, maxillary process, mandibular process, forelimb, and total score compared to the same dose of mZnO-treated embryos. Furthermore, CuZn-superoxide dismutase, cytoplasmic glutathione peroxidase (GPx) and phospholipid hydroperoxidase GPx mRNA levels were significantly decreased, but caspase-3 mRNA level was greatly increased in nZnO-treated embryos as compared to normal control embryos. These findings indicate that nZnO has severer teratogenic effects than mZnO in developing embryos.

• 한국표면공학회지
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• 제52권6호
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• pp.289-292
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• 2019

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10^-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국세라믹학회지
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• 제33권10호
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• pp.1117-1123
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• 1996

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.187-187
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• 2012

Solution-processed metal-alloy oxides such as indium zinc oxide (IZO), indium gallium zinc oxide (IGZO) has been extensively researched due to their high electron mobility, environmental stability, optical transparency, and solution-processibility. In spite of their excellent material properties, however, there remains a challenging problem for utilizing IZO or IGZO in electronic devices: the supply shortage of indium (In). The cost of indium is high, what is more, indium is becoming more expensive and scarce and thus strategically important. Therefore, developing an alternative route to improve carrier mobility of solution-processable ZnO is critical and essential. Here, we introduce a simple route to achieve high-performance and low-temperature solution-processed ZnO thin film transistors (TFTs) by employing alkali-metal doping such as Li, Na, K or Rb. Li-doped ZnO TFTs exhibited excellent device performance with a field-effect mobility of $7.3cm^2{\cdot}V-1{\cdot}s-1$ and an on/off current ratio of more than 107. Also, in case of higher drain voltage operation (VD=60V), the field effect mobility increased up to $11.45cm^2{\cdot}V-1{\cdot}s-1$. These all alkali metal doped ZnO TFTs were fabricated at maximum process temperature as low as $300^{\circ}C$. Moreover, low-voltage operating ZnO TFTs was fabricated with the ion gel gate dielectrics. The ultra high capacitance of the ion gel gate dielectrics allowed high on-current operation at low voltage. These devices also showed excellent operational stability.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.