• Title/Summary/Keyword: ZnCdO

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Electrical characteristics of ZnO nanowire - CdTe nanoparticle nano floating gate memory device (ZnO 나노선과 CdTe 나노입자를 이용한 NFGM 소자의 전기적 특성)

  • Yoon, Chang-Joon;Yeom, Dong-Hyuk;Kang, Jeong-Min;Jeong, Dong-Young;Kim, Mi-Hyun;Koh, Eui-Kwan;Koo, Sang-Mo;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.136-137
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    • 2007
  • In this study, a single ZnO nanowire - CdTe nanoparticle nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of ZnO nanowire-based field effect transistor (FET) devices with CdTe nanoparticles embedded in the $Al_2O_3$ gate materials and without the CdTe nanoparticles.

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A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

  • Sim, Hana;Lee, Jeongmin;Cho, Seongjae;Cho, Eou-Sik;Kwon, Sang Jik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.267-275
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    • 2015
  • In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

Quantum dot sensitized ZnO nanowire array for solar cell application

  • Seol, Min-Su;Kim, Hui-Jin;Kim, U-Seok;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.384-384
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    • 2011
  • 양자점 감응형 태양전지는 염료감응형 태양전지와 비슷한 구조를 가지지만, 유기물 염료를 대신하여 무기물 양자점을 사용함으로서 기존 유기물 염료가 가지는 한계점을 극복할 수 있다. 양자점을 광감응 염료로 사용하는 경우 양자제한효과(quantum confinement effect)에 의해 양자점의 사이즈조절만으로 밴드갭을 조절할 수 있어 광학적 특성 조절이 용이하며, 유기물 염료보다 광흡수 능력도 뛰어나다. 더불어, 하나의 광자를 흡수하여 두개 이상의 전자-정공쌍을 만들 수 있는(multiple exciton generation) 가능성이 있어 기존 태양전지가 가지는 이론적 한계효율(Shockley-Queisser limit)을 뛰어넘을 수 있다. 본 연구에서는 고효율의 양자점 감응형 태양전지 개발을 위해, ZnO 나노선 구조에 CdS, CdSe 양자점을 증착한 CdSe/CdS/ZnO 나노선 헤테로구조를 수열합성법으로 합성하였다. 증착한 CdSe/CdS 양자점이 태양광의 가시광 전 영역을 흡수하여 전자-정공을 생성하며, 세 물질 간의 밴드구조를 통해 양자점에서 생성된 전자가 ZnO 나노선으로 포집되고, 바닥전극으로 직접연결이 되어있는 1차원의 나노선 구조를 통해 전자를 효율적으로 운반할 수 있다.

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Optical and structural properties of Al-doped CdZnO thin films with different Al concentrations (Al 도핑 농도에 따른 Al-doped Cd0.5Zn0.5O 박막의 광학적·구조적 특성)

  • Park, Hyeong-Gil;Nam, Gi-Ung;Yun, Hyeon-Sik;Kim, So-A-Ram;Kim, Min-Su;Im, Jae-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.245-246
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    • 2012
  • Al 농도를 0 부터 2 at.% 까지 조절하여 도핑된 $Cd_{0.5}Zn_{0.5}O$ 박막을 석영 기판 위에 성장하였다. Al 도핑된 $Cd_{0.5}Zn_{0.5}O$ 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. 광학적 밴드갭은 Al 도핑 농도가 증가함에 따라 2.874 (0 at.%), 2.874 (0.5 at.%), 3.029 (1.0 at.%), 3.038 (1.5 at.%), 3.081 eV (2.0 at.%)로 증가하였다. Urbach energy는 도핑 농도에 따라 각각 464 (0 at.%), 585 (0.5 at.%), 571 (1.0 at.%), 600 (1.5 at.%), 470 meV (2.0 at.%)이었다. 또한, Al 농도가 증가함에 따라 $Cd_{0.5}Zn_{0.5}O$ 박막의 표면, 구조적 및 광학적 특성이 크게 변화되었다.

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Development of the 3 Dimensional ZnO Nanostructures for the Highly Efficient Quantum Dot Sensitized Solar Cells

  • Kim, Hui-Jin;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.672-672
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    • 2013
  • 본 연구에서는 수열합성법을 기반으로 한 3차원 ZnO 나노구조의 합성을 통해 효율적인 양자점 감응형 태양전지로의 응용을 하고 그 특성을 평가하였다. 기존의 1차원 ZnO 나노구조의 경우 높은 전자이동도와 구조적으로 얻을 수 있는 방향성 있는 전자의 효율적인 전달을 통해 효과적인 광전극으로 많은 관심을 받아왔다. 하지만 나노파티클 기반의 필름에 비해 표면적이 크게 떨어지기 때문에 효과적인 흡광이 어렵다는 단점이 존재하여 높은 효율특성을 내지는 못하였다. 본 연구에서는 이러한 단점을 극복하면서 기존 ZnO 나노선의 장점을 극대화 하기 위해 성장시킨 ZnO 나노선 위에 추가적으로 가지를 형성하여 표면적 향상과 효과적인 전자전달 특성을 얻고자 하였다. 3차원 ZnO 나노구조는citrate 계열의 capping agent의 첨가를 통한 수열 합성법을 통해 1차원의 ZnO 나노선 위에 nanosheet 형식의 가지를 형성하였고 이는 빛의 효과적인 산란특성 및 표면적 향상을 통한 CdS, CdSe의 양자점 증착량을 증가시키는 효과를 얻을 수 있었다. 이러한 태양전지의 소자 특성은 SEM, TEM을 통한 구조 특성평가 및 DRS, J-V curve 및 IPCE를 통한 광학적 특성평가를 통해 확인하였다.

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Magnetic dependence of cyclotron resonance in the electron-piezoelectric phonon interacting materials

  • Park, Jung-Il;Sug, Joung-Young
    • Journal of the Korean Magnetic Resonance Society
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    • v.24 no.1
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    • pp.16-22
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    • 2020
  • Based on quantum transport theory, we investigated theoretically the magnetic field dependence of the quantum optical transition of quasi 2-dimensional Landau splitting system, in CdS and ZnO Through the analysis of the current work, we found the increasing properties of the cyclotron resonance line-profiles (CRLPs) which show the absorption power and the cyclotron resonance line-widths (CRLWs) with the magnetic field in CdS and ZnO We also found that that CRLWs, γtotal(B) of CdS < γtotal(B) of ZnO in the magnetic field region B < 15 Tesla.

Fabrication of ZnO/TiO2 Nanoheterostructure and Its Application to Photoelectrochemical Cell

  • Song, Hong-Seon;Kim, Hui-Jin;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.459.1-459.1
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    • 2014
  • Because both $TiO_2$ and ZnO has superior characteristic optically and electrically, there are various of research for these materials. However, they have large band gap energy which correspond with not visible light, but UV light. To make up for this disadvantage, Quantum dots (CdS, CdSe) which can absorb the visible light could be deposited on $ZnO/TiO_2$ nanostructure so that the the photoelectrochecmical cell can absorb the light that has larger region of wavelength. Both $TiO_2$ and ZnO can be grown to one-dimensional nanowire structure at low temperature through solutional method. Three-dimensional hierarcical $ZnO/TiO_2$ nanostructure is fabricated by applying these process. Large surface area of this structure make the light absorbed more efficiently. Through type 2 like-cascade energy band structure of nanostructure, the efficient separation of electron-hole pairs is expected. Photoelectrochemical charateristics are found by using these nanostructure to photoelectrode.

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Effect of metals(Cd & Zn) and its nitrogen compounds on growth of bacteria isolated from the three tributaries and lower reach(Mulgum) of the Nakdong River (낙동강 하류(물금)와 세 지류에서 분리된 우점 세균의 증식에 미치는 금속(Cd & Zn) 및 그 질소 화합물의 영향)

  • Park, Jae-Rim;Son, Yeon-Ju;Ha, Kyung;Park, Joong-Chul
    • Journal of Environmental Science International
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    • v.11 no.3
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    • pp.183-189
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    • 2002
  • Investigation was carried out to observe the dominant bacteria and the effect of metals(Cd & Zn) and its nitrate compound on growth of bacteria isolated from the three tributaries and lower reach of the Nakdong River. Mean CFU(log$_{10}$) level was highest in Kumho River(8.30 CFU), Nam River, Hwang River, and Mulgum followed. Staphylococcus xylosus, Staph. lentus, Pasteurella pneumotropica, Aeromonas hydrophilla were dominant species in each study site. Cadmium powder and Zinc powder showed strong effect to inhibit the growth of Micrococcus spp., Pasteurella pneumotropica, Aeromonas hydrophilla. But, nitrate compounds of Cd and Zn(Cd(NO$_3$)$_2$4$H_2O$, Zn(NO$_3$)$_2$6$H_2O$) did not clearly show the strong effect to inhibit the growth of dominants.s.

The Effect of the Zn contents on Rapidly Solidified Ag-Zn Electric Contact Materials. (급속응고한 Ag-Zn계 전기접점재료에 미치는 Zn함량의 영향)

  • Kim, Jong Kyu;Jang, Dae Jung;Ju, Kwang Il;Lee, Eun Ho;Um, Seung Yeul;Nam, Tae Woon
    • Korean Journal of Metals and Materials
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    • v.46 no.7
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    • pp.443-448
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    • 2008
  • Contact materials are used in many electrical devices. Ag-Cd alloy has been widely used in electrical part, because Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy isn't being used because of environmental challenges. Currently new research is being done on ($Ag-SnO_2$ and $Ag-SnO_2-In_2O_3$) as an alternative solution to fix any remainly environmental challenges. However $In_2O_3$ is more expensive and Ag-Sn alloy has low wear resistance. According to our research data Zn has a similar physical and chemical property. In this work, so we changed and optimized the Zn oxide to over 4 and added Sn oxide ratio 0.5, 1.0, 1.5wt%. Conclusions from the data recorded from the experiment of $Ag-ZnO-SnO_2$ are as follows.