• Title/Summary/Keyword: ZnBO

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The effect of the working pressure on electro-optical properties of aluminium-doped zinc oxide thin film

  • Bang, Bo-Rae;Koo, Hong-Mo;Moon, Yeon-Keon;Kim, Se-Hyun;Park, Jong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1526-1529
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    • 2005
  • Zinc oxide films have been actively investigated as transparent electrode materials for display. We report the effect of the working pressures on electro-optical properties of Al-doped ZnO thin films deposited by d.c. magnetron sputtering. The resistivity of the ZnO thin films was depended on atomic bombardment effect by working pressure.

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Structural and Electrical Properties of a-axis ZnO:Al Thin Films Grown by RF Magnetron Sputtering

  • Bong, Seong-Jae;Kim, Seon-Bo;An, Si-Hyeon;Park, Hyeong-Sik;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.329.1-329.1
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    • 2014
  • In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

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전류밀도 및 교반에 따른 Zn 수지상의 전착거동 분석

  • Kim, Si-Hyeong;Yu, Yeong-Jae;Baek, Seung-U;Gwon, Sang-Un;Sim, Jun-Bo;Kim, Gwang-Rak;Jeong, Heung-Seok;An, Do-Hui
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 2007.11a
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    • pp.283-284
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    • 2007
  • 75mA/$cm^{2}$ 이하에서는 Zn 석출물이 수지상으로 성장되지 않고 Ga 표면에 균일하게 전착되었으나, 85mA/$cm^{2}$ 이상에서는 수지상으로 성장하였다. 액체 Ga 표면에서 수지상 종자(seed)가 생성된 후에 그 종자를 중심으로 나뭇가지 모양으로 성장하였는데, 특히, bath stirrer와 가까운 영역에서 가장 빠르게 성장하였다. 또한, 수지상은 결합력이 매우 약하여 stirrer 에 의해 쉽게 파쇄됨을 확인하였다.

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Synthesis of Multiferroic Nanocomposites by a Polyol Method

  • Shim, In-Bo;Pyun, Jeffrey;Park, Yong-Wook;Uhm, Young-Rang;Kim, Chul-Sung
    • Journal of Powder Materials
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    • v.14 no.3 s.62
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    • pp.180-184
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    • 2007
  • The material design and synthesis are of important to modem science and technology. Here, we report the synthesis of multifunctional nanomaterials with different properties: feroelecties $YMnO_3$ and multiferroic materials such as $CoFe_2O_4-YMnO_3,\;Fe_3O_4-YMnO_3,\;CoFe_2O_4-Cd_{0.85}Zn_{0.15}S,\;and\;Fe_3O_4-Cd_{0.85}Zn_{0.15}S$ nano-composites by using a chemical synthesis process. These results provide a simple and convenient synthesis process to produce multifunctional nanocomposites.

Model Cut-edge Formed on Zinc Coated Steels by Laser Machining and Its Corrosion Behavior

  • Sakairi, Masatoshi;Kageyama, Akihiro;Kikuhchi, Tatsuya
    • Corrosion Science and Technology
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    • v.9 no.1
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    • pp.29-33
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    • 2010
  • Laser machining technique, which is used focusing pulse YAG laser beam irradiation was applied to form area ratio controlled model cut-edge on pre painted Zn coated steels. A corrosion behavior of formed model cut-edge was investigated by rest potential measurement in 1 mol $m^{-3}$ NaCl with and without 0.5 kmol $m^{-3}$ $H_3BO_4$/0.05kmol$m^{-3}$ $Na_2B_4O_7$. The rest potential showed almost constant value with fluctuations. The amplitude of fluctuations increased with exposed area of steel surface. White corrosion products of zinc oxide and simonkollite was formed after the experiments at the formed model cut-edge.

VUV luminescence properties of a novel green-emitting $(Y,Gd)Ga_3(BO_3)_4$:Tb phosphor

  • Moon, Young-Min;Choi, Sung-Ho;Lim, Sang-Ho;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1561-1564
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    • 2007
  • $Tb^{3+}-activated$ green-emitting $(Y,Gd)Ga_3(BO_3)_4$ phosphor has been investigated. The main absorption was in the $120{\sim}238$ nm and exhibited a green emission with the 545 nm and several peaks due to inner shell transition of $Tb^{3+}$ ion. With the optimized $Tb^{3+}$ concentrations, the maximum emission brightness was 90% of the $Zn_2SiO_4$:Mn phosphor.

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