• Asian-Australasian Journal of Animal Sciences
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• 제11권2호
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• pp.139-144
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• 1998

Eighteen lambs were used to determine the effects of zinc (Zn) level and source on Zn status and immune function during both normal conditions and conditions of physiologic stress. Treatments consisted of a basal diet (27.6 mg of Zn/kg), and the basal diet supplemented with 25 mg of Zn/kg, added as either zinc oxide or zinc methionine. The basal diet was a corn-cottonseed hull-isolated soy protein- based diet (14% CP). Lambs were weighed and blood samples taken at 28-d intervals for determination of serum Zn and alkaline phosphatase activity. Weights and serum Zn were similar (p > 0.10) among treatments at all sampling days. To evaluate immune responses and Zn status during conditions of physiologic stress lambs were administered 100 I.U. of adrenocorticotrophin (ACTH) on d 112 and feed was withheld for 48 h. Cortisol levels were elevated (p < .01) 5 h post ACTH injection, but had returned to initial levels after 48 h. Lymphocyte blastogenesis ([$^3H$]-thymidine incorporation) on d 112 (prior to ACTH injection) and 114 was unaffected (p > .10) by dietary treatment. However, blastogenesis in response to pokeweed mitogen was greater (p < .0001), whereas the response to phytohemagglutinin was reduced (p < .01) following ACTH administration and fasting. Antibody response to administration of porcine red blood cells was unaffected (p > .05) by dietary treatment. These results indicate that, given the Zn concentration of the basal diet, there was no enhancement of immune function by supplemental Zn, either before or after lambs were subjected to stress.

• Bulletin of the Korean Chemical Society
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• 제33권10호
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• pp.3213-3217
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• 2012

Reactive adsorption desulfurization (RADS) experiments were conducted over a series of commercial metal oxide supports ($Al_2O_{3-}$, $SiO_{2-}$, $TiO_{2-}$ and $ZrO_{2-}$) supported Ni/ZnO adsorbents. The adsorbents were characterized by X-ray diffraction (XRD), temperature programmed reduction (TPR), and Fourier transform infrared spectroscopy (FTIR) in order to find out the influence of specific types of surface chemistry and structural characteristics on the sulfur adsorptive capacity. The desulfurization performance of all the studied adsorbents decreased in the following order: Ni/ZnO-$TiO_2$ > Ni/ZnO-$ZrO_2$ > Ni/ZnO-$SiO_2$ > Ni/ZnO-$Al_2O_3$. Ni/ZnO-$TiO_2$ shows the best performance and the three hour sulfur capacity can achieve 12.34 mg S/g adsorbent with a WHSV of $4h^{-1}$. Various characterization techniques suggest that weak interaction between active component and support component, high dispersion of NiO and ZnO, high reducibility and large total Lewis acidity of the adsorbents are important factors in achieving better RADS performance.

• Journal of Animal Science and Technology
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• 제64권4호
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• pp.717-726
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• 2022

The study evaluated different molt-inducing methods to achieve the main goal of molting in commercial layers during molting and post-molting periods. A total of 400 60-week-old Lohmann Brown layers were randomly divided into five groups (eight replicates of 10 birds for each group). Laying hens in the fasting control group received no diet from day 1 to day 10. The second group received a molt-inducing diet recommended by the breeding company. The third group received a wheat bran-based diet. The fourth group received a commercial layer diet with 8,000 ppm zinc (as zinc oxide, ZnO). The fifth group received an induced molting diet given to the second group with 8,000 ppm zinc, respectively. Egg production in the fasting control group and groups fed a diet with ZnO were significantly lower (p < 0.001) than those in groups fed the molt-inducing and wheat bran-based diets without ZnO during molting. Egg laying in the fasting control group was rapidly reduced and stopped on the 5.9th day of molting. In both groups having molt treatment with ZnO, egg production was similarly reduced and ceased on the 6.9th day and 7.0th day of molting, respectively, none of them differed significantly from the control. Layers fed molt-inducing diet or wheat bran-based diet did not reach the cessation of laying even on the 28th d of molting period. Relative weights of the ovary and growing oocytes of layers subjected to fasting or fed diets with ZnO were significantly lower than those of other groups. During the first two weeks of post molting, layers fed molt-inducing diet with ZnO showed higher egg production than the other two groups (p < 0.01). The eggshell strength in the group fed the commercial diet with ZnO was significantly higher than those fed the molt-inducing diet or wheat bran-based diets at 6 weeks of post molting (p < 0.05). These results suggest that the non-feed withdrawal molting using ZnO is more effective in inducing molting and increasing post-molt egg production and egg quality than other methods using a molt-inducing diet alone or wheat bran-based diet without ZnO.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국포장학회지
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• 제20권2호
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• pp.41-49
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• 2014

This study illustrates the synthesis of gelatin based zinc oxide nanoparticle (ZnONPs) incorporated nanocomposite films using different concentrations of ZnONPs. The ZnONPs were oval in shape and the size ranged from 100- 200 nm. The nanocomposite films were characterized by UV-visible, FE-SEM, FT-IR, and XRD. The concentrations of ZnONPs greatly influenced the properties of nanocomposite films. The absorption peaks around 360 nm increased with the increasing concentrations of ZnONPs. The surface color of film did not change while transmittance at 280 nm was greatly reduced with increase in the concentration of ZnONPs. FTIR spectra showed the interaction of ZnONPs with gelatin. XRD data demonstrated the crystalline nature of ZnONPs. The thermostability, char content, water contact angle, water vapor permeability, moisture content, and elongation at break of nanocomposite films increased, whereas, tensile strength and modulus decreased with increase in the concentrations of ZnONPs. The gelatin/ZnONPs nanocomposite films showed profound antibacterial activity against both Gram-positive and Gram-negative food-borne pathogenic bacteria. The gelatin/$ZnONP^{1.5}$ nanocomposite film showed the best UV barrier and antimicrobial properties among the tested-films, which indicated a high potential for use as an active food packaging films with environmentally-friendly nature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1361-1363
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• 1997

Zinc oxide-based MOV was fabricated with $SiO_2$ additive ranging from 0.5 to 4.0 mol%, and the microstructure and electrical characteristics were investigated. $Zn_2SiO_4$ phase formed by $SiO_2$ additive was distributed at ZnO grains, grain boundaries, and multiple grain junctions. As the content of $SiO_2$ additive increases, average grain size decreased from 40.6 to $26.9{\mu}m$ due to the Pinning effect by $Zn_2SiO_4$ at grain boundaries Breakdown voltage and nonlinear exponent increased, and leakage current decreased in the range of $11.2{\sim}6.14{\mu}A$ with an increasing $SiO_2$. Donor concentration and interface state density decreased, and barrier height increased in the range of $0.71{\sim}1.04eV$ with an increasing $SiO_2$. While, as the content of $SiO_2$ additive, apparent dielectric constant decreased, peak frequency of dissipation factor decreased in the range of $6.45{\times}10^5{\sim}3.00{\times}10^5Hz$, and dissipation peak was $0.31{\sim}0.22$ at Peak frequency.

• 전기의세계
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• 제31권6호
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.540-542
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• 2009

Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.615-621
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• 2005

The electrical stability against surge stress of varistors, which are composed of Zn-Pr-Co-Cr-Y oxide system, were investigated at different sintering times. As sintering time increases, the varistor voltage and nonlinear exponent decreased in the range of $279.6\~179.1$ and $52.5\~24.9$, respectively. On the contrary, the leakage current and dielectric dissipation factor increased in the range of $1.2\~9.8\;{\mu}A$ and 0.0461\~0.0651 with increase of sintering time. For all varistors, the variation rates of V-I characteristic parameters against surge stress were more strongly affected in order of varistor voltage ${\rightarrow}nonlnear$ $exponent{\rightarrow}leakage$ current. On the whole, the electrical stability against surge stress increased with increasing sintering time. Conclusively, it is assumed that the varistors sintered for 2 h exhibited comparatively good characteristics, in view of overall characteristics.

• 센서학회지
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• 제24권1호
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• pp.41-46
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• 2015

In this work, pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped hierarchical ZnO structure was synthesized uniformly through photochemical route. The reduced graphene oxide (rGO) has been synthesized by typical Hummer's method and reduced by hydrazine. Prepared Ag/ZnO nanostructures are uniformly dispersed on the surface of rGO sheets using ultrasonication process. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. The average size of prepared ZnO microspheres was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of doped-Ag nanoparticles was 50 nm and decorated into ZnO/rGO network. The $C_2H_2$ gas sensing properties of as-prepared products were investigated using resistivity-type gas sensor. Ag/ZnO-rGO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the Ag/ZnO. The $C_2H_2$ sensor based on Ag/ZnO-rGO had linear response property from 3~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 22% and 78% for Ag/ZnO and Ag/ZnO-rGO, respectively. In additions, the sensor still shows high sensitivity and quick response/recovery to $C_2H_2$ under high relative humidity conditions. Moreover, the device shows excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.