• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.961-968
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• 2009

In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.276-276
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• 2012

The interface morphology of organic active layers is known to play a crucial role in the performance of organic photovoltaic (OPV) cells. Especially, a controlled nanostructure with a large contact area between electron donor (D) and acceptor (A) layers is necessary to improve the power conversion efficiency (PCE) of the cells since the short exciton diffusion lengths in organic semiconductors limit the charge (hole and electron) separation before excitons recombination. In this work, we developed simple solvent treating methods to fabricate a nanostructured DA interface and applied them to enhance the PCE of ZnPc/C60 based small molecule OPV cells. Interestingly, it was observed that the solvent treatment on the donor layer prior to the deposition of the acceptor layer resulted in a significant decrease in PCE, which was due to an existence of undesirable voids at the DA interface. Instead, the solvent vapor treatment after the DA bilayer formation led to densely packed and well dispersed DA contacts. Consequently, 3-fold enhancement of PCE as compared to the untreated bilayer cell was accomplished.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1249-1251
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• 1998

We have studied the properties of $GaAs_{0.35}P_{0.65}$ epitaxial films on the GaP according to doping of $NH_3$ gas using VPE method by CVD. The efficiency of $GaAs_{0.35}P_{0.65}$ epitaxial films found to be greatly enhanced by the according of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor grown $GaAs_{0.35}P_{0.65}$ epitaxial films doped with N and Te. The effects of nitrogen doping on carrier density of epitaxial films, PL wavelength and the power out, forward voltage of diodes are discussed. In the end, The effect of electrical and optical properties is influenced by the deep level and deep level density of nitrogen doping.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.483-488
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• 1996

InP 기판위에 InP와 격자정합된 undoped-InGaAs에서 zine의 확산 특성을 Electrochemical Capacitance-Voltage 법(polaron)과 Secondary Ion Mass Spectrometry(SIMS)로 조사하였다. Metallorganic Chemical Vapor Deposition (MOCVD)를 이용하여 undoped-InGaAs 층을 성장시켰으며 확산방법으로는 Zn3P2 확산원 박막과 Rapid Thermal Annealing (RTA)를 이용하였다. 450-55$0^{\circ}C$온도범위에서 30-300초 동안 확산을 수행한 결과 zinc의 확산계수는 D=Doexp(-$\Delta$E/kT)의 특성을 만족하였으며, Do와 $\Delta$E는 각각 1.3x105$\textrm{cm}^2$/sec와 2.3eV였다. 얻어진 확산계수는 다른 확산방법을 이용한 값들에 비해 매우 큰 값인데, 이것은 RTA 처리시 빠른 온도 증가에 의한 확산원 박막, 보호막, 그리고 InGaAs 에피층이 가지는 열팽창계수의 차이로인한 응력의 효과에 의한 것으로 생각되며, 이를 sealed-ampoule 법을 사용한 경우의 확산특성과 비교를 통하여 확인할 수 있었다.

• Applied Chemistry for Engineering
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• v.28 no.1
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• pp.1-7
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• 2017

Polydimethylsiloxane (PDMS) can be deposited on various substrates using chemical vapor deposition process, which results in the formation of PDMS thin films with thickness below 5 nm. PDMS layers can be evenly deposited on surfaces of nanoparticles composed of various chemical compositions such as $SiO_2$, $TiO_2$, ZnO, C, Ni, and NiO, and the PDMS-coated surface becomes completely hydrophobic. These hydrophobic layers are highly resistant towards degradation under acidic and basic environments and UV-exposures. Nanoparticles coated with PDMS can be used in various environmental applications: hydrophobic silica nanoparticles can selectively interact with oil from oil/water mixture, suppressing fast diffusion of spill-oil on water and allowing more facile physical separation of spill-oil from the water. Upon heat-treatments of PDMS-coated $TiO_2$ under vacuum conditions, $TiO_2$ surface becomes completely hydrophilic, accompanying formation oxygen vacancies responsible for visible-light absorption. The post-annealed $PDMS-TiO_2$ shows enhanced photocatalytic activity with respect to the bare $TiO_2$ for decomposition of organic dyes in water under visible light illumination. We show that the simple PDMS-coating process presented here can be useful in a variety of field of environmental science and technology.