• 제목/요약/키워드: Zn-Mg alloy films

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HEMM Al-SiO2-X 복합 분말을 Al-Mg 용탕에서 자발 치환반응으로 제조된 Al-Si-X/Al2O3 복합재료의 조직 및 마멸 특성 (Microstructure Evaluation and Wear Resistance Property of Al-Si-X/Al2O3 Composite by the Displacement Reaction in Al-Mg Alloy Melt using High Energy Mechanical Milled Al-SiO2-X Composite Powder)

  • 우기도;김동건;이현범;문민석;기웅;권의표
    • 한국재료학회지
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    • 제18권6호
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    • pp.339-346
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    • 2008
  • Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T+489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

A Study on the properties of aluminum nitride films on the Al7075 deposited by pulsed DC reactive magnetron sputtering

  • Kim, Jung-hyo;Cha, Byung-Chul;Lee, Keun-Hak;Park, Won-Wook
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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    • pp.179-180
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    • 2012
  • Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

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DC 스퍼터법에 의해 제작한 Zn계 합금박막의 나노조직구조와 전기화학적 특성 평가 (Nano Structure of Zn Alloy Thin Films Prepared by DC Sputtering Method and Their Electrochemical Characteristics Evaluation)

  • 배일용;김연원;문경만;김기준;이명훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2009년도 춘계학술대회 논문집
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    • pp.226-226
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    • 2009
  • 일반적으로 알루미늄이나 아연 등과 같은 이온화 경향이 큰 금속들은 그 자체의 활성적인 특성으로 인해 강재와 같은 이온화 경향이 낮은 금속재의 표면에 도금 또는 코팅함으로서 사용 환경 중 자체 내식성 보유와 더불어 손상 결함시 희생양극적인 역할 등의 잇점으로 많이 사용되고 있다. 본 연구에서는 DC 스퍼터링법에 의해 표면조직이 치밀한 여러 가지의 Zn-Mg 합금박막을 제작하였다. 이들 박막은 종래의 Zn도금에 비해 부식환경 중 장기간 갈바닉쌍을 형성하여 모재 금속에 대한 보호막 기능을 우수하게 하는 것으로 나타났다.

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24개월 대기 노출된 Al1050 및 Al7075 알루미늄 합금 산화막에 대한 투과전자현미경 분석 (TEM Analysis on Oxide Films of Al1050 and Al7075 Exposed to 24-month Atmospheric Conditions)

  • 김대건;김가림;최원준;반치범
    • 한국표면공학회지
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    • 제52권2호
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    • pp.62-71
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    • 2019
  • Al1050 and Al7075 alloy specimens were exposed to atmospheric conditions for 24 months and analyzed by Transmission Electron Microscopy to characterize their corrosion behavior and oxide film characteristics, especially focusing on intergranular corrosion or oxidation. In general, the intergranular oxygen penetration depth of Al1050 was deeper than Al7075. Since O and Si signals were overlapped at the oxidized grain boundaries of Al1050 and Mg is not included in Al1050, it is concluded that Si segregated along the grain boundaries directly impacts on the intergranular corrosion of Al1050. Cr-Si or Mg-Si intermetallic particles were not observed along the grain boundaries of Al7050, but Mg-Si particle was barely observed in the matrix. 10-nm size Mg-Zn particles were also found all over the matrix. Mg was mainly observed along the oxidized grain boundary of Al7075, but Si was not detected due to the Mg-Si particle formation in the matrix and relatively low concentration of Si in Al7075. Therefore, it is thought that Mg plays an important role in the intergranular corrosion of Al7075 under atmospheric corrosion conditions.