• 태양에너지
• /
• 제11권3호
• /
• pp.74-83
• /
• 1991

본 논문은 substrate의 온도를 $200{\pm}1^{\circ}C$ 정도로 유지하며 진공저항 가열 증착법을 이용하여 (p)ZnTe/(n)Si 태양전지와 (n)CdS-(p)ZnTe/(n)Si 복접합 박막을 제작한 후 그 전기적 특성을 조사, 비교하였다. 제작한 (p)ZnTe/(n)Si 태양전지와(n)CdS-(p)ZnTe/(n)Si 복접합 박막에 대하여 $100[mW/cm^2]$의 광조사 하에서 특성을 조사한바 다음과 같은 결과를 얻었다. 단략전류$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 개방전압[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 충실도, FF (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 변환효율[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 제작된 박막은 열처리에 의해 성능이 향상되지만 (p)ZnTe/(n)Si 태양전지는 약 $470^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서 그리고 (n)CdS-(p)ZnTe/(n)Si 복접합 박막은 약 $580^{\circ}C$ 이상의 온도와 15분 이상의 열처리 시간에서는 박막의 각종 구조결함으로 인한 감소현상을 나타내었다. 열처리 온도의 증가에 따라 박막의 표면저항은 감소하였다.

• Corrosion Science and Technology
• /
• 제22권2호
• /
• pp.123-130
• /
• 2023

This study aimed to evaluate corrosion resistance of steel coated with GI and Zn-Al-Mg alloy using cyclic corrosion test (CCT) with electrochemical polarization and impedance measurements. Results showed that the Zn-Al-Mg alloy coated steel had a much higher corrosion rate than GI coated steel in early stages of corrosion. With prolonged immersion, however, the corrosion rate of the Zn-Al-Mg alloy coated steel greatly decreased, mainly owing to a significant decrease in the cathodic reduction reaction and an increase in polarization resistance at the surface. This was closely associated with the formation of protective corrosion products including Zn₅(OH)₈Cl₂·H₂O and Zn₆Al₂(OH)₁₆CO₃. Moreover, when the steel substrate was locally exposed due to mechanical damage, the kinetics of anodic dissolution from the coating layer and the formation of protective corrosion products on the surface of the Zn-Al-Mg alloy coated steel became much faster compared to the case of GI coated steel. This could provide a longer-lasting corrosion inhibition function for Zn-Al-Mg alloy coated steel used in plant farms.

• 한국전자파학회논문지
• /
• 제14권3호
• /
• pp.290-295
• /
• 2003

Sheet형 전파흡수체를 제작하여 Mn-Zn페라이트의 입자크기에 따른 전파흡수능의 관계를 조사하였다. 입자 크기가 증가함에 따라 정합주파수는 낮은 쪽으로 이동하였으며, 정합주파수에서 전파흡수능은 감소하였다. 하지만 휴대폰의 사용주파수인 0.8 ㎓와 1.8 ㎓에서는 입자의 크기가 큰 것으로 구성되어 있는 전파흡수체자 작은 입자로 구성되어 있는 전파흡수체보다 우수한 전파흡수능을 나타내었다. 따라서 휴대폰용 전파흡수체를 Mn-Zn 페라이트 파우더로 제작할 경우에는 입자의 크기가 큰 것이 바람직하다고 생각된다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1564-1567
• /
• 2005

Zinc oxide thin films were grown at the t emperature of $100^{\circ}C$ and $150^{\circ}C$ by means of plasma enhanced atomic layer deposition (PEALD) and conventional atomic layer deposition for applying to the transparent thin film transistor (TTFT). The growth rate of $1.9{\AA}/cycle$ with oxygen plasma is similar to that of film grown with water. While the sheet resistivity of ZnO grown with water is 1233 ohm/sq, that of film grown with oxygen plasma was too high to measure with 4 point probe and hall measurement system. The resistivity of the films grown with oxygen plasma estimated to be $10^6$ times larger than that of the films grown with water. The difference of electrical property between two films was caused by the O/Zn atomic ratio. We fabricated ZnO-TFT by means of ALD for the first time and the ZnO channel fabricated with water showed saturation mobility of $0.398cm^2/V{\cdot}s$ with bottom gate configuration.

• 소성∙가공
• /
• 제8권3호
• /
• pp.227-227
• /
• 1999

The effects of intermediate annealing (IA) and the final cold rolling (CR) condition on the microstructure and sagging resistance during brazing were investigated using three layer clad sheets composed of the Al-7.5 wt.%Si alloy (filler, thickness: 10 ㎛)/Al-1.3 wt.%Mn based alloy (core, 80㎛)/Al-7.5 wt.%Si alloy (filler, 10㎛). Also, the effect of 1.2∼2 wt.% Zn addition into the core on the sagging resistance of the clad sheets was determined. It was revealed that all the clad sheets fabricated by the optimum condition (IA at 690 K and CR to 20∼45%) show excellent sagging resistance with a limited erosion due to the formation of a coarsely recrystallized grain structure in the core during brazing. It was also revealed that the recrystallization behavior of the Al-1.3 wt.%Mn based alloy is hardly affected by the addition of 1.2-2 wt.%Zn during the brazing cycle. Therefore, the sagging resistance of the clad sheets is found to be governed not by the Zn content added in the A1-1.3wt.%Mn based core, but by the intermediate annealing and final cold rolling condition.

• 한국레이저가공학회지
• /
• 제4권3호
• /
• pp.30-39
• /
• 2001

This work was tamed out to apply a laser welding technique in joining between a Zn coated low carbon steel plate(SECC) and a free cutting carbon steel shaft(SUM24L) with or without W coating. Experiments were carried out and analysed by applying the FD(factorial design)method to obtain the optimum Laser welding condition. Optical microscopy, SEM, TEM and XRD analyses were performed in order to observe the microstructures in the fusion zone and the HAZ. Mechanical properties of the welded specimens were examined by microhardness test, tensile test and twist test. There was no flawed Zn in the fusion zone by EDS analysis. This means that during the welding process, Zn gas could be eliminated by appropriate shielding gas flow rate and butt welding gap. Ni coating itself did not influence on the tensile strength and hardness. However, twist bending strength and the weld depth of the Ni-coated free cutting carbon steel were lower as compared with those of the uncoated free cutting carbon steel. It was attributed to a lower absorbance of laser beam to the shin Ni surface. According to the results of the factorial design tests, the twist bending strength of welded specimens was primarily affected by pulse width, laser power, frequency and speed.

• 한국전기전자재료학회논문지
• /
• 제28권1호
• /
• pp.7-11
• /
• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• 한국세라믹학회지
• /
• 제32권7호
• /
• pp.799-808
• /
• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• 반도체디스플레이기술학회지
• /
• 제6권3호
• /
• pp.35-39
• /
• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• Current Photovoltaic Research
• /
• 제5권4호
• /
• pp.135-139
• /
• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.