• 대한화학회지
• /
• 제33권6호
• /
• pp.601-606
• /
• 1989

Amberite IR 120+양이온 교환수지를 사용하고, 용리액으로 EDTA 용액을 사용하였을 때, 란탄계열원소들($Pr^{3+},\;Nd^{3+},\;Sm^{3+},\;Er^{3+}$)의 분배비와 분리인자에 미치는 온도의 영향과 수지상의 보유이온의 종류에 따르는 영향을 연구하였다. 보유이온들에 있어서는, ${NH_4}^+,\;Na^+,\;K^+,\;Mg^{2+},\;Ca^{2+},\;Zn^{2+}$ 및 $Ce^{3+}$들 중, $Ce^{3+}$이 Nd/Pr의 분리인자를 개선하는데 가장 좋은 효과를 주었으며, $Zn^{2+}$이 Sm/Nd와 Er/Sm이 분리인자를 개선하는데 가장 적당한 보유이온임을 규명하였다. 용리시킬 때 온도의 영향은, 보유이온에 따라 매우 다양하였으며, 온도를 상승시킬 때 분배비는 감소하였다. 그러나 분리인자는 항상 증가하지 않았으며 보유이온이$Ce^{3+}$일 때 온도를 상승시켜 보니, Nd/Pr, Sm/Nd의 분리인자가 증가하였고, 보유이온이 $Zn^{2+}$일 때 온도를 상승시켜 보니 Er/Sm의 분리인자가 증가함을 확인하였다.

• Bulletin of the Korean Chemical Society
• /
• 제12권5호
• /
• pp.499-504
• /
• 1991

EPR spectra of the high $T_c$ superconductor $YBa_2Cu_3O_{7-y}$ (YBCO) doped with $Pd^{2+} or Zn^{2+}$ have been measured at several temperatures and dopant concentrations. The spectral intensity of $YBa_2({Cu_{1-x}}{Pd_x})_3O_{7-y}$ is proportional to the dopant concentration. The behavior of $YBa_2(Cu_{1-x}Zn_x)_3O_{7-y}$ is quite different: the spectral intensity remains almost constant up to x=0.10 and then increases rapidly above x=0.10. The results are interpreted in terms of localized and antiferromagnetically spin-paired d holes in both CuO chain and planes. The $Pd_{2+}$ ion substitutes on the CuO chain consisting of "CuOCu dimers", and a $Cu_{2+}$ ion with an unpaired spin is gene rated for each $Pd_{2+}$ ion substituted. On the other hand, $Zn_{2+}$ substitutes on the CuO planes, and all or most of the spins in the two-dimensional plane manage to pair up in the region of low dopant concentration. When the dopant concentration exceeds a certain limit, it becomes more difficult for the spins to find partners, and the number of unpaired spins increases rapidly with increasing dopant concentration. The $Zn_{2+}$ ion is more effective than the $Pd_{2+}$ ion in suppressing the superconductivity of YBCO. This is attributed to the fact that $Zn_{2+}$ substitutes on the CuO planes which are mainly responsible for the superconductivity, while $Pd_{2+}$ substitutes on the CuO chain which is of secondary importance in the superconductivity.

• Bulletin of the Korean Chemical Society
• /
• 제21권4호
• /
• pp.393-400
• /
• 2000

2,2￠-Dihydroxyazobenzene (DHAB) was attached to poly(ethylenimine) (PEI) to obtain DHAB-PEI. Spectral titration revealed that uranyl, Fe(III), Cu(II), and Zn(II) ion form 1 : 1-type complexes with DHAB attached to PEI. Formation constants for the metal complexes formed by the DHAB moieties of DHAB-PEI were mea-sured by using various competing ligands. The results indicated thatthe concentrations of uranyl, Fe(III), and Cu(II) ions can be reduced to 10 -16 -10 -23 M at p 8 with DHAB-PEI when the concentration of the DHAB moiety is 1 residue M. By using cyanuric chloride as the coupling reagent, DHAB-PEI was immobilized on Sephadex G-25 resin to obtain DHAB-PEI-Seph. Binding of uranyl,Fe(III), Cu(II), and Zn(II) ion by DHAB-PEI-Seph was characterized by using competing ligands. A new method has been developed for characteriza-tion of metal sequestering ability of a chelating resin. Formation constants and metal-binding capacity of two sets of binding sites on the resin were estimated for each metal ion. DHAB-PI-Seph was applied to recovery of metals such as uranium,Fe, Cu, Zn, Pb, V, Mn, and W from seawater. The uranium recovery from seawaterby DHAB-PEI-Seph does not meet the criterion for economical feasibility partlydue to interference by Fe and Zn ions. The seawater used in the experiment was contaminated by Fe and Zn and, therefore, the efficiency of uranium extractionfrom seawater with DHAB-PEI-Seph could be improved if the experiment is carried out in a cleaner sea.

• 한국재료학회지
• /
• 제29권8호
• /
• pp.505-510
• /
• 2019

Zn-ion supercapacitors (ZICs) show high energy densities with long cycling life for use in electronic devices. Porous Zn electrodes as anodes for ZICs are fabricated by chemical etching process using optimized conditions. The structures, morphologies, chemical bonding states, porous structure, and electrochemical behavior are examined. The optimized porous Zn electrode shows a root mean square of roughness of 173 nm and high surface area of $153{\mu}m^2$. As a result, ZIC using the optimized porous Zn electrode presents excellent electrochemical performance with high specific capacitance of $399F\;g^{-1}$ at current density of $0.5A\;g^{-1}$, high-rate performance ($79F\;g^{-1}$ at a current density of $10.0A\;g^{-1}$), and outstanding cycling stability (99 % after 1,500 cycles). The development of energy storage performance using synergistic effects of high roughness and high surface area is due to increased electroactive sites by surface functionalization of Zn electrode. Thus, our strategy will lead to a rational design and contribute to next-generation supercapacitors in the near future.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.747-751
• /
• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• 한국전기전자재료학회논문지
• /
• 제23권1호
• /
• pp.14-17
• /
• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• 한국진공학회지
• /
• 제18권5호
• /
• pp.384-389
• /
• 2009

ZnO는 육방정계결정구조의 물질로서 3.37 eV의 넓은 띠 간격과 60 meV의 큰 exciton 결합에너지에 따른 높은 효율의 자외선발광으로 짧은 파장의 빛 (녹, 청, 자외선)을 내는 LED (Light Emitting Diode) 분야에서 관심을 기울이고 있는 물질이다. LED제작을 위해서는 n형의 ZnO와 p형의 ZnO가 필요하지만 기본적으로 ZnO은 n형이므로 신뢰성 있는 p형 ZnO박막을 제작하기 위한 노력이 기울여지고 있다. 본 연구에서는 ALD (Atomic Layer Deposition)로 제작된 ZnO박막에 20 keV의 에너지를 갖는 질소이온을 $10^{13}{\sim}10^{15}ions/cm^2$로 조사한 후 Hall 효과 측정장치를 이용하여 질소이온 조사에 따른 전기적 특성변화를 조사하였다.

• Archives of Pharmacal Research
• /
• 제19권3호
• /
• pp.178-182
• /
• 1996

Using superoxide dismutase (SOD)-deficient mutants of Saccharomyces cerevisiae, the oxidative stresses induced by 0.1 mM of copper ion $(Cu^{++})$ was studied. In aerobic culture condition, yeasts lacking MnSOD (mitochondrial SOD) showed more significant growth retardation than CuZnSOD (cytoplasmic SOD)-deficient yeasts. However, not so big differences in growth pattern of those mutants compared withwild type were observed under anaerobic condition. It was found that, under aerobic condition, the supplementation of 0.1 mM copper ioh:(Cu") into culture medium caused the remarkable increase of CuZnSOD but not so significant change in MnSOD. It was also observed that catalase activities appeared to be relatively high in the presence of copper ion in spite of the remarkable reduction of glutathion peroxidase in CuZnSOD-deficient yeasts, but the slight increments of catalase and glutathion peroxidase were detected in MnSOD-deficient strains. It implies that the lack of cytoplasmic SOD could be compensated mainly by catalase. However, these phenomena resulted in the significantincrease of cellular lipid peroxides content in CuZnSOD-deficient yeasts and the slight increment of lipid peroxides in MNSOD-deficient cells. In anaerobic cultivation supplementing copper ion, the cellular enzyme activities of catalase and glutathion peroxidase in SOD-deficient yeasts were slightly increased without any significant changes of lipid peroxides in cell membrane. It suggests that a little amount of free radicals generated by copper ion under anaerobic condition could be sufficiently overcome by catalase as well as glutathion peroxidase.dase.

• Applied Science and Convergence Technology
• /
• 제23권6호
• /
• pp.366-370
• /
• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Applied Science and Convergence Technology
• /
• 제24권6호
• /
• pp.242-244
• /
• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.