• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.51-54
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• 2008

In this study, we investigated variations in undoped ZnO thin film properties with working pressure, $O_2$/Ar ratio, and annealing ambient. Higher vacuum pressure during deposition was observed to bring about slower growth rate resulting in samples with better crystallinity as well as hole generation efficiency through formation of shallower oxygen interstitial. Given that $O_2$/Ar ratio is greater than unity, O provided from the ambient to ZnO during annealing was found to preferably situate at interstitial sites. When He was used for the second annealing, significant changes were not observed. On the other hand, O ambient caused increased density of oxygen interstitial, thereby making the film more intrinsic-like high resistivity ZnO.

• Journal of Magnetics
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• v.1 no.1
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• pp.19-23
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• 1996

In the present study, the $Sm_2Fe_{17}N_x$-type interstitial materials have been prepared by reaction between Nb-free or Nb-containing $Sm_2Fe_{17}$-type alloy and $N_2$ gas. Nitrogenation behaviour of the $Sm_2Fe_{17}N_x$-type material and disproportionation characteristics of the nitrogenated materials have been studied by means of differential thermal analysis (DTA) and thermopiezic analysis (TPA). Magnetic properties of the produced $Sm_2Fe_{17}N_x$-type interstitial materials were characterised in vibrating sample magnetometer (VSM) or thermomagnetic analyser (TMA). Epoxy-bonded or Zn-bonded $Sm_2Fe_{17}N_x$-type magnets were prepared, and their magnetic properties were investigated. It has been found that nitrogenation kinetics of the Sm2Fe17Nx-type alloy is improved significantly by the Nb-substitution for Fe in the alloy. The Nb-substitution is also found to enhance thermal stability of the $Sm_2Fe_{17}N_x$-type interstitial material. Hard magnetic properties of the interstitial materials produced from Nb-free orNb-containing alloy is high enough (intrinsic coercivity : over 7 kOe) for application as bonded permanent magnets. The good hard magnetic properties of the interstitial material are maintained in the epoxy-bonded magnet. Intrinsic coercivity of the Zn-bonded magnets is improved significantly as post-bonding annealing time increases.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.242-244
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• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Economic and Environmental Geology
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• v.30 no.4
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• pp.341-352
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• 1997

Retention ponds have been dug along some of the motorways in France to minimize environmental pollution by keeping pollutants from spreading over the surrounding area. In order to study heavy metal pollution and diagenetic behaviour of sediments, eight core samples were collected from the bottom of a retention pond located along the A-71 motorway in Sologne. The metal concentrations in interstitial waters and extractable metal concentrations in sediment layers using sequential chemical extraction method were determined. The depth distributions of Pb, Zn and Cd concentrations in interstitial water and particulate sediments were studied, and distribution coefficients (KD) were also determined to investigate the environmental mobility of these elements. In addition. the index of geoaccumulation and the Fe-normalized enrichment factor were calculated to differentiate the natural accumulation from the anthropogenic pollution. The vertical concentration profiles of heavy metals in core sediments indicate that surface enrichments (0~2 cm) of Pb, Zn, Cd and organic carbon were always observed at each core sample, due to the early diagenesis. However, the major factor contributing to the accumulation of Cd at the sediment surface is attributed to the dissolution of Cd from polluted roadside soil during periods of rainstorms and its subsequent redeposition on the sediment surface after being carried to the retention pond. A comparison of the KD values indiactes that a decrease in the KD values for Pb and Zn was observed with depth while KD values for Cd increase. According to the KD values. the relative mobility of studied metals was determined as following: Mn>Zn>Cd>Pb, for the upper layer, and Mn>Cd>Zn>Pb, for the lower layers.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.24-27
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• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.7
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• pp.712-720
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• 2008

Sediment and interstitial water samples from ten lagoons in the Northeastern coastal part of South Korea were analyzed to obtain the concentrations of metals and inorganic ligand. These data, coupled with pH and ionic strength, were used to compute the aqueous speciation of the metals in the interstitial water using the MINTEQA2 equilibrium program. The K and Na were almost entirely present as the free aqua ions, but Co, Cd, Ni, Pb and Zn were existed as various metal-ligand complexes. Metals such as Al, As, and Cr formed 3$\sim$4 metal-ligand complexes. In the interstitial water with high chloride concentrations, almost all of the metals were dominated by free aqua ions. Metals of Cd, Co, Ni, Pb and Zn were bound as chloride-metal complexes of the type M$^{x+}$ + xCl$^-$, and Fe, Mn and Mg were dominated by sulfate equilibria(M$^{2+}$ + SO$_4{^{2-}}$). Hg(II) was speciated as HgCl$_2$(aq), HgCl$_3{^-}$ and HgCl$_4{^-}$. However, in the interstitial water with low chloride concentrations, Hg(II) and Cd(II) were existed as chloride-metal complexes, metals of Cu, Mg, Mn, Ni, Pb and Zn were dominated by sulfate equilibria, and the speciation of Fe(II) was bound as Fe(OH)$_2{^+}$, Fe(OH)$_3$(aq). However, Al, As and Cr were dominated by hydroxy-metal and oxide-metal species in nearly all of the lagoons.

• Economic and Environmental Geology
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• v.40 no.5
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• pp.587-604
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• 2007

In order to investigate the vertical variations and speciations of trace elements, and their correlations in Hoidong reservoir, sediment cores (21-41 cm below surface) and interstitial water samples were collected from five sampling locations. The total average concentrations of trace metals in sediment core samples were $232{\pm}30.8mg/kg$ for Zn, $119{\pm}272mg/kg$ for Cu, $58.4{\pm}4.1mg/kg$ for Pb, $15.7{\pm}3.3mg/kg$ for Ni and $1.6{\pm}0.3mg/kg$ for Cd. The total concentrations of trace metals in core sediments generally decreased toward the center of the Hoidong reservoir. The total concentrations of Mn, Pb and Zn decreased with depth for all the sample locations, while Cu and Fe concentrations increased. The trace metal concentrations of interstitial water sample were in the order of Fe>Mn>Cu>Zn, but Cd, Ni and Pb were not detected. The concentrations of Zn, Cu, Fe and Mn in the interstitial water samples showed a tendency of increasing toward the bottom of the core, suggesting a possible upward diffusion. This migration of trace metals may lead to their transfer to the sediment-water interface. These trace elements would be subsequently fixed onto amorphous Fe and Mn-oxides and carbonates in the topmost layer of sediment. Based on the $K_D$ values, the relative mobilities of the studied metals were in the order of Mn>Cu>Zn>Fe. Geochemical partitioning confirmed that surface enrichment by trace metals mainly resulted from a progressive increase of the concentrations in the fractions II and III. Copper, Fe, Mn and Zn concentrations of interstitial water were closely correlated with their exchangeable fractions of sediments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.107-108
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• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.