• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.27-29
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• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 반도체디스플레이기술학회지
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• 제13권1호
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• pp.91-95
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• 2014

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

• 한국재료학회지
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• 제2권5호
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• pp.360-365
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• 1992

Ga 첨가효과 및 Sputter 제조조건이 전기적 특성에 미치는 영향을 고찰하기 위해 ZnO분말과 G$a_2O_3$분말을 소결하여 타겟트를 제조하여 Sputter법으로 유리기판에 Ga-doped ZnO 다결정박막을 제조하였다. RF 전력밀도, 아르곤 개스압력 및 Ga 함유량등을 최적화한 후 제조한 투명한 Ga-doped ZnO 박막의 비저항은 1$0^{-3}$ohm-cm이며, undoped 및 Ga-doped ZnO 박막의 전자농도는 각 $10^{18}$, $10^{21}$/c$m^2$이였다. 공기와 질소분위기에서 열처리를 행하였을 때 Ga-doped ZnO 박막의 비저항은 $10^{2}$ order 증가하였다. 가시광영역의 투과율은 80% 이상이였으며, Ga 함유량이 증가하면 optical band gap도 넓어졌다.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• 한국재료학회지
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• 제19권8호
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• pp.417-420
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• 2009

This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparent ohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance of the phosphorus doped ZnO exceeds 90% in the region of 440 nm to 500 nm. The specific contact resistance of the phosphorus doped ZnO on p-GaN was determined to be $7.82{\times}10^{-3}{\Omega}{\cdot}cm^2$ after annealing at $700^{\circ}C$. GaN LED chips with dimensions of $300\times300{\mu}m$ fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7 V increase in forward voltage under a nominal forward current of 20 mA compared to GaN LED with Ni/Au Ohmic contact. However, the output power increased by 25% at the injection current of 20 mA compared to GaN LED with the Ni/Au contact scheme.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.24-27
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• 2004

ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.