• 한국재료학회지
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• 제16권7호
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• pp.445-448
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• 2006

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

• 한국세라믹학회지
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• 제37권1호
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• pp.1-5
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• 2000

Cathodoluminescence(CL) properties of ZnO:Zn green phosphor were investigated. ZnO:Zn phosphor was synthesized by varying reducing agents and firing temperatures. ZnS, charcoal and 5% H2 gas mixed with 95% N2 gas(5H2-95N2) were used as the reducing agent and atmosphere. The highest CL intensity of ZnO:Zn phosphor was observed under the condition of 5H2-95N2 atmosphere and firing temperature of 90$0^{\circ}C$ for 1h. Charocal and ZnO as reducing agents in the syntehsis of ZnO:Zn phosphor exhibited about 60% and 40%, respectively, of the CL intensity obtained with 5H2-95N2 atmosphere.

• 대한화학회지
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• 제50권6호
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• pp.440-446
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• 2006

액체상태에 분산된 ZnO 분말을 레이저 ablation 시켜 ZnO 나노입자를 생성하였고, 계면활성제에 따른 생성된 나노입자의 특성을 비교하였다. 생성된 나노 입자는 UV-VIS 흡광 스펙트럼과 X-ray 회절 스펙트럼으로 순수한 ZnO 결정 상태를 나타냄을 확인하였으며, 전자투과 현미경 사진으로 나노입자의 크기, 크기 분포 및 모양을 관찰하였다. 순수한 물에서 얻어진 ZnO 나노입자의 밴드 갭 에너지는 3.35 eV로 bulk ZnO와 비슷한 값을 나타내었으며, 평균 크기는 27 nm로 막대모양의 입자들이 주로 생성되었다. SDS 용액에서 얻어진 ZnO 나노입자는 입자 크기가 평균 28 nm인 주로 구형에 가까운 형태를 가졌으며 CTAB 용액에서 나노입자는 막대 모양의 형태가 많으며 평균 크기가 40 nm 이었다. CTAB 용액에서 만들어진 ZnO 나노입자는 SDS 용액에서 만들어진 ZnO 나노입자 보다 더 안정하였다. 이러한 계면활성제에 따른 ZnO 나노입자의 크기 및 모양, 그리고 안정성의 차이는 ZnO와 계면활성제 사이의 전하 극성 차이로 인한 정정기적 인력과 용매화 차이로 설명할 수 있었다.

• 한국결정성장학회지
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• 제16권2호
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• pp.59-65
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• 2006

Al이 첨가된 ZnO(ZnO : Al) 박막과 F이 첨가된 ZnO(ZnO : F) 박막을 sol-gel 법을 이용하여 glass 기판위에 코팅하였다. 공통적으로 (002)면의 c-축 배향성을 보였지만 I(002)/[I(002) + I(101)]와 FWHM(full width at half-maximum) 값은 차이를 보였다. 특히 입자크기에 있어서는 ZnO : Al 박막에서 첨가농도가 증가함에 따라 입자크기가 감소한 반면 ZnO : F 박막에서는 F 3 at%까지 입자크기가 증가하다가 그 이후로 다시 감소하는 경향을 보였다. 진기적 성질의 측정을 위해서 Hall effect measurement를 이용하였는데 ZnO : Al 박막의 경우 Al 1 at%에서 비저항이 $2.9{\times}10^{-2}{\Omega}cm$ 이었고 ZnO : F에서는 F 3 at%에서 $3.3{\times}10^{-1}{\Omega}cm$의 값을 보였다. 또한 ZnO : F 박막은 ZnO : Al 박막에 비해서 캐리어 농도는 낮았지만(ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) 이동도에 있어서 상당히 큰 값(ZnO : Al $45cm^2/Vs$ ZnO:F $495cm^2/Vs$)을 보였다. 가시광선 영역에서의 평균 광투과도에 있어서는 ZnO : Al 박막에서 $86{\sim}90%$의 값을 보였지만 ZnO : F에서는 $77{\sim}85%$로 상대적으로 낮은 광투과도를 나타내었다.

• 한국결정성장학회지
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• 제13권5호
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• pp.230-234
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• 2003

GaAs (001) 기판과 완충층을 사용한 ZnTe/GaAs(001) 기판 위에 고농도의 Zn 조성을 가지는 $Cd_xZn_{1-x}$Te/GaAs, $Cd_xZn_{1-x}$Te/ZnTe/GaAs 에피층 구조를 성장시켰다. 이때 $Cd_xZn_{1-x}$Te 에피층에서의 CuPt형의 규칙상 형성, 미세구조적 특성과 광발광특성을 X-선회절과 전자회절상, 고분해능 투과전자현미경, 그리고 저온 광발광 측정 장치를 이용하여 연구하였다.

• 한국주조공학회지
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• 제36권4호
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• pp.117-125
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• 2016

The effects of the Zn content on the microstructure and corrosion behavior in 1M NaCl solution were investigated in Mg-(0~6)%Zn casting alloys. The MgZn phase was scarcely observed in the Mg-1%Zn alloy, while the Mg-(2~6)%Zn alloy consisted of ${\alpha}$-(Mg) and MgZn phases. With an increase in the Zn content, the amount of the MgZn phase was gradually increased. Immersion and electrochemical corrosion tests indicated that the Mg-1%Zn alloy had the lowest corrosion rate among the alloys, and a further increase in the Zn content resulted in the deterioration of the corrosion resistance. Microstructural examinations of the corroded surfaces and EIS analyses of surface corrosion films revealed that the best corrosion resistance at 1%Zn was associated with the absence of MgZn phase particles in the microstructure and the contribution of Zn element to the formation of a protective film on the surface. A micro-galvanic effect by the MgZn particles led to the increased rate of corrosion at a higher Zn content.

• 한국표면공학회지
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• 제36권5호
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• pp.379-385
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• 2003

The surface morphology, the glossiness and the hardness of Zn-Cr and Zn-Cr-X(X:Co, Mn) alloy electrodeposits were investigated by using chloride bath with EDTA additive and flow cell system. The surface morphology of Zn-Cr alloy and Zn-Cr-Mn alloy changed from fine needle shape crystalline structure to colony structure of fine granular crystallites with increasing current density in the range of 20-100 $A/dm^2$. The surface morphology of Zn-Cr-Co alloy deposited from low Co concentration bath(2.5-10 g/$\ell$) was similar to that of Zn-Cr alloy, while that of Zn-Cr-Co alloy deposited from high cobalt concentration bath was fine granular crystalline structure in the same range of current density. The glossiness of Zn-Cr and Zn-Cr-Mn alloy increased noticeably with increasing current density, while that of Zn-Cr-Mn alloy decreased with increasing Mn concentration of bath in high current density region. The glossiness of Zn-Cr-Co alloy deposited from low Co concentration bath increased with current density while that of the alloy from high Co concentration bath decreased with increasing current density. The hardness of Zn-Cr and Zn-Cr-X alloy increased noticeably with current density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.108-109
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• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• 한국주조공학회지
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• 제30권4호
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• pp.137-141
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• 2010

The effects of Zn amounts on the castability and tensile properties of Al-Zn-Mg-Cu alloys were investigated for development of high strength die casting aluminium alloys. Al-Zn-Mg-Cu alloys with 3.5% Zn showed high cast cracking tendency and poor mold filling behaviour. Al-Zn-Mg-Cu alloys with 5wt% Zn and 7wt% Zn had the tensile strengths of 300~400MPa and the elongations of 2~18%. The effect of Zn on the tensile strength of Al-Zn-Mg-Cu alloys was insignificant, but Al-Zn-Mg-Cu alloy with high Zn amount had lower elongation.