• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.338-341
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• 2006

This paper presents the leakage current characteristics of ZnO varistors exposed to the $8/20{\mu}s$ lightning impulse currents as functions of the number of injection and amplitude of impulse currents. The surge simulator system ECAT that can generate $8/20{\mu}s$ impulse currents with a peak short-circuit of $5[kA_p]$ was used. Leakage currents flowing through ZnO varistors subjected to the $8/20{\mu}s$ impulse currents were measured under 60 Hz AC voltages. The trend curves of resistive leakage current of ZnO varistors were analytically calculated.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.572-577
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• 1996

Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.477-477
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• 2011

In this paper, we synthesize ZnO wire on Si substrate by catalyst-free thermal chemical vapor deposition (CVD). Each ZnO wire is grew up at different condition such as temperature and O2 flow rate. The Young's modulus of individual ZnO wires were estimated using quasi-static and dynamic measurements, as well as resonance frequency measurements. Using this system, current-voltage characteristics of each ZnO wire structure fabricated on a trench were measured. A new concept of electromechanical device structure combined with the piezoelectric effect of ZnO will be suggested in the end of this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.216-217
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• 2008

Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.39-42
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• 2008

[ $AB_2X_4$ ](A, B=Transition Metal, X=O, S, Se) are cubic spinel normal ferrimagnets, in which M ions occupy the tetrahedral sites and Cr ions occupy the octahedral sites. Recently, they have been investigated for behaviour of B site ions and A-B interaction. Polycrystalline $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$ compound was prepared by wet-chemical process. The ferrimagnetic transition was observed around 90K. $M\"{o}ssbauer$ absorption spectra at 4.2K show that the well-developed two sextets are superposed with small difference in hyperfine fields($H_{hf}$). The hyperfine fields of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ and $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$ were determined to be 488, 478 kOe and 486, 468 kOe, respectively. We notice that the one of the magnetic hyperfine field values changes with Zn ion substitution. These results suggest the incommensurate states and spin-reorientation temperature($T_S=18K$) changes with Zn ions substitution below spin-reorientation temperature($T_S=28K$) of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.224-228
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• 2004

Respectively the powder made of ZnO added $SnO_2$ was prepared by coprecipitation method and the thick film gas sensor was fabricated by screen-printing technique, The morphology and phase of the powder and film was investigated by SEM and XRD. The specific area of the particle was linearly increased with ZnO contents. Target gas was di(propylene glycol) methylether ($CH_3$($OC_3$$H_{6}$ )$_2$OH, DPGME), which is simulant gas of blister gas. The gas sensing characteristics for DPGME were examined with flow type measurement system and the concentrations of target gas were controlled from 500 ppb to 1500 ppb. ZnO (2 wt%) added $SnO_2$ showed maximum sensitivity to DPGME at $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of Environmental Health Sciences
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• v.20 no.1
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• pp.62-67
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• 1994

Introduction : Recently, water and environmental pollution becomes serious social problem and high technology makes this pollution accelerate. Hydrogen sulfide, the main subject of our research, is one of the most dangerous air pollutant like SO$_x$ and NO$_x$. The major contaminant in coal gasification is H$_2$S, which is very toxic, hazardous and extremely corrosive. Therefore, control of hydrogen sulfide to a safe level is essential. Although commercial desulfurization process called liquid scrubbing is effective for removal of H$_2$S, it has drawbacks, the loss of sensible heat of the gas and costly wastewater treatment. Many investigations are carried out about high-temperature removal ol H$_2$S in hot coal-derived gas using metal oxide or mixed metal qxide sorbents. It was reported that ZnO was very effective sorbent for H2S removal, but it has big flaw to vaporize elemental zinc above 600\ulcorner \ulcorner As alternative, metal oxides such as CaO, $Fe_2O_3$, TiO$_2$ and CuO were added to ZnO. Especially, different results are reported for $Fe_2O_3$ additive. Tamhankar et al. reported SiO$_2$ with 45 wt% $Fe_2O_3$ sorbent is favorable for removal of H$_2$S and regeneration.