• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1099-1106
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• 1997

In the present study, the effect of TiB2 addition on the sintering behavior of ZrB2 ceramics was studied with hot pressing under Ar atmosphere. Hot pressing experiments were carried out in graphite dies at the 1$700^{\circ}C$, 180$0^{\circ}C$ under Ar atmosphere. The sintering density increased with increasing TiB2 contents. With the addition of 10wt% TiB2 almost theoretical density could be achieved by hot-pressing at 180$0^{\circ}C$. Zr-Ti-Fe-B compound in liquid phase was observed from the EDS and WDS analysis. It was considered that sinterability was enhanced due to the mass transfer through liquid phase formed at the sintering temperature. In addition of TiB2, transition metal of groups IV, substitutional solid solution could be formed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.87-87
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• 2009

The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.247-253
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• 2012

In this study, two pretreatment methods were used to improve the sinterability of zirconium diboride ($ZrB_2$). As a mechanical treatment, as-received $ZrB_2$ powder was crushed using SPEX mill from an average size of $2.61{\mu}m$ to $0.35{\mu}m$. As a chemical treatment, oxygen contents of $ZrB_2$ powder were decreased from 4.20 wt% to 2.22 wt% using a dilute hydrofluoric solution. The relative density of sintered $ZrB_2$ increased with decreasing particle size and oxygen contents. But it is considered that particle size is more effective than oxygen contents for $ZrB_2$ densification. Through the two pretreatment processes, we produced sintered $ZrB_2$ ceramic with a full density without sintering additives. The sinterability of $ZrB_2$ was improved by using mechanical and chemical pretreatment methods.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.787-791
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• 1999

TiB$_2$powders were prepared by mechanical alloying, and the effect of Zr and Ta substitution for Ti was investigated. It was possible to produce titanium diboride phase by mechanical alloying titanium and boron elemental powders for 280 hours. The amorphization reaction, a common process which occurs during mechanical alloying, has not been found. When zirconium of which atomic radius was larger than that of titanium was substituted for Ti, the alloying time was greatly reduced. On the contrary, substitution of tantalum for titanium prolonged the alloying time because of the less negative heat of formation of tantalum diboride than that of titanium diboride.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2002.05a
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• pp.149-154
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• 2002

산업 부문 중 고온을 이용하는 에너지 다소비 부문인 제철ㆍ제강업, 요업, 화학공업, 및 금속공업 등에 있어서 고온 예열의 낭비 및 잦은 부품의 교체로 인해 가격의 상승, 국제 경쟁력의 약화 및 에너지 낭비가 초래되고 있다. 특히 알루미늄, 동 등의 금속 용해로에 사용되는 로재의 경우 금속재를 사용할 경우 고온에서의 사용이 제한적이며 부식 등에 의한 잦은 교체로 정확한 품질제어가 불가능하다.(중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.217-222
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• 2010

Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.308-317
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• 2012

Reactive processing, such as reactive hot pressing (RHP) and reactive spark plasma sintering (R-SPS), is effective densification method to prepare $ZrB_2$-based ultra high temperature ceramics (UHTCs). The present paper reviewed some typical reactive processing of $ZrB_2$-based UHTCs. All the reactions from the starting materials in the reactive processing are thermodynamically favorable, which generate enough energy and driving force for the densification of the final products under a relatively low temperature. Besides, compared with non-reactive processing, anisotropic $ZrB_2$ grains, such as $ZrB_2$ platelets, can only be obtained in the reactive processing, resulting in an improvement of the mechanical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.105-105
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. $SiC-ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in vacuum or argon gas atmosphere. The relative density of SiC+40[vol.%]$ZrB_2$ composites reveal high 99.57[%] in argon gas atmosphere and pressure 50MPa.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1474-1480
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• 2013

Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.