• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.279-279
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• 2007

Synthesis and dielectric properties of glass-ceramic composites with zinc borosilicate glass(here after ZBS glass) were investigated as functions of $ZnAl_2O_4$ phase synthesis method, glass addition (50~60 vol%) and sintering temperature ($600{\sim}950^{\circ}C$ for 2 hrs). The 50 vol% ZBS glass-$Al_2O_3$ and 60 vol% ZBS glass-$ZnAl_2O_4$ ensured successful sintering below $900^{\circ}C$. But the composition of 100-x-y vol% ZBS glass-x vol% $Al_2O_3-y$ vol% ZnO exhibited poor sinterability below $900^{\circ}C$ and the swelling phenomenon occurred in this composite with the large amount of ZBS glass. The sintering behavior of Glass-ceramic composites was affected by the crystallization of $ZnAl_2O_4$ which was formed by the reaction between ZBS glass and $Al_2O_3$. Dielectric constant (${\varepsilon}_r$), $Q{\times}f$ value and temperature coefficient of resonant frequency (${\tau}_f$) of the composite with 50 and 60 vol% ZBS glass contents demonstrated $ZBS-Al_2O_3({\varepsilon}_r=5.7)$, $ZBS-ZnAl_2O_4({\varepsilon}_r=5.8)$ which is applicable to substrate requiring an low dielectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.363-364
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• 2005

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 3종류 의 glass를 선정하고 filler로 $Al_2O_3$ 와 $TiO_2$를 사용하여 glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 lead-borosilicate(PBS), zinc-borosilicate(ZBS), bismuth-borosilicate(BBS) glass 조성을 사용하였고 1100~$1400^{\circ}C$에서 melting시킨 후 quenching하여 frit화하였다. $Al_2O_3$와 $TiO_2$ filler에 10~50 vol%로 glass frit을 각각 혼합한 후 600~$950^{\circ}C$에서 2시간 동안 소결한 결과 50 vol% glass frit 일 때 $900^{\circ}C$ 이하에서 소성이 가능하였다. 유전특성은 $900^{\circ}C$에서 $Al_2O_3$-50vol%PBS($\varepsilon_{r}$=8.8, $Q{\times}f_o$=4,900, $\tau_f$=-24), $Al_2O_3$-50vol% ZBS($\varepsilon_{r}$=5.7, $Q{\times}f_o$=17,800, $\tau_f$=-21), $Al_2O_3$-50vol%BBS($\varepsilon_{r}$=11.1, $Q{\times}f_o$= 2,080, $\tau_f$=-48), $TiO_2$-50vol%PBS($\varepsilon_{r}$=18.6, $Q{\times}f_o$=3,800, $\tau_f$=+135), $TiO_2$-50vol%ZBS($\varepsilon_{r}$=36.4, $Q{\times}f_o$= 7,500, $\tau_f$=+159), $TiO_2$-50vol%BBS($\varepsilon_{r}$=56.4, $Q{\times}f_o$=520, $\tau_f$=+119)을 나타내었다. 따라서 LTCC용 기판재료 및 마이크로파 유전체로 응용이 가능한 것으로 확인되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.415-415
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• 2012

ICP (RF) 열 플라즈마 분말 합성법은 초고온 열플라즈마(~10,000 K) 속으로 원료물질을 투입한 뒤, 용융, 기화 및 재합성의 과정을 거쳐 초미분(<1 ${\mu}s$)을 합성하는 방법으로 고출력 시스템의 경우 고온/고 엔탈피 열 유동을 통한 고융점 및 저융점 복합물질의 동시 기화에 의한 물질 조성이 제어된 나노 복합체의 대량 합성이 가능할 것으로 기대되고 있다. 본 연구에서는 전북대학교 고온플라즈마 응용연구센터의 60&200 kW의 고출력 ICP (RF) 열 플라즈마 시스템을 이용하여 LTO (Lithium Titanium Oxide)와 IZTO (Indium Zinc Tin Oxide), Barium Borosilicate Glass (K2O-BaO-B2O3-SiO2)의 다성분계 나노 복합체를 합성하였으며, FE-SEM, TEM, XRD, ICP-OES를 이용하여 그 특성을 분석하였다.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.107-114
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• 1993

Zinc-Borosilicate(ZnO 65.0wt%, B2O3 21.5wt%, SiO2 9.0wt%, PbO or tiO2 4wt%) passivation glasses were studied using differential thermal analysis(DTA), scanning electron microscopy(SEM) observations, X-ray diffraction (XRD) patterns and measurement of thermal expansion coefficients. Passivation glasses containing 4wt% TiO2 and 4wt% PbO had crystallization temperature of 680~73$0^{\circ}C$ and major crystalline phases were identified by X-ray diffraction as $\alpha$-ZnO.B2O3 and $\alpha$-5ZnO.2B2O3. As increasing firing temperature, the size of crystalline phases increased by observation of SEM. The thermal expansion coefficient of crystallized glass frits was smaller than that of unfired glass.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.59-63
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• 2002

Zinc-Magnesium borosilicate 유리에 CaF$_2$입자를 충진재로 첨가하여 혼합체의 소결거동, 결정화 거동 및 최종 소결체의 마이크로파 유전특성을 측정하였다. CaF$_2$첨가는 유리의 점도를 감소 시켜 결정화 및 수축개시온도를 감소시켰다. 이러한 CaF$_2$의 최대 첨가량은 주어진 유리조성에 있어서 15 vol. % 이었다. 이러한 소결성 및 결정화 개시온도의 변화는 모 유리와 CaF$_2$의 반응에 의한 결과로 보여지며 이 반응은 결정상의 변화나 이차상의 형성에는 영향을 미치지 않았다. 따라서 유전율 6.1에 품질계수가 40000GHz 인 CaF$_2$입자를 15 vol.% 첨가시 유전상수는 7.1에서 5.6로 품질계수는 2200에서 5000GHz로 유전특성이 향상되었고 소결온도는 75$0^{\circ}C$이었다.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.325-328
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• 2010

Varying quantities of a high-thermal-expansion glass, 50CaO-20ZnO-$20B_2O_3-10SiO_2$ (CZBS), were added to alumina and sintered at $875^{\circ}C$ for 2 h for low temperature co-firing ceramic (LTCC) applications. As the amount of glass addition increased from 40 wt% to 70 wt%, the apparent density of the sintered product increased from 88.8% to 91.5%, which was also qualitatively confirmed by microstructural observation. When the glass addition was very high, e.g., 70 wt%, an apparent formation of secondary phases such as $CaZn_2AlZnSiAlO_7$, $Ca_2Al(AlSi)O_7$, $Ca_2Al_2SiO_7$, $Ca_2ZnSi_2O_7$ and ZnO, was observed. Both the dielectric constant and the coefficient of thermal expansion increased with the glass addition, which was qualitatively consistent with the analytical models, while the experimental values were lower than the predicted ones due to the presence of pores and secondary phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.185-186
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• 2005

저온소결 Glass/Ceramic계 기판재료 조성으로 $Al_2O_3$, $SiO_2$, Cordierite, $Al_2O_3{\cdot}3SiO_2$의 4가지 filler에 zinc-borosilicate(ZBS) glass를 첨가하여 기판재료로의 사용가능성을 조사하였다. 4가지 filer에 ZBS glass를 30$\sim$50vol%첨가하여 $700\sim950^{\circ}C$에서 2시간 소결한 결과 40, 50vol%첨가 했을 때 900$^{\circ}C$에서 치밀한 소결체를 얻을 수 있었다. LSI칩 신호라인의 빠른 신호전달에 직접적인 영향을 주는 유전율은 기존의 $Al_2O_3$기관($\fallingdotseq$9.7)보다 저유전율 ($900^{\circ}C$에서 $Al_2O_3$-50vol%ZBS 5.7, $SiO_2$-50vol%ZBS 5.9, Cordierite-40vo1%ZBS 5.9, $Al_2O_3${\cdot}3SiO_2$-50vol%ZBS 4.9)을 나타내어 저온소결 기판재료로 사용이 가능함을 확인하였다.