• Journal of the Korean Ceramic Society
• /
• v.46 no.3
• /
• pp.313-316
• /
• 2009

A zinc borosilicate glass having a low softening temperature of $490^{\circ}C$ has been investigated as a protective layer for Ag patterns against chemical reactions with a $I^-/I_3^-$ electrolyte in dye-sensitized solar cells (DSSCs). A thick glass layer was prepared by the typical screen printing and firing processes to obtain a final thickness of ${\sim}5{\mu}m$. The chemical leaching performance of the glass layer in the electrolyte revealed that the reactive Ag pattern can be significantly protected by utilizing the low softening protective layer. The electrical resistance of the FTO-coated glass substrate was effectively maintained at a low value of ${\sim}27{\Omega}$ as long as the glass layer was well densified at a sufficiently high temperature of ${\sim}520^{\circ}C$. The transmittance of the layer was near 60%, depending on the firing temperature of the glass layer.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.729-731
• /
• 1998

Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V Curve as a function of firing condition, temperature and atmosphere were investigated. Under 100V applied, 1 minute, $700^{\circ}C$ firing temperature, and $O_2$ atmosphere, I can get the fine films $5.8{\mu}m$ thickness with Zinc borosilicate glass. As a result of investigation of glass films, it has been found that pre-firing and annealing play an important role to achieve uniform, fine, reliable glass deposition films and Glass/Silicon interlace.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.342-342
• /
• 2008

The low temperature sintering and microwave dielectric properties of ceramic/glass composites which were composed of ceramics in the $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ and zinc borosilicate glass/bismuth-zinc borosilicate glass were investigated with a view to applying the microwave dielectrics to low temperature co-fired ceramics. The $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ addition of 5 wt% ZBS and BZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, pyrochlore phase was observed in the all composition. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ with 5 wt% BZBS glasss demonstrated 70 as the dielectric constant ($\varepsilon_r$), 2,500 GHz as the Q$\times$f value, and -40 ppm/$^{\circ}C$ as TCF.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.313-314
• /
• 2006

$BiNbO_4$ ceramics were sintered under the presence of zinc-borosilicate(ZBS) glass and resultant microwave dielectric properties were investigated with a view to applying the composition to LTCC technology. The addition of 5~20 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. In general, increased addition of ZBS glass increased sinterability and temperature coefficient of resonant frequency(${\tau}_f$), but it decreased the dielectric constant(${\varepsilon}_r$) and quality factor($Q{\times}f_0$) significantly due to the formation of an excessive liquid. The sintered $BiNbO_4$ ceramics at $900^{\circ}C$ with 15 wt% ZBS glass demonstrated 25 in dielectric constant(${\varepsilon}_r$), 3,700 in quality factor($Q{\times}f_0$), and -32 $ppm/{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.8 no.1
• /
• pp.49-56
• /
• 2010

In the pyroprocessing of spent nuclear fuels, LiCl-KCl waste salt containing radioactive rare earth chlorides are generated. The radioactive rare earth oxides are recovered by co-oxidative precipitation of rare earth elements. The powder phase of rare eath oxide waste must be immobilized to produce a monolithic wasteform suitable for storage and ultimate disposal. The immobilization of these waste developed in this study involves a solid state sintering of the waste with host borosilicate glass and zinc titanate based ceramic matrix(ZIT). And the rare-earth monazite which synthesised by reaction of ammonium di-hydrogen phosphate with the rare earth oxides waste, were immobilzed with the borosilicate glass. It is shown that the developed ZIT ceramic wasteform is highly resistant the leaching process, high density and thermal conductivity.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.5
• /
• pp.187-190
• /
• 2023

In this study, antibacterial glasses were developed by the addition of CaO in ZnO-Na₂O-B₂O₃-SiO₂ glass system. The effect of the addition of CaO on the thermal properties, dissolution properties, surface zeta potential and antibacterial activity were analyzed. Differential thermal analysis (DTA) analysis was performed to analyze the thermophysical properties of 30ZnO-xCaO-20Na₂O-30B₂O₃-(20-x)SiO₂ (x = 0, 2, 4, 6, 8, 10 mol%). It was confirmed that the glass transition temperature decreased as the CaO content increased. The amount of released Zn²⁺ ions and surface zeta potential of glass samples increased with increasing CaO concentration. For these reasons, the antibacterial activity was dramatically improved. By the addition of CaO, we could successfully develop an antibacterial glass with 99.9 % antibacterial activity against both Escherichia coli and Staphylococcus aureus.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.208-209
• /
• 2006

Sinterability and microwave dielectric properties of the $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$(x=4, 6) system ceramics have been investigated as functions of zinc-borosilicate(ZBS) glass contents and amount of $Zn_{1/3}Nb_{2/3}O_2$ substitution with a view to applying the composition to LTCC technology. The addition of 25 wt% ZBS glass ensured successful sintering below $925^{\circ}C$. With increasing ZBS glass and $Zn_{1/3}Nb_{2/3}O_2$ contents increased dielectric constant and sinterability but addition ZBS glass decreased the quality factor significantly due to the formation of an excessive liquid and second phases. The sintered $Zr4(Zn_{1/3}Nb_{2/3})6TiO_4$ system ceramics at $925^{\circ}C$ with 25 wt% ZBS glass demonstrated 27.7 in dielectric constant (${\varepsilon}_r$), 3,850 m quality factor($Q{\times}f_0$), and +6 ppm/$^{\circ}C$ in temperature coefficient of resonant frequency($\tau_f$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.9
• /
• pp.855-861
• /
• 2006

Sinterability and microwave dielectric properties of $xZWO_{4}-(1-x)TiO_{2}$ ceramic systems with zinc-borosilicate glass and $TiO_{2}$ contents for LTCC(Low Temperature Co-fired Ceramics) were investigated. The addition of $3{\sim}10\;wt%$ ZBS glass ensured the sinterability below $900^{\circ}C$. In general, increasing ZBS glass content seemed to enhance the sinterability, but the quality factor($Qxf_{0}$) significantly decreased due to the formation of an excessive liquid and second phases. As for the addition of $TiO_{2}$, the dielectric constant(${\varepsilon}_{r}$) and temperature coefficient of resonant frequency(${\tau}_{f}$) showed to increase, while the quality factor($Qxf_{0}$) did not show an apparent change. The composition of $0.7xZnWO_{4}-0.3TiO_{2}$ ceramics sintered at $900^{\circ}C$ with 5 wt% ZBS glass demonstrated 21.6 in dielectric constant(${\varepsilon}_{r}$), 14,800 in quality factor($Qxf_{0}$), and $+5\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_{f}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.260-260
• /
• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.298-298
• /
• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).