• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.359-360
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• 2013

• Preventive Nutrition and Food Science
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• 제16권2호
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• pp.174-178
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• 2011

The cell permeability and cytotoxic effects of different-sized zinc oxide (ZnO) particles were investigated using a human colorectal adenocarcinoma cell line called Caco-2. Morphological observation by scanning electron microscopy revealed that three zinc oxides with different mean particle sizes (ZnO-1, 20 nm; ZnO-2, 90~200 nm; ZnO-3, $1\sim5\;{\mu}m$) tended to aggregate, particularly in the case of ZnO-1. When cytotoxicities of all three sizes of zinc oxide particles were measured at concentration ranges of $1\sim1000\;{\mu}g$/mL, significant decreases in cell viability were observed at concentrations of $50\;{\mu}g$/mL and higher. Among the three zinc oxides, ZnO-1 showed the lowest viability at $50\;{\mu}g$/mL in Caco-2 cells, followed by ZnO-2 and ZnO-3. The permeate concentration of ZnO-1 from the apical to the basolateral side in the Caco-2 model system after four hours was about three-fold higher than that of either ZnO-2 or ZnO-3. These results demonstrated that ZnO-1, with a 20 nm mean particle size, had poorer viability and better permeability in Caco-2 cells than ZnO-2 and ZnO-3.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.1-10
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• 2010

This is an overview paper reporting our most recent work on processing and microstructure of nano-structured oxides and their photoluminescence and photo-catalysis properties. Zinc oxide and related transition metal oxides such as vanadium pentoxide and titanium dioxide were produced by a combination of magnetron sputtering, hydrothermal growth and atmosphere controlled heat treatment. Special morphology and microstructure were created including nanorods arrays, core-brushes, nano-lollipops and multilayers with very large surface area. These structures showed special properties such as much enhanced photoluminescence and chemical reactivity. The photo-catalytic properties have also been promoted significantly. It is believed that two factors contributed to the high reactivity: the large surface area and the interaction between different oxides. The transition metal oxides with different band gaps have much enhanced photoluminescence under laser stimulation. Use of these complex oxide structures as electrodes can also improve the energy conversion efficiency of solar cells. The mixed oxide complex may provide a promising way to high-efficiency photo emitting materials and photo-catalysts.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Bulletin of the Korean Chemical Society
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• 제26권7호
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• pp.1109-1111
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• 2005

• Corrosion Science and Technology
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• 제10권2호
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• pp.43-46
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• 2011

Zinc consumption in a continuous galvanizing line is one of the highest operating cost items in the facility and minimizing zinc waste is a key economic objective for any operation. One of the primary sources of excessive loss of zinc is through the formation of top dross and skimmings in the coating pot. It has been reported that the top skimmings, manually removed from the bath, typically consist of more than 80% metallic zinc with the remainder being entrained dross particles ($Fe_2Al_5$) along with some oxides. Depending on the drossing practices and bath management, the composition of the removed top skimmings may contain up to 2 wt% aluminum and 1 wt% iron. On-going research efforts have been aimed at in-house recovery of the metallic zinc from the discarded top skimmings prior to selling to zinc recycling brokers. However, attempting to recover the zinc entrapped in the skimmings is difficult due to the complex nature of the intermetallic dross particles and the quality and volume of the recycled zinc is highly susceptible to fluctuations in processing parameters. As such, an efficient method to extract metallic zinc from top skimmings has been optimized through the use of a specialized thermo-mechanical process enabling a continuous galvanizing facility to conserve zinc usage on-site. Also, through this work, it has been identified that filtration of discrete dross particles has been proven effective at maintaining the cleanliness of the zinc. Future efforts may progress towards expanded utilization of filters in continuous galvanizing.

• 반도체디스플레이기술학회지
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• 제6권1호
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• pp.65-69
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• 2007

A design of experiments was applied in order to investigate the effect of processing variables in UV irradiation on the electrical/optical properties in indium-zinc oxide thin films, The processing variables, equivalently input variables are listed as UV irradiation time, oxygen flow rate, and chamber pressure. The statistical significance of Ultra Violet (UV) treatment was confirmed using a paired-t test. The full factorial $2^3$ design was employed to determine significant main and interaction effects in UV irradiation process. The chamber pressure and the interaction between UV irradiation time and $O_2$ flow rate were found to be statistically significant at the significance level of 0.1. Furthermore, the optimized approach was proposed in achieving the improved conductivity after UV irradiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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• pp.144-144
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• 2006

• 공업화학
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• 제23권3호
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• pp.271-278
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• 2012

본 연구에서는 마이카와 산화 아연을 이용하여 복합 재료를 제조하고, 이를 자외선 차단 크림에 응용하는 연구를 수행하였다. 먼저 마이카와 산화 아연을 각각 3-aminopropyltrimethoxysilane (APTMS)으로 처리하여 표면에 아민기를 생성시켰다. 아민기가 붙은 마이카를 1,4-phenylenediisothiocyanate (PDC)와 반응시켜 표면에 -N=C=S 작용기를 활성화시킨 후, 아민기가 붙어있는 산화 아연과 결합시켜 산화 아연으로 덮인 마이카 복합 재료를 합성하였다. 원소 분석, EDS 분석, 열 중량 분석, SEM 이미지 분석, 형광 이미지 분석, 제타 전위 측정, X-선 회절 분석, DRS UV/Vis 분석을 통하여 고체 생성물의 특성을 규명하였다. 최종적으로 표준 프로토콜로 제조된 자외선 차단 크림의 파장에 따른 투과도를 280~400 nm 범위에서 측정하여 자외선 차단 효과를 확인하였다.